公开(公告)号：US20060057768A1

公开(公告)日：2006-03-16

申请号：US10538222

申请日：2003-12-09

申请人： Kazuyuki Nakanishi ,  Tadashi Oshima ,  Hideo Hasegawa ,  Hiroyuki Mori ,  Hideo Tachikawa ,  Yukio Miyachi ,  Yasushi Yamada ,  Hiroyuki Ueda ,  Masayasu Ishiko

发明人： Kazuyuki Nakanishi ,  Tadashi Oshima ,  Hideo Hasegawa ,  Hiroyuki Mori ,  Hideo Tachikawa ,  Yukio Miyachi ,  Yasushi Yamada ,  Hiroyuki Ueda ,  Masayasu Ishiko

IPC分类号： H01L21/44

CPC分类号： H01L23/3732 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor element heat dissipating member is provided which has excellent heat dissipation characteristics and adhesion characteristics and enables production of a semiconductor device at a low cost. A semiconductor device using the same, and a method of producing the same are also provided. The semiconductor element heat dissipating member has a conductive substrate and an electrically insulating amorphous carbon film containing hydrogen, and the electrically insulating amorphous carbon film is formed at least on a region of the conductive substrate on which region a semiconductor element is to be mounted.

摘要翻译： 提供了具有优异的散热特性和粘合特性的半导体元件散热构件，并且能够以低成本制造半导体器件。 还提供了使用该半导体器件的半导体器件及其制造方法。 半导体元件散热构件具有导电基板和含有氢的电绝缘非晶碳膜，并且至少在导电基板的要安装半导体元件的区域的区域上形成电绝缘非晶碳膜。

公开(公告)号：US07396735B2

公开(公告)日：2008-07-08

申请号：US10538222

申请日：2003-12-09

申请人： Kazuyuki Nakanishi ,  Tadashi Oshima ,  Hideo Hasegawa ,  Hiroyuki Mori ,  Hideo Tachikawa ,  Yukio Miyachi ,  Yasushi Yamada ,  Hiroyuki Ueda ,  Masayasu Ishiko

发明人： Kazuyuki Nakanishi ,  Tadashi Oshima ,  Hideo Hasegawa ,  Hiroyuki Mori ,  Hideo Tachikawa ,  Yukio Miyachi ,  Yasushi Yamada ,  Hiroyuki Ueda ,  Masayasu Ishiko

IPC分类号： H01L21/76

CPC分类号： H01L23/3732 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor element heat dissipating member is provided which has excellent heat dissipation characteristics and adhesion characteristics and enables production of a semiconductor device at a low cost. A semiconductor device using the same, and a method of producing the same are also provided. The semiconductor element heat dissipating member has a conductive substrate and an electrically insulating amorphous carbon film containing hydrogen, and the electrically insulating amorphous carbon film is formed at least on a region of the conductive substrate on which region a semiconductor element is to be mounted.

摘要翻译： 提供了具有优异的散热特性和粘合特性的半导体元件散热构件，并且能够以低成本制造半导体器件。 还提供了使用该半导体器件的半导体器件及其制造方法。 半导体元件散热构件具有导电基板和含有氢的电绝缘非晶碳膜，并且至少在导电基板的要安装半导体元件的区域的区域上形成电绝缘非晶碳膜。

公开(公告)号：US5352379A

公开(公告)日：1994-10-04

申请号：US894659

申请日：1992-06-05

申请人： Shinichi Nishiyama ,  Hideo Hama ,  Tooru Yamanaka ,  Yukio Miyachi

发明人： Shinichi Nishiyama ,  Hideo Hama ,  Tooru Yamanaka ,  Yukio Miyachi

IPC分类号： C09K19/20 ,  C09K19/02 ,  C09K19/22 ,  C09K19/30 ,  C09K19/32 ,  C09K19/42 ,  C09K19/46 ,  G02F1/13 ,  C09K19/12

CPC分类号： C09K19/0266 ,  C09K19/322 ,  C09K19/46 ,  C09K2019/325

摘要： The liquid crystal composition of the present invention comprises 1-99 wt. % of an antiferroelectric liquid crystal compound such as a compound represented by the following formula [A-8] and 99-1 wt. % of a cholesteric liquid crystal compound such as a compound represented by the following formula [B-2]. ##STR1## By the use of the liquid crystal composition of the invention, a liquid crystal element improved in liquid crystal properties such as contrast can be prepared.

摘要翻译： 本发明的液晶组合物包含1-99重量％ ％的反铁电液晶化合物，例如由下式[A-8]表示的化合物和99-1重量％ ％的由下式[B-2]表示的化合物的胆甾醇型液晶化合物。 通过使用本发明的液晶组合物，可以制备提高液晶性能如对比度的液晶元件。图像A [8] [B-2]

公开(公告)号：US20120261093A1

公开(公告)日：2012-10-18

申请号：US13295593

申请日：2011-11-14

申请人： Yukio Miyachi ,  Hiroshi Osada ,  Norifumi Furuta

发明人： Yukio Miyachi ,  Hiroshi Osada ,  Norifumi Furuta

IPC分类号： F28D15/02

CPC分类号： F28F13/14 ,  F28D15/0233 ,  F28F2270/00

摘要： A heat pipe comprises a housing that has a heating section that is made of metal and is contacted by a heating element, a cooling section that is made of metal and is cooled by a cooling element, and a plurality of refrigerant flow channels formed inside the housing from the heating section to the cooling section; refrigerant that is enclosed inside the plurality of refrigerant flow channels; and heat-insulating layers that are disposed between the plurality of refrigerant flow channels located at least at the heating section in the housing.

摘要翻译： 热管包括壳体，其具有由金属制成并与加热元件接触的加热部分，由金属制成并由冷却元件冷却的冷却部分，以及形成在内部的多个制冷剂流动通道 从加热部到冷却部的壳体; 封闭在多个制冷剂流路内的制冷剂; 以及绝热层，其设置在至少位于壳体内的加热部的多个制冷剂流路之间。

公开(公告)号：US06987320B2

公开(公告)日：2006-01-17

申请号：US10659289

申请日：2003-09-11

申请人： Yukio Miyachi ,  Atsuto Okamoto

发明人： Yukio Miyachi ,  Atsuto Okamoto

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/473 ,  H01L23/373 ,  H01L23/49833 ,  H01L23/49877 ,  H01L24/33 ,  H01L24/72 ,  H01L24/83 ,  H01L29/7395 ,  H01L2224/291 ,  H01L2224/32014 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19042 ,  H01L2924/3025 ,  H01L2924/01029 ,  H01L2924/00

摘要： In a pressure-welded semiconductor device where at least one semiconductor element is disposed inside a casing, a buffer conductive layer including conductive carbons is disposed at pressure-welded portions between first casing-side electrodes and element-side electrodes disposed on a first main surface and at pressure-welded portions between second casing-side electrodes and element-side electrodes disposed on a second main surface.

摘要翻译： 在其中至少一个半导体元件设置在壳体内的压焊半导体器件中，包括导电碳的缓冲导电层设置在第一壳体侧电极与设置在第一主表面上的元件侧电极之间的压焊部分 并且在第二壳体侧电极和设置在第二主表面上的元件侧电极之间的压焊部分。

公开(公告)号：US20110134608A1

公开(公告)日：2011-06-09

申请号：US13059664

申请日：2009-08-27

申请人： Kiyofumi Nakajima ,  Hiroshi Osada ,  Yukio Miyachi

发明人： Kiyofumi Nakajima ,  Hiroshi Osada ,  Yukio Miyachi

IPC分类号： H01L23/34

CPC分类号： H01L23/473 ,  H01L23/3735 ,  H01L23/467 ,  H01L25/071 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

摘要： A semiconductor apparatus 10 includes a radiator 30 on which plural semiconductor modules 20 that include semiconductor elements 21 are mounted, the semiconductor apparatus 10 characterized by the radiator 30 including a first main surface 30B and a second main surface 30C configured to be located on the opposite side of the first main surface 30B. Semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2 are arranged in the first main surface 30B and the second main surface 30C in a zigzag pattern in cross-sectional view; and the semiconductor modules 20 are mounted onto some or all of the semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2.

摘要翻译： 半导体装置10包括：散热器30，其上安装有包括半导体元件21的多个半导体模块20，半导体装置10的特征在于散热器30包括第一主表面30B和第二主表面30C，第二主表面30C被配置为位于相对的 侧的第一主表面30B。 半导体模块安装面30B1,30B2,30C1,30C2以剖视图的Z字形图案布置在第一主表面30B和第二主表面30C中; 并且半导体模块20安装在半导体模块安装表面30B1,30B2,30C1,30C2的一些或全部上。

公开(公告)号：US08503181B2

公开(公告)日：2013-08-06

申请号：US13059664

申请日：2009-08-27

申请人： Kiyofumi Nakajima ,  Hiroshi Osada ,  Yukio Miyachi

发明人： Kiyofumi Nakajima ,  Hiroshi Osada ,  Yukio Miyachi

IPC分类号： H05K7/20 ,  H01L23/48

CPC分类号： H01L23/473 ,  H01L23/3735 ,  H01L23/467 ,  H01L25/071 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

摘要： A semiconductor apparatus 10 includes a radiator 30 on which plural semiconductor modules 20 that include semiconductor elements 21 are mounted, the semiconductor apparatus 10 characterized by the radiator 30 including a first main surface 30B and a second main surface 30C configured to be located on the opposite side of the first main surface 30B. Semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2 are arranged in the first main surface 30B and the second main surface 30C in a zigzag pattern in cross-sectional view; and the semiconductor modules 20 are mounted onto some or all of the semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2.

摘要翻译： 半导体装置10包括：散热器30，其上安装有包括半导体元件21的多个半导体模块20，半导体装置10的特征在于散热器30包括第一主表面30B和第二主表面30C，第二主表面30C被配置为位于相对的 侧的第一主表面30B。 半导体模块安装面30B1,30B2,30C1,30C2以剖视图的Z字形图案布置在第一主表面30B和第二主表面30C中; 并且半导体模块20安装在半导体模块安装表面30B1,30B2,30C1,30C2的一些或全部上。

公开(公告)号：US20090226729A1

公开(公告)日：2009-09-10

申请号：US11573410

申请日：2005-08-10

申请人： Jyunji Niimoto ,  Soushi Kanameda ,  Tomohisa Sumida ,  Yukio Miyachi ,  Hideyuki Tanaka

发明人： Jyunji Niimoto ,  Soushi Kanameda ,  Tomohisa Sumida ,  Yukio Miyachi ,  Hideyuki Tanaka

IPC分类号： B32B27/38 ,  C08L63/10 ,  C09D5/12 ,  B05D1/36 ,  C09D5/16

CPC分类号： C08G59/4007 ,  C08G59/50 ,  C08G59/623 ,  C09D5/08 ,  C09D5/16 ,  C09D123/28 ,  C09D163/00 ,  Y10T428/31522 ,  C08L2666/02

摘要： A high-solids anticorrosive coating composition which comprises a main ingredient (A) comprising an epoxy resin (a1) and a hardener ingredient (B) comprising an alicyclic amine hardener (b1) and/or a Mannich type hardener (b2), the ingredient (A) and/or the ingredient (B) containing at least either of an additive (a2) selected among epoxidized reactive diluents and modified epoxy resins and a coating film modifier (ab) selected among petroleum resins, xylene resins, coumarone resins, terpene phenol resins and vinyl chloride copolymers. The high-solids anticorrosive coating composition especially of the rapidly curable type is characterized by containing a high-boiling organic solvent having a boiling point exceeding 150° C. and containing substantially no organic solvent having a boiling point of 150° C. or lower.

摘要翻译： 含有包含环氧树脂（a1）的主要成分（A）和包含脂环族胺硬化剂（b1）和/或曼尼希型固化剂（b2）的固化剂成分（B）的高固体防锈涂料组合物， （A）和/或含有选自环氧化反应性稀释剂和改性环氧树脂中的添加剂（a2）中的至少一种的成分（B）和选自石油树脂，二甲苯树脂，香豆酮树脂，萜烯中的涂膜改性剂（ab） 酚醛树脂和氯乙烯共聚物。 特别是快速固化型高固体防锈涂料组合物的特征在于含有沸点超过150℃的高沸点有机溶剂，并且基本上不含有沸点为150℃或更低的有机溶剂。