公开(公告)号：US20120164833A1

公开(公告)日：2012-06-28

申请号：US13415859

申请日：2012-03-09

申请人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

IPC分类号： H01L21/304 ,  C09K13/00

CPC分类号： H01L21/02024 ,  C09G1/04

摘要： Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductors, and includes an alkali metal carbonate, an alkali metal organic salt, a chlorine-based oxidizer, and an alkali metal phosphate, wherein the sum of the concentrations of the alkali metal carbonate and the alkali metal organic salt is between 0.01 mol/L and 0.02 mol/L, inclusive. The compound semiconductor manufacturing method comprises a step of preparing a GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductor, and a step of polishing the face of the compound semiconductor utilizing an aforedescribed polishing agent.

摘要翻译： 所使用的是抛光剂，以及利用该试剂的化合物半导体制造方法和半导体器件制造方法，由此可以有利地保持化合物半导体衬底的表面质量，并且还可以维持高的抛光速率。 抛光剂是用于GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的抛光剂，包括碱金属碳酸盐，碱 金属有机盐，氯系氧化剂和碱金属磷酸盐，其中碱金属碳酸盐和碱金属有机盐的浓度之和为0.01mol / L至0.02mol / L。 化合物半导体制造方法包括制备化合物半导体的GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的步骤， 使用上述抛光剂的化合物半导体的表面。

公开(公告)号：US08841215B2

公开(公告)日：2014-09-23

申请号：US13415859

申请日：2012-03-09

申请人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

IPC分类号： H01L21/302 ,  C09G1/04 ,  H01L21/02

CPC分类号： H01L21/02024 ,  C09G1/04

摘要： Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductors, and includes an alkali metal carbonate, an alkali metal organic salt, a chlorine-based oxidizer, and an alkali metal phosphate, wherein the sum of the concentrations of the alkali metal carbonate and the alkali metal organic salt is between 0.01 mol/L and 0.02 mol/L, inclusive. The compound semiconductor manufacturing method comprises a step of preparing a GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductor, and a step of polishing the face of the compound semiconductor utilizing an aforedescribed polishing agent.

摘要翻译： 所使用的是抛光剂，以及利用该试剂的化合物半导体制造方法和半导体器件制造方法，由此可以有利地保持化合物半导体衬底的表面质量，并且还可以维持高的抛光速率。 抛光剂是用于GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的抛光剂，包括碱金属碳酸盐，碱 金属有机盐，氯系氧化剂和碱金属磷酸盐，其中碱金属碳酸盐和碱金属有机盐的浓度之和为0.01mol / L至0.02mol / L。 化合物半导体制造方法包括制备化合物半导体的GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的步骤， 使用上述抛光剂的化合物半导体的表面。

公开(公告)号：US08115927B2

公开(公告)日：2012-02-14

申请号：US12622971

申请日：2009-11-20

申请人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

发明人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

IPC分类号： G01J4/00

CPC分类号： G01N21/211

摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

摘要翻译： 1.一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光谱椭圆偏光测定的工序; 以及通过使用通过光谱椭圆偏振测量获得的光学常数的光谱，使用包含对应于化合物半导体部件的带隙的波长的波长带中的光谱来评估化合物半导体部件的表面的损伤的步骤。

公开(公告)号：US20100068834A1

公开(公告)日：2010-03-18

申请号：US12622971

申请日：2009-11-20

申请人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

发明人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

IPC分类号： H01L21/66

CPC分类号： G01N21/211

摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

摘要翻译： 1.一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光谱椭圆偏光测定的工序; 以及通过使用通过光谱椭圆偏振测量获得的光学常数的光谱，使用包含对应于化合物半导体部件的带隙的波长的波长带中的光谱来评估化合物半导体部件的表面的损伤的步骤。

公开(公告)号：US20060292728A1

公开(公告)日：2006-12-28

申请号：US11473122

申请日：2006-06-23

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B33/06 ,  H01L21/00 ,  H01L33/00

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由d 1的值表示的晶体的表面层上的均匀的畸变-d 2/2 在0.3μm的X射线穿透深度处从平面间隔d 1> 1获得的平面间隔d <2>和在X射线处的平面间隔d 2 <2> 5μm的穿透深度等于或低于2.1×10 -3 -3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US08192543B2

公开(公告)日：2012-06-05

申请号：US12216237

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B21/02

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变 并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US07854804B2

公开(公告)日：2010-12-21

申请号：US12216236

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B29/40

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1-d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变 并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US07507668B2

公开(公告)日：2009-03-24

申请号：US11527682

申请日：2006-09-27

申请人： Keiji Ishibashi ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Takayuki Nishiura

IPC分类号： H01L21/302

CPC分类号： H01L21/02024 ,  C09G1/02 ,  C09K3/1463 ,  H01L33/0095

摘要： The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a GaxIn1−xAsyP1−y crystal (0≦x≦1, 0≦y≦1), characterized in that this polishing slurry contains abrasive grains formed of SiO2, this abrasive grain is a secondary particle in which a primary particle is associated, and a ratio d2/d1 of an average particle diameter d2 of a secondary particle to an average particle diameter d1 of a primary particle is not less than 1.6 and not more than 10. According to such the polishing slurry, a crystal surface having a small surface roughness can be formed on a GaxIn1−xAsyP1−y crystal at a high polishing rate and effectively.

摘要翻译： 本抛光浆料是用于对GaxIn1-xAsyP1-y晶体（0 <= x <= 1,0 <= y <= 1）的表面进行化学机械抛光的抛光浆料，其特征在于该抛光浆料含有形成的磨料颗粒 的SiO 2，该磨粒是初级粒子相关的二次粒子，二次粒子的平均粒径d2与一次粒子的平均粒径d1的比d2 / d1为1.6以上， 不大于10.根据这种抛光浆料，可以以高抛光速率有效地在GaxIn1-xAsyP1-y晶体上形成具有小表面粗糙度的晶体表面。

公开(公告)号：US20080271667A1

公开(公告)日：2008-11-06

申请号：US12216237

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B23/00

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

公开(公告)号：US07416604B2

公开(公告)日：2008-08-26

申请号：US11473122

申请日：2006-06-23

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B25/12

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.