公开(公告)号：US06271055B1

公开(公告)日：2001-08-07

申请号：US09038708

申请日：1998-03-09

申请人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

发明人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

IPC分类号： H01L2100

CPC分类号： H01L31/202 ,  H01L31/1055 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor while decreasing the film forming rate thereof and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor. Further, a process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor while increasing the film forming rate thereof. Thereby, a photoelectric conversion element having a high photoelectric conversion efficiency can be obtained with a high productivity.

公开(公告)号：US06162988A

公开(公告)日：2000-12-19

申请号：US923259

申请日：1997-09-04

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/511 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

公开(公告)号：US20050161077A1

公开(公告)日：2005-07-28

申请号：US10625041

申请日：2003-07-23

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/511 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： An apparatus for efficiently and continuously mass-producing a photovoltaic element by a plasma CVD method having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. The apparatus has a first chamber where raw material gas flows from top to bottom. A second chamber is connected to the first chamber by a separating path and causes the raw material gas to flow from bottom to top along the movement direction of the long substrate.

摘要翻译： 一种用于通过等离子体CVD法有效且连续地大量生产光电元件的装置，其具有优异的电流 - 电压特性和优异的光电转换效率。 该装置具有第一室，其中原料气体从上到下流动。 第二室通过分离路径连接到第一室，并且使原料气体沿着长基板的移动方向从底部向上流动。

公开(公告)号：US06368944B1

公开(公告)日：2002-04-09

申请号：US09664219

申请日：2000-09-18

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

公开(公告)号：US06313430B1

公开(公告)日：2001-11-06

申请号：US09258208

申请日：1999-02-26

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

IPC分类号： B23K906

CPC分类号： B23K1/206 ,  B23K2101/40

摘要： A high frequency plasma processing apparatus and a high frequency plasma processing method according to the invention can suitably be used for uniformly forming on a substrate a deposition film over a large area. The apparatus and the related method solve the problem wherein high frequency power supplied to a known plasma processing apparatus can become distorted to produce harmonics and give rise to difficulty in correctly reading the incident and reflected powers and realizing an accurate matching when a VHF is used in order to raise the processing rate.

摘要翻译： 根据本发明的高频等离子体处理装置和高频等离子体处理方法可以适用于在大面积上在基板上均匀地形成沉积膜。 该装置和相关方法解决了提供给已知等离子体处理装置的高频功率可能变得失真以产生谐波并导致难以正确读取入射和反射功率并且当使用VHF时实现精确匹配的问题 以提高加工率。

公开(公告)号：US6159763A

公开(公告)日：2000-12-12

申请号：US927413

申请日：1997-09-10

申请人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： C23C16/509 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/076 ,  C23C16/5096 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： There is provided a method of forming a photovoltaic element, in which a p-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure, in which in a plasma discharge space, the surface area of a cathod electrode in a plasma discharge space is larger than the sum of surface areas of a belt-like member and an anode electrode, a potential of said cathod electrode at the time of excitation of glow discharge is positive relative to the belt-like member and the anode electrode, and a separator electrode partially constituting the cathod electrode is configured to have a form of a fin or a block, and an n-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure of a capacitive-coupling, parallel-plate type. Thereby, a photovoltaic element having a high quality and superior uniformity over a large area, less defects, superior photo deterioration property and improved series resistance can be manufactured providing a high throughput in large quantities with good reproducibility.

摘要翻译： 提供一种形成光电元件的方法，其中在用于形成具有阴极电极结构的半导体薄膜的器件中形成p型半导体层，其中在等离子体放电空间中，阴极的表面积 等离子体放电空间中的电极大于带状部件和阳极电极的表面积的总和，所述阴极电极在辉光放电的激发时的电位相对于带状部件是正的， 阳极电极和部分地构成阴极电极的隔离电极构成为具有翅片或块的形式，并且在用于形成具有阴极电极结构的半导体薄膜的器件中形成n型半导体层 电容耦合，平行板型。 由此，可以制造出具有高质量且均匀性大的光电元件，较少的缺陷，优异的光劣化性能和改善的串联电阻，从而提供大量的高生产率和良好的再现性。

公开(公告)号：US06472296B2

公开(公告)日：2002-10-29

申请号：US09912343

申请日：2001-07-26

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/545 ,  Y02P70/521

摘要： A process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.

摘要翻译： 一种制造半导体层的方法，该方法是通过将原料气体引入放电室并向室内供给高频电力，以通过放电来分解原料气体，由此在放电室内的基板上形成半导体层，该方法包括 提供至少非常高频（VHF）的高频功率作为高频功率的步骤; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内 放电室内壁面积。 高质量的半导体层可以在大面积上高速沉积。

公开(公告)号：US06495392B2

公开(公告)日：2002-12-17

申请号：US09911172

申请日：2001-07-23

申请人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2100

CPC分类号： H01L31/075 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a semiconductor device such as a photovoltaic element including a solar cell or a photosensor having a photoelectric conversion semiconductor layer formed by sequentially forming a p-type or n-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, an i-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, and an n-type or p-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material on a substrate by means of plasma CVD, characterized in that at least one i-type semiconductor as said i-type semiconductor layer is formed in a discharge chamber having a cathode electrode by means of VHF plasma CVD using a silicon-containing raw material gas, wherein a VHF power of a wattage which is two times or less that of a VHF power required for decomposing 100% of said silicon-containing raw material gas is applied to said cathode electrode.

摘要翻译： 一种用于制造半导体器件的方法，诸如包括太阳能电池的光电元件或具有光电转换半导体层的光电传感器的光电元件，其顺序地形成由非单晶硅系列半导体材料构成的p型或n型半导体层 由非单晶硅系列半导体材料构成的i型半导体层和由等离子体CVD在基板上的非单晶硅系半导体材料构成的n型或p型半导体层， 其特征在于，通过使用含硅原料气体的VHF等离子体CVD，在具有阴极的放电室中形成至少一个作为所述i型半导体层的i型半导体，其中，功率的VHF功率 是分解100％的所述含硅原料气体所需的VHF功率的两倍或更少被施加到所述阴极。

公开(公告)号：US06287943B1

公开(公告)日：2001-09-11

申请号：US09363825

申请日：1999-07-30

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/545 ,  Y02P70/521

摘要： The invention provides a process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.

摘要翻译： 本发明提供一种通过将原料气体引入放电室并向室内供给高频电力以通过放电分解原料气体从而在放电室内的基板上形成半导体层来制造半导体层的方法， 过程包括以下步骤：提供至少非常高频（VHF）的高频功率作为高频功率; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内 放电室内壁面积。 高质量的半导体层可以在大面积上高速沉积。

公开(公告)号：US20090084500A1

公开(公告)日：2009-04-02

申请号：US12326238

申请日：2008-12-02

申请人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C14/34

CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

摘要翻译： 公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置， 由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。 这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。