公开(公告)号：US08193084B2

公开(公告)日：2012-06-05

申请号：US12591491

申请日：2009-11-20

申请人： Kazuyuki Sutou ,  Hiroaki Tomita

发明人： Kazuyuki Sutou ,  Hiroaki Tomita

IPC分类号： H01L21/60

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： When a bump electrode is formed on an opening formed in a semiconductor substrate, the invention prevents a void that is caused by gas trapped in the opening. A method of manufacturing a semiconductor device of the invention includes forming a first wiring on a main surface of a semiconductor substrate, forming an opening in the semiconductor substrate from the back surface to the main surface so as to expose the back surface of the first wiring, forming a second wiring connected to the back surface of the first wiring and extending from inside the opening onto the back surface of the semiconductor substrate, forming a solder layer connected to part of the second wiring on the bottom of the opening and extending from inside the opening onto the back surface of the semiconductor substrate, and forming a bump electrode on the opening by reflowing the solder layer.

摘要翻译： 当在形成在半导体衬底中的开口上形成凸起电极时，本发明防止了由开口中的气体引起的空隙。 一种制造本发明的半导体器件的方法包括在半导体衬底的主表面上形成第一布线，在半导体衬底中形成从背面到主表面的开口，以露出第一布线的背面 形成与所述第一布线的背面连接并从所述开口的内部延伸到所述半导体基板的背面的第二布线，形成与所述开口的底部的所述第二布线的一部分连接并从所述第二布线的内侧延伸的焊料层 开口到半导体衬底的背面，并且通过回流焊料层在开口上形成凸块电极。

公开(公告)号：US20100130000A1

公开(公告)日：2010-05-27

申请号：US12591491

申请日：2009-11-20

申请人： Kazuyuki Sutou ,  Hiroaki Tomita

发明人： Kazuyuki Sutou ,  Hiroaki Tomita

IPC分类号： H01L21/60

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： When a bump electrode is formed on an opening formed in a semiconductor substrate, the invention prevents a void that is caused by gas trapped in the opening. A method of manufacturing a semiconductor device of the invention includes forming a first wiring on a main surface of a semiconductor substrate, forming an opening in the semiconductor substrate from the back surface to the main surface so as to expose the back surface of the first wiring, forming a second wiring connected to the back surface of the first wiring and extending from inside the opening onto the back surface of the semiconductor substrate, forming a solder layer connected to part of the second wiring on the bottom of the opening and extending from inside the opening onto the back surface of the semiconductor substrate, and forming a bump electrode on the opening by reflowing the solder layer.

摘要翻译： 当在形成在半导体衬底中的开口上形成凸起电极时，本发明防止了由开口中的气体引起的空隙。 一种制造本发明的半导体器件的方法包括在半导体衬底的主表面上形成第一布线，在半导体衬底中形成从背面到主表面的开口，以露出第一布线的背面 形成与所述第一布线的背面连接并从所述开口的内部延伸到所述半导体基板的背面的第二布线，形成与所述开口的底部的所述第二布线的一部分连接并从所述第二布线的内侧延伸的焊料层 开口到半导体衬底的背面，并且通过回流焊料层在开口上形成凸块电极。

公开(公告)号：US08598720B2

公开(公告)日：2013-12-03

申请号：US12575687

申请日：2009-10-08

申请人： Hiroaki Tomita ,  Kazuyuki Sutou

发明人： Hiroaki Tomita ,  Kazuyuki Sutou

IPC分类号： H01L29/40

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/12 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/13144 ,  H01L2224/2518 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/15788 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening.

摘要翻译： 提供半导体器件及其制造方法，以增加从半导体晶片获得的半导体器件的数量，同时简化制造工艺。 在半导体衬底的顶表面上的预定区域中形成多个焊盘电极之后，通过粘合剂层将支撑体结合到半导体衬底的顶表面。 接下来，在与预定区域重叠的区域中的半导体衬底中形成开口。 在开口中形成与每个焊盘电极电连接的布线层。 之后，通过沿开口外侧的切割线切割切割包括半导体基板和支撑体的层叠结构。