公开(公告)号：US20090220898A1

公开(公告)日：2009-09-03

申请号：US12391679

申请日：2009-02-24

申请人： Kazuyuki MITSUOKA ,  Makoto MURAMATSU ,  Mitsuaki IWASHITA

发明人： Kazuyuki MITSUOKA ,  Makoto MURAMATSU ,  Mitsuaki IWASHITA

IPC分类号： G03F7/20 ,  B05D3/10 ,  B05D5/12

CPC分类号： H01L21/316 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122

摘要： The pattern forming method includes forming a catalyst film on a base layer having an uneven surface, wherein the catalyst layer is formed along the uneven surface of the base layer; forming a coating film by coating a fluid material on the catalyst film; forming an insoluble layer which is insoluble in a solvent in the coating film by reacting the coating film along the catalyst film; and maintaining the insoluble layer by removing an unreacted portion of the coating film by using the solvent.

摘要翻译： 图案形成方法包括在具有不平坦表面的基底层上形成催化剂膜，其中催化剂层沿着基底层的不平坦表面形成; 通过在催化剂膜上涂布流体材料形成涂膜; 通过使涂膜沿催化剂膜反应，形成不溶于涂膜的溶剂的不溶层; 并通过使用溶剂除去未涂覆的膜的未反应部分来维持不溶层。

公开(公告)号：US20110214694A1

公开(公告)日：2011-09-08

申请号：US13039361

申请日：2011-03-03

申请人： Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Hidekazu OKAMOTO ,  Hideo NAMATSU

发明人： Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Hidekazu OKAMOTO ,  Hideo NAMATSU

IPC分类号： B08B5/00 ,  B08B13/00

CPC分类号： B08B5/00 ,  B08B13/00

摘要： Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

摘要翻译： 公开了一种超临界处理装置和超临界处理方法，用于抑制图案坍塌或将构成处理液的材料注入基板。 处理室接受用超临界流体处理的基板，液体供给单元向处理室供给包含氟化合物的处理液。 液体排出单元从处理室排出超临界流体，热解成分除去单元去除促进来自处理室的液体的热分解或从液体供应单元供应的液体的热分解，加热单元加热处理 包括氟氟醚或氢氟碳的氟化合物的液体。

公开(公告)号：US20120247516A1

公开(公告)日：2012-10-04

申请号：US13369970

申请日：2012-02-09

申请人： Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Hidekazu HAYASHI ,  Yukiko KITAJIMA ,  Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII

发明人： Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Hidekazu HAYASHI ,  Yukiko KITAJIMA ,  Takayuki TOSHIMA ,  Mitsuaki IWASHITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII

IPC分类号： B08B3/00 ,  F26B25/14 ,  F26B25/06

CPC分类号： F26B3/02

摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。

公开(公告)号：US20070231459A1

公开(公告)日：2007-10-04

申请号：US11685322

申请日：2007-03-13

申请人： Kazuyuki MITSUOKA ,  Yusuke Saito ,  Naoyuki Satoh

发明人： Kazuyuki MITSUOKA ,  Yusuke Saito ,  Naoyuki Satoh

IPC分类号： C23C16/52 ,  G06F19/00

CPC分类号： H01L22/20 ,  H01J2237/304 ,  H01J2237/3156 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A change rate prediction method according to which there can be eliminated the need for experimentally determining electron beam intensities for making a change rate of a specification value of a predetermined film on a substrate uniform. The distribution of the shrinkage rate of a low-k film on a wafer upon the low-k film being modified is measured while changing the inputted current value inputted to a central electron beam tube of an electron beam irradiating mechanism, the relationship between the inputted current value and the shrinkage rate measured directly below the electron beam tube is calculated, and a dose distribution calculated through simulation is converted into a low-k film shrinkage rate distribution based on the ratio between the inputted current value and the dose and a power curve giving the relationship between the inputted current value and the measured shrinkage rate.

摘要翻译： 一种变化率预测方法，其中可以消除实验确定电子束强度的需要，以使基板上的预定膜的规格值的变化率均匀。 在改变输入到电子束照射机构的中央电子束管的输入电流值时，测量低k膜被修改时的低k膜在晶片上的收缩率的分布，输入的 计算直接在电子束管下方测量的电流值和收缩率，并且通过模拟计算的剂量分布基于输入的电流值与剂量之间的比率和功率曲线被转换为低k膜收缩率分布 给出输入的电流值和测量的收缩率之间的关系。