公开(公告)号：US08101968B2

公开(公告)日：2012-01-24

申请号：US13016497

申请日：2011-01-28

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L33/00

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US20110133209A1

公开(公告)日：2011-06-09

申请号：US13027649

申请日：2011-02-15

申请人： Keiji ISHIBASHI ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji ISHIBASHI ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02658 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003

摘要： A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013, wherein a plane orientation of the surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure.

摘要翻译： 得到可以形成质量良好的外延生长层的GaN衬底。 作为III族氮化物衬底的GaN衬底具有表面的每平方厘米的氯原子数不大于2×1014的表面，并且每平方厘米表面的硅原子数不大于3 ×1013，其中所述表面的平面取向为（0001）面，（11-20）面，（10-12）面，（10-10）面，（20-21）面 ，（10-11）面，（11-21）面，（11-22）面和（11-24）面的纤锌矿结构。

公开(公告)号：US20100187540A1

公开(公告)日：2010-07-29

申请号：US12445681

申请日：2007-10-09

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L29/20 ,  H01L21/306 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中酸的原子数，每平方厘米表面的材料不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US08283694B2

公开(公告)日：2012-10-09

申请号：US13027649

申请日：2011-02-15

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L33/00

CPC分类号： H01L21/02658 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003

摘要： A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013, wherein a plane orientation of the surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure.

摘要翻译： 得到可以形成质量良好的外延生长层的GaN衬底。 作为III族氮化物衬底的GaN衬底具有表面的每平方厘米的氯原子数不大于2×1014的表面，并且每平方厘米表面的硅原子数不大于3 ×1013，其中所述表面的平面取向为（0001）面，（11-20）面，（10-12）面，（10-10）面，（20-21）面 ，（10-11）面，（11-21）面，（11-22）面和（11-24）面的纤锌矿结构。

公开(公告)号：US20110133207A1

公开(公告)日：2011-06-09

申请号：US13016497

申请日：2011-01-28

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L29/20

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×1013, and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×1014, and a haze level of the surface (3) is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底（1）是以下之一：III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且硅原子数 每平方厘米的表面（3）不大于3×1013; III族氮化物衬底，其中每平方厘米表面（3）的硅原子数不大于3×1013，并且表面（3）的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面（3）的酸性材料的原子数不大于2×1014，并且表面（3）的雾度水平不大于5ppm。

公开(公告)号：US07901960B2

公开(公告)日：2011-03-08

申请号：US12445681

申请日：2007-10-09

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/00

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中酸的原子数，每平方厘米表面的材料不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US07662239B2

公开(公告)日：2010-02-16

申请号：US11822903

申请日：2007-07-11

申请人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/304 ,  H01L29/30

CPC分类号： H01L21/02013 ,  B24B37/042 ,  H01L21/02027 ,  H01L21/6835 ,  H01L23/544 ,  H01L29/0657 ,  H01L2221/6834 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： Quality of one-surface planar processed group 3 nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a plurality of group 3 nitride as-grown wafers on a polishing plate with OFs or notches facing forward (f), backward (b) or inward (u) with thermoplastic wax having a thickness of 10 μm or less, grinding the as-grown wafers, lapping the ground wafers, polishing the lapped wafers into mirror wafers with a bevel of a horizontal width of 200 μm or less and a vertical depth of 100 μm or less.

摘要翻译： 单面平面处理组3氮化物晶片的质量取决于晶片在抛光板上的粘贴方向。 通过将多个第3组氮化物生长的晶片粘贴在具有面向前（f），向后（b）或向内（u）的OF或凹槽的抛光板上，获得厚度为 研磨生长的晶片，研磨研磨的晶片，将研磨的晶片抛光成具有200μm或更小的水平宽度和100μm或更小的垂直深度的斜面的镜晶片。

公开(公告)号：US20080014756A1

公开(公告)日：2008-01-17

申请号：US11822903

申请日：2007-07-11

申请人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/461

CPC分类号： H01L21/02013 ,  B24B37/042 ,  H01L21/02027 ,  H01L21/6835 ,  H01L23/544 ,  H01L29/0657 ,  H01L2221/6834 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： Quality of one-surface planar processed group 3 nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a plurality of group 3 nitride as-grown wafers on a polishing plate with OFs or notches facing forward (f), backward (b) or inward (u) with thermoplastic wax having a thickness of 10 μm or less, grinding the as-grown wafers, lapping the ground wafers, polishing the lapped wafers into mirror wafers with a bevel of a horizontal width of 200 μm or less and a vertical depth of 100 μm or less.

摘要翻译： 单面平面处理组3氮化物晶片的质量取决于晶片在抛光板上的粘贴方向。 通过将多个第3组氮化物生长的晶片粘贴在具有面向前（f），向后（b）或向内（u）的OF或凹槽的抛光板上，获得厚度为 研磨生长的晶片，研磨研磨的晶片，将研磨的晶片抛光成具有200μm或更小的水平宽度和100μm或更小的垂直深度的斜面的镜晶片。

公开(公告)号：US07851381B2

公开(公告)日：2010-12-14

申请号：US11806317

申请日：2007-05-31

申请人： Keiji Ishibashi ,  Takayuki Nishiura ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Takayuki Nishiura ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/304 ,  B24D3/02 ,  B24B57/00

CPC分类号： H01L21/02024 ,  C09G1/02 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02052 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2924/1305 ,  Y10S438/959 ,  H01L2924/00014 ,  H01L2924/00

摘要： A surface treatment method for a nitride crystal is a surface treatment method of chemically and mechanically polishing a surface of the nitride crystal. Oxide abrasive grains are used. The abrasive grains have a standard free energy of formation of at least −850 kJ/mol as a converted value per 1 mole of oxygen molecules and have a Mohs hardness of at least 4. The surface treatment method efficiently provides, for efficiently obtaining a nitride crystal substrate that can be used for a semiconductor device, the nitride crystal having the smooth and high-quality surface formed thereon.

摘要翻译： 用于氮化物晶体的表面处理方法是对氮化物晶体的表面进行化学和机械抛光的表面处理方法。 使用氧化物磨粒。 研磨颗粒具有至少为-850kJ / mol的标准自由能，作为每1摩尔氧分子的转化值，Mohs硬度至少为4。表面处理方法有效地提供了有效地获得氮化物 可用于半导体器件的晶体衬底，其上形成有平滑和高质量表面的氮化物晶体。

公开(公告)号：US20080057608A1

公开(公告)日：2008-03-06

申请号：US11892056

申请日：2007-08-20

申请人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/00

CPC分类号： C30B33/00 ,  B24B37/04 ,  C09G1/02 ,  C30B29/403 ,  H01L21/02008

摘要： A manufacturing method of a group III nitride substrate by which a group III nitride substrate being excellent in flatness can be obtained includes the steps of adhering a plurality of the stripe type group III nitride substrates to an abrading holder so that a stripe structure direction is perpendicular to a rotation direction of the abrading holder; and grinding, lapping and/or polishing the-substrates.

摘要翻译： 可以获得具有优异平坦度的III族氮化物衬底的III族氮化物衬底的制造方法包括以下步骤：将多个条状III族氮化物衬底粘合到研磨保持器上，使得条纹结构方向垂直 到研磨保持器的旋转方向; 并研磨，研磨和/或抛光基底。