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公开(公告)号:US20090253353A1
公开(公告)日:2009-10-08
申请号:US11720964
申请日:2005-12-08
申请人: Kazuyuki Ogawa , Tetsuo Shimomura , Atsushi Kazuno , Yoshiyuki Nakai , Masahiro Watanabe , Takatoshi Yamada , Masahiko Nakamori
发明人: Kazuyuki Ogawa , Tetsuo Shimomura , Atsushi Kazuno , Yoshiyuki Nakai , Masahiro Watanabe , Takatoshi Yamada , Masahiko Nakamori
CPC分类号: B24B37/205 , Y10T428/24339 , Y10T428/24992
摘要: It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).
摘要翻译: 本发明的目的是提供一种抛光垫,其能够在抛光过程中对端点进行高精度光学检测,并且即使在抛光垫之后也可防止在使用期间抛光区域和透光区域之间的浆料泄漏 已被使用了很长时间。 本发明的第二个目的是提供一种能够抑制抛光特性(例如面内均匀性)劣化的抛光垫以及由于抛光区域和透光区域的行为差异而产生的划痕 抛光。 本发明的第三个目的是提供一种具有抛光区域和特定金属浓度等于或低于特定值(阈值)的透光区域的抛光垫。
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公开(公告)号:US20090104850A1
公开(公告)日:2009-04-23
申请号:US12065219
申请日:2006-08-22
CPC分类号: B24B37/24 , B24D3/32 , C08G18/36 , C08G2101/00 , Y10T428/24 , Y10T428/249953
摘要: An object of the present invention is to provide a polishing pad excellent in polishing rate and superior in longevity without generating center slow. Another object of the present invention is to provide a method of manufacturing a semiconductor device with the polishing pad. Disclosed is a polishing pad having a polishing layer consisting of a polyurethane foam having fine cells, wherein a high-molecular-weight polyol component that is a starting component of the polyurethane foam contains a hydrophobic high-molecular-weight polyol A having a number-average molecular weight of 550 to 800 and a hydrophobic high-molecular-weight polyol B having a number-average molecular weight of 950 to 1300 in an A/B ratio of from 10/90 to 50/50 by weight.
摘要翻译: 本发明的目的是提供一种抛光速度优异且寿命长的抛光垫,而不产生中心慢。 本发明的另一个目的是提供一种用抛光垫制造半导体器件的方法。 公开了一种抛光垫,其具有由具有细孔的聚氨酯泡沫构成的抛光层,其中作为聚氨酯泡沫的起始组分的高分子量多元醇成分含有数均分子量的疏水性高分子量多元醇A, 平均分子量为550〜800的疏水性高分子量多元醇B,A / B比为10/90〜50/50的数均分子量为950〜1300的疏水性高分子量多元醇B.
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公开(公告)号:US07871309B2
公开(公告)日:2011-01-18
申请号:US11720964
申请日:2005-12-08
申请人: Kazuyuki Ogawa , Tetsuo Shimomura , Atsushi Kazuno , Yoshiyuki Nakai , Masahiro Watanabe , Takatoshi Yamada , Masahiko Nakamori
发明人: Kazuyuki Ogawa , Tetsuo Shimomura , Atsushi Kazuno , Yoshiyuki Nakai , Masahiro Watanabe , Takatoshi Yamada , Masahiko Nakamori
CPC分类号: B24B37/205 , Y10T428/24339 , Y10T428/24992
摘要: It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).
摘要翻译: 本发明的目的是提供一种抛光垫,其能够在抛光过程中对端点进行高精度光学检测,并且即使在抛光垫之后也可防止在使用期间抛光区域和透光区域之间的浆料泄漏 已被使用了很长时间。 本发明的第二个目的是提供一种能够抑制抛光特性(例如面内均匀性)劣化的抛光垫以及由于抛光区域和透光区域的行为差异而产生的划痕 抛光。 本发明的第三个目的是提供一种具有抛光区域和特定金属浓度等于或低于特定值(阈值)的透光区域的抛光垫。
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公开(公告)号:US08309466B2
公开(公告)日:2012-11-13
申请号:US12065219
申请日:2006-08-22
IPC分类号: H01L21/302 , H01L21/461 , B32B5/00 , B32B3/26
CPC分类号: B24B37/24 , B24D3/32 , C08G18/36 , C08G2101/00 , Y10T428/24 , Y10T428/249953
摘要: A polishing pad has an excellent polishing rate and is superior in longevity without generating center slow. A method of manufacturing a semiconductor device with the polishing pad is also provided. The polishing pad has a polishing layer consisting of a polyurethane foam having fine cells, wherein a high-molecular-weight polyol component that is a starting component of the polyurethane foam contains a hydrophobic high-molecular-weight polyol A having a number-average molecular weight of 550 to 800 and a hydrophobic high-molecular-weight polyol B having a number-average molecular weight of 950 to 1300 in an A/B ratio of from 10/90 to 50/50 by weight.
摘要翻译: 抛光垫具有优异的抛光速率,寿命长,不会产生中心慢。 还提供了一种制造具有抛光垫的半导体器件的方法。 抛光垫具有由具有细小细胞的聚氨酯泡沫构成的抛光层,其中作为聚氨酯泡沫的起始成分的高分子量多元醇成分含有具有数均分子量的疏水性高分子量多元醇A 重量为550〜800的疏水性高分子量多元醇B,A / B比为10/90〜50/50的数均分子量为950〜1300的疏水性高分子量多元醇B.
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公开(公告)号:US07470170B2
公开(公告)日:2008-12-30
申请号:US10590067
申请日:2005-02-22
申请人: Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyuki Nakai , Masahiko Nakamori , Takatoshi Yamada
发明人: Tetsuo Shimomura , Atsushi Kazuno , Kazuyuki Ogawa , Yoshiyuki Nakai , Masahiko Nakamori , Takatoshi Yamada
IPC分类号: B24B1/00
摘要: The present invention provides a polishing pad which imparts excellent planarity and uniformity thereof to a material to be polished, such as a semiconductor wafer, without forming scratches. The present invention relates to a semiconductor wafer polishing pad comprising a polishing layer and a cushion layer, wherein the polishing layer is formed from foamed polyurethane, has a flexural modulus of 250 to 350 MPa, the cushion layer is formed from closed-cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm/(gf/cm2).
摘要翻译: 本发明提供了一种抛光垫,其对诸如半导体晶片的待抛光材料赋予优异的平面度和均匀性,而不会形成划痕。 本发明涉及一种包括抛光层和缓冲层的半导体晶片抛光垫,其中抛光层由发泡聚氨酯形成,其弯曲模量为250至350MPa,缓冲层由闭孔泡沫形成, 厚度为0.5〜1.0mm,应变常数为0.01〜0.08μm/(gf / cm 2)。
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公开(公告)号:US08148441B2
公开(公告)日:2012-04-03
申请号:US11794284
申请日:2006-02-27
申请人: Masato Doura , Takeshi Fukuda , Kazuyuki Ogawa , Atsushi Kazuno , Hiroshi Seyanagi , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
发明人: Masato Doura , Takeshi Fukuda , Kazuyuki Ogawa , Atsushi Kazuno , Hiroshi Seyanagi , Masahiko Nakamori , Takatoshi Yamada , Tetsuo Shimomura
IPC分类号: C08G18/10
CPC分类号: B24B37/24 , B24D3/28 , C08G18/10 , C08G2101/00 , C08G18/3237 , C08G18/3215
摘要: A method for manufacturing a polishing pad made from a polyurethane resin foam having very uniform, fine cells therein and a polishing pad obtained by that method provides a polishing pad having better polishing characteristics (especially, in planarization) while providing improved dressability while maintaining the planarization characteristics and polishing speed of a conventional polishing pad. The polyurethane resin foam is a cured product obtained by reacting an isocyanate-terminated prepolymer with an aromatic polyamine chain extender having a melting point of 70° C. or lower, for example.
摘要翻译: 制造由其中具有非常均匀的细小单元的聚氨酯树脂泡沫制成的抛光垫的方法和通过该方法获得的抛光垫提供了一种抛光垫具有更好的抛光特性(特别是平面化)的同时提供改善的可修整性,同时保持平面化 特性和抛光速度。 聚氨酯树脂发泡体是通过将异氰酸酯封端的预聚物与熔点为70℃以下的芳香族多胺扩链剂反应得到的固化物。
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公开(公告)号:US07731568B2
公开(公告)日:2010-06-08
申请号:US10598717
申请日:2004-10-20
申请人: Tetsuo Shimomura , Masahiko Nakamori , Takatoshi Yamada , Kazuyuki Ogawa , Atsushi Kazuno , Masahiro Watanabe
发明人: Tetsuo Shimomura , Masahiko Nakamori , Takatoshi Yamada , Kazuyuki Ogawa , Atsushi Kazuno , Masahiro Watanabe
CPC分类号: B24B37/205 , H01L21/30625
摘要: The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference ΔT (ΔT=T0−T1) (%) between T0 and T1 is within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein T1 is the light transmittance (%) of the light-transmitting region measured at the measurement wavelength λ after dipping for 24 hours in a KOH aqueous solution at pH 11 or an H2O2 aqueous solution at pH 4 and T0 is the light-transmittance (%) measured at the measurement wavelength λ before the dipping.
摘要翻译: 本发明的目的是提供一种抛光垫,即使在用碱性或酸性浆料进行研磨的同时,也能够在从使用开始到使用结束的长时间内保持高精度的端点光学检测 作为使用该研磨垫的半导体装置的制造方法。 本发明的抛光垫用于化学机械抛光,并具有抛光区域和透光区域,其中透光区域满足以下区别:Dgr; T(&Dgr; T = T0-T1)(%) T0和T1在400〜700nm的测量波长的整个范围内在10(%)以内,其中T1是在浸渍24小时后在测量波长λ测量的透光区域的透光率(%) pH为11的KOH水溶液或pH4的H 2 O 2水溶液,T0为在浸渍前测定的波长λ下测定的透光率(%)。
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公开(公告)号:US20090093201A1
公开(公告)日:2009-04-09
申请号:US11914547
申请日:2006-05-10
CPC分类号: B24B37/24 , B24D3/28 , B24D3/32 , C08G18/12 , C08G18/4238 , C08G18/4854 , C08G18/724 , C08G18/758 , C08G18/7621 , C08G2101/0025 , C08G2101/0066 , C08J9/30 , C08J2375/08 , C08G18/3814 , C08G18/48 , C08G18/3865
摘要: An object of the invention is to provide a polishing pad which hardly generates a scratch on a surface of a polishing object, and is excellent in planarization property. In addition, an object of the invention is to provide a polishing pad which has a high polishing rate and is excellent in planarization property. In addition, an object of the invention is to provide a polishing pad in which a groove is scarcely clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, a polishing rate is scarcely reduced.
摘要翻译: 本发明的目的是提供一种在抛光对象的表面上几乎不产生划痕的抛光垫,并且平坦化性能优异。 另外,本发明的目的在于提供一种研磨速度快,平坦化性优异的抛光垫。 另外,本发明的目的是提供一种抛光垫,其中在抛光期间槽几乎不被磨粒或抛光屑堵塞,并且即使长时间连续使用,抛光速率几乎不降低。
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公开(公告)号:US07651761B2
公开(公告)日:2010-01-26
申请号:US10494249
申请日:2002-10-03
申请人: Tetsuo Shimomura , Masahiko Nakamori , Takatoshi Yamada , Takashi Masui , Shigeru Komai , Koichi Ono , Kazuyuki Ogawa , Atsushi Kazuno , Tsuyoshi Kimura , Hiroshi Seyanagi
发明人: Tetsuo Shimomura , Masahiko Nakamori , Takatoshi Yamada , Takashi Masui , Shigeru Komai , Koichi Ono , Kazuyuki Ogawa , Atsushi Kazuno , Tsuyoshi Kimura , Hiroshi Seyanagi
CPC分类号: C08G18/00 , B24B37/24 , B24D3/30 , B24D18/00 , C08G18/10 , C08G18/12 , C08G18/4211 , C08G18/4236 , C08G18/4808 , C08G18/4854 , C08G18/61 , C08G18/664 , C08G18/6674 , C08G18/724 , C08G2101/00 , C08G2101/0066 , C08J9/0061 , C08J2205/052 , C08J2375/04 , C08J2483/00 , C08L83/00 , C09D175/08 , H01L21/30625 , Y10T428/249953 , Y10T428/249976 , C08G18/3814 , C08G18/3243 , C08G18/5096
摘要: The invention provides a polishing pad by which optical materials such as lenses, reflecting mirrors etc., or materials requiring a high degree of surface planarity, as in the polishing of silicone wafers, glass substrates or aluminum substrates for hard disks, or general metal polishing, can be flattened with stability and high polishing efficiency. The invention also provides a polishing pad for semiconductor wafers, which is superior in planarizing characteristic, is free from scratches and can be produced at low cost. There is provided a polishing pad which is free from dechucking error so that neither damage to wafers nor decrease in operating efficiency occurs. There is provided a polishing pad which is satisfactory in planarity, within wafer uniformity, and polishing rate and produces less change in polishing rate. There is provided a polishing pad which can make planarity improvement and scratch decrease compatible.
摘要翻译: 本发明提供了抛光垫,通过该抛光垫,诸如透镜,反射镜等的光学材料或需要高度表面平坦度的材料,如在硅树脂晶片,玻璃基板或用于硬盘的铝基板的抛光中,或通常的金属抛光 ,可平坦化,抛光效率高。 本发明还提供一种平面化特性优异的半导体晶片用抛光垫,无磨损,可以低成本地制造。 提供了没有脱扣误差的抛光垫,从而不会损坏晶片,也不会降低工作效率。 提供了平面性良好,晶片均匀性和抛光速度均匀且抛光速度变化小的抛光垫。 提供了可以使平面性改善和划痕减少兼容的抛光垫。
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公开(公告)号:US20050064709A1
公开(公告)日:2005-03-24
申请号:US10494249
申请日:2002-10-03
申请人: Tetsuo Shimomura , Masahiko Nakamori , Takatoshi Yamada , Takashi Masui , Shigeru Komai , Koichi Ono , Kazuyuki Ogawa , Atsushi Kazuno , Tsuyoshi Kimura , Hiroshi Seyanagi
发明人: Tetsuo Shimomura , Masahiko Nakamori , Takatoshi Yamada , Takashi Masui , Shigeru Komai , Koichi Ono , Kazuyuki Ogawa , Atsushi Kazuno , Tsuyoshi Kimura , Hiroshi Seyanagi
IPC分类号: B24B37/24 , B24D3/30 , C08G18/00 , C08G18/10 , C08G18/12 , C08G18/66 , C08G18/72 , H01L21/306 , H01L21/302 , H01L21/461
CPC分类号: C08G18/00 , B24B37/24 , B24D3/30 , B24D18/00 , C08G18/10 , C08G18/12 , C08G18/4211 , C08G18/4236 , C08G18/4808 , C08G18/4854 , C08G18/61 , C08G18/664 , C08G18/6674 , C08G18/724 , C08G2101/00 , C08G2101/0066 , C08J9/0061 , C08J2205/052 , C08J2375/04 , C08J2483/00 , C08L83/00 , C09D175/08 , H01L21/30625 , Y10T428/249953 , Y10T428/249976 , C08G18/3814 , C08G18/3243 , C08G18/5096
摘要: The invention provides a polishing pad by which optical materials such as lenses, reflecting mirrors etc., or materials requiring a high degree of surface planarity, as in the polishing of silicone wafers, glass substrates or aluminum substrates for hard disks, or general metal polishing, can be flattened with stability and high polishing efficiency. The invention also provides a polishing pad for semiconductor wafers, which is superior in planarizing characteristic, is free from scratches and can be produced at low cost. There is provided a polishing pad which is free from dechucking error so that neither damage to wafers nor decrease in operating efficiency occurs. There is provided a polishing pad which is satisfactory in planarity, within wafer uniformity, and polishing rate and produces less change in polishing rate. There is provided a polishing pad which can make planarity improvement and scratch decrease compatible.
摘要翻译: 本发明提供了抛光垫,通过该抛光垫,诸如透镜,反射镜等的光学材料或需要高度表面平坦度的材料,如在硅树脂晶片,玻璃基板或用于硬盘的铝基板的抛光中,或通常的金属抛光 ,可平坦化,抛光效率高。 本发明还提供一种平面化特性优异的半导体晶片用抛光垫,无磨损,可以低成本地制造。 提供了没有脱扣误差的抛光垫,从而不会损坏晶片,也不会降低工作效率。 提供了平面性良好,晶片均匀性和抛光速度均匀且抛光速度变化小的抛光垫。 提供了可以使平面性改善和划痕减少兼容的抛光垫。
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