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57 条记录 (耗时 0.054 秒)

    Charged beam drawing apparatus
    3.
    发明授权
    Charged beam drawing apparatus 失效
    充电光束拉制装置

    公开(公告)号：US06495841B1

    公开(公告)日：2002-12-17

    申请号：US09299145

    申请日：1999-04-26

    申请人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

    发明人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

    IPC分类号： H01J37317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/023 ,  H01J37/3174

    摘要： In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.

    摘要翻译： 在包括用于将从电子枪发射的电子束聚焦在样品表面上的物镜和用于控制电子束在样品表面上的位置的物镜偏转器的电子束描绘装置中，用于机械地移动物镜的物镜驱动机构 提供了与电子束的光轴垂直的平面中的透镜和物镜偏转器，并且与物镜和物镜偏转器相比更靠近电子枪布置的光轴移动偏转器，用于与电子束的操作同步地偏转 提供物镜和物镜偏转器。

    Pattern forming method using alignment from latent image or base pattern on substrate
    4.
    发明授权
    Pattern forming method using alignment from latent image or base pattern on substrate 失效
    图案形成方法使用在底物上的潜像或基底图案的取向

    公开(公告)号：US5989759A

    公开(公告)日：1999-11-23

    申请号：US30886

    申请日：1998-02-26

    申请人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    发明人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    IPC分类号： G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  G03F9/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70675 ,  H01J37/3045 ,  H01J37/3174 ,  Y10S430/143

    摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

    摘要翻译： 为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。 在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。 根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。 结果，粗图案和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

    Pattern forming method
    5.
    发明授权
    Pattern forming method 失效
    图案形成方法

    公开(公告)号：US06941008B2

    公开(公告)日：2005-09-06

    申请号：US10407126

    申请日：2003-04-07

    申请人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    发明人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    IPC分类号： G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  G06K9/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70675 ,  H01J37/3045 ,  H01J37/3174 ,  Y10S430/143

    摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional-displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

    摘要翻译： 为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。 在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。 根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。 结果，粗略和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

    Pattern forming method
    6.
    发明授权
    Pattern forming method 失效
    图案形成方法

    公开(公告)号：US6147355A

    公开(公告)日：2000-11-14

    申请号：US379098

    申请日：1999-08-23

    申请人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    发明人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

    IPC分类号： G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70675 ,  H01J37/3045 ,  H01J37/3174 ,  Y10S430/143

    摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

    摘要翻译： 为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。 在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。 根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。 结果，粗图案和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

    Charged particle beam exposure system using aperture mask in semiconductor manufacture
    8.
    发明授权
    Charged particle beam exposure system using aperture mask in semiconductor manufacture 失效
    在半导体制造中使用孔径掩模的带电粒子束曝光系统

    公开(公告)号：US06718532B2

    公开(公告)日：2004-04-06

    申请号：US10080081

    申请日：2002-02-22

    申请人： Ryoichi Inanami ,  Shunko Magoshi ,  Atsushi Ando

    发明人： Ryoichi Inanami ,  Shunko Magoshi ,  Atsushi Ando

    IPC分类号： G06F1750

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

    摘要： A charged particle beam exposure method for shaping a charged particle beam by using an aperture mask having character apertures corresponding to the character shapes extracted from a semiconductor device pattern, the method comprises arranging the character apertures in the aperture mask, each of the character apertures having a shape corresponding to character shapes extracted from a standard cell pattern used for designing a semiconductor device, and varying the shape of the charged particle beam according to the outer shape of each of the character apertures, thereby applying the shaped charged particle beam to the character apertures.

    摘要翻译： 一种带电粒子束曝光方法，用于通过使用具有对应于从半导体器件图案提取的字符形状的字符孔的孔径掩模来对带电粒子束进行成形，该方法包括在孔径掩模中布置字符孔，每个字符孔具有 对应于从用于设计半导体器件的标准单元图案提取的字符形状的形状，以及根据每个字符孔的外形来改变带电粒子束的形状，从而将成形带电粒子束施加到字符 孔。

    Method of evaluating shaped beam of charged beam writer and method of forming pattern
    10.
    发明授权
    Method of evaluating shaped beam of charged beam writer and method of forming pattern 失效
    充电光束写入器的成形光束的评估方法和形成图案的方法

    公开(公告)号：US5843603A

    公开(公告)日：1998-12-01

    申请号：US701614

    申请日：1996-08-22

    申请人： Atsushi Ando ,  Hitoshi Sunaoshi ,  Hirotsugu Wada ,  Kazuyoshi Sugihara

    发明人： Atsushi Ando ,  Hitoshi Sunaoshi ,  Hirotsugu Wada ,  Kazuyoshi Sugihara

    IPC分类号： G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  G03F9/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31776 ,  Y10S430/143

    摘要： A method of evaluating a shaped beam generated by a charged beam writer, comprises the steps of: a first step of shaping line beams by dividing into 1/n one side of the shaped beam having a dimension "a" in an x direction and a dimension "b" in a y direction perpendicular to the x direction, where n is the number of divisions; a second step of irradiating the shaped line beam upon a surface of the sample or the movable stage for a constant time or longer; a third step of shaping a beam by adding a bias value .delta. to each line beam width in the divided direction; a fourth step of irradiating the line beam obtained by adding the bias value to the shaped line beam upon a photosensitive substance on the sample surface for a constant time for exposure; a fifth step of repeating the fourth step exposure (n-1) times by shifting the line beam obtained by adding the bias value to the line beam, in the direction that one side of the shaped beam is divided into 1/n, and developing the photosensitive substance, to obtain a pattern width .theta.; a sixth step of repeating the above first to fifth steps by changing the number of divisions n and the bias value .delta.; and a seventh step of obtaining a change rate .DELTA..theta./.DELTA.n of the pattern width .theta. relative to the number of divisions n for each bias value .delta., to obtain an offset drift rate on the basis of the obtained change rate and the bias value. The method can evaluate a beam offset drift rate between the set beam dimension and the actual beam dimension, so that a microscopic pattern can be formed at a high precision.

    摘要翻译： 一种评估由带电光束写入器产生的成形光束的方法，包括以下步骤：通过在x方向上划分成具有尺寸“a”的成形光束的1 / n的一侧来对线束进行成形的第一步骤，以及 尺寸“b”垂直于x方向的方向，其中n是分割数; 将成形线束照射在样品或可移动台的表面上恒定时间或更长的第二步骤; 第三步骤，通过在分割方向上的每个线束宽度上增加偏置值δ来对波束进行成形; 第四步骤，通过将所述成形线束的偏置值加到所述样品表面上的感光物质上以恒定时间曝光而获得的线束; 通过将通过将偏置值添加到线束而获得的线束在成形光束的一侧被划分为1 / n的方向上，并且显影（n-1）倍重复第四步曝光（n-1）次的第五步骤 感光物质，以获得图案宽度θ; 通过改变分割数n和偏差值δ来重复上述第一至第五步骤的第六步骤; 以及第七步骤，针对每个偏差值delta获得相对于分割数n的图案宽度θ的变化率DELTAθ/ DELTA n，以基于获得的变化率和偏置值获得偏移漂移率 。 该方法可以评估设定光束尺寸和实际光束尺寸之间的光束偏移漂移率，从而可以高精度地形成微观图案。