公开(公告)号：US06271055B1

公开(公告)日：2001-08-07

申请号：US09038708

申请日：1998-03-09

申请人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

发明人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

IPC分类号： H01L2100

CPC分类号： H01L31/202 ,  H01L31/1055 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor while decreasing the film forming rate thereof and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor. Further, a process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor while increasing the film forming rate thereof. Thereby, a photoelectric conversion element having a high photoelectric conversion efficiency can be obtained with a high productivity.

公开(公告)号：US06482668B2

公开(公告)日：2002-11-19

申请号：US09260044

申请日：1999-03-02

申请人： Naoto Okada ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori

发明人： Naoto Okada ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori

IPC分类号： H01L2100

CPC分类号： H01L31/1824 ,  H01L31/1816 ,  Y02E10/545 ,  Y02P70/521

摘要： In the step of forming a microcrystalline i-type semiconductor layer by high-frequency plasma CVD, wherein an area of the parallel-plate electrode is represented by S; a width of the discharge space in its direction perpendicular to the transport direction of the belt-like substrate, by Ws; a width of a region formed by the parallel-plate electrode together with its surrounding insulating region, in its direction perpendicular to the transport direction of the belt-like substrate, by Wc; a width of the belt-like substrate in the direction perpendicular to its transport, by Wk; a distance between the parallel-plate electrode and the belt-like substrate, by h; a power density at which crystal fraction begins to saturate at predetermined substrate temperature, material gas flow rate and pressure, by Pd; and a high-frequency power, by P, 2h/(Ws−Wc)≧2.5, (Ws/h)×2(Ws−Wk)/[4h+(Ws−Wc) ]≧10, and P≧(10/8)×Pd×S. A microcrystalline semiconductor layer having lower characteristics distribution in the width direction of a belt-like substrate result, and photovoltaic devices having uniform photoelectric conversion efficiency can be mass-produced by a roll-to-roll system.

摘要翻译： 在通过高频等离子体CVD形成微晶i型半导体层的步骤中，平行板电极的面积由S表示; 放电空间在与带状衬底的输送方向垂直的方向上的宽度Ws; 由平行板电极与其周围的绝缘区域在垂直于带状衬底的输送方向的方向上形成的区域的宽度为Wc; 带状基板在与其运输方向垂直的方向上的宽度W k; 平行板电极和带状衬底之间的距离h; 通过Pd在晶体部分在预定的衬底温度，材料气体流速和压力下开始饱和的功率密度; 和高频功率，通过P，在带状衬底的宽度方向上具有较低特性分布的微晶半导体层，并且可以通过卷对卷大规模生产具有均匀光电转换效率的光电器件 系统。

公开(公告)号：US06153823A

公开(公告)日：2000-11-28

申请号：US37825

申请日：1998-03-11

申请人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

发明人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/048 ,  H01L31/076 ,  H01L31/20 ,  H02J7/35 ,  H01L25/00

CPC分类号： H02J7/35 ,  B32B17/04 ,  B32B17/10788 ,  H01L31/048 ,  H01L31/076 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/548 ,  Y10S136/293

摘要： A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

摘要翻译： 提供一种光电转换元件，其包括基板，形成在基板上的非单晶半导体的多个半导体结以及覆盖半导体结的表面材料。 半导体结具有彼此不同的各自的吸收光谱，并且各自的光劣化率彼此不同。 当没有表面材料存在时，由劣化率最小的半导体结产生的光电流大于具有最大劣化率的半导体结的光电流，并且当存在时，表面材料在相当于一部分的范围内吸收光 具有最小劣化率的半导体结的吸收光谱，使得由劣化率最小的半导体结产生的光电流变得小于具有最大劣化率的半导体结的光电流。

公开(公告)号：US06602347B1

公开(公告)日：2003-08-05

申请号：US09439609

申请日：1999-11-12

申请人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

发明人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  G21K5/10 ,  H01L31/03921 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A substrate-processing apparatus includes a substrate delivery chamber, a substrate-processing chamber and a substrate takeup chamber, wherein in the substrate delivery chamber, a web substrate and an interleaf are delivered from a delivery bobbin including the web substrate and the interleaf alternately wound while the web substrate delivered is transported into the substrate-processing chamber to process the web substrate therein and the interleaf delivered is wound on an interleaf takeup bobbin. In the substrate takeup chamber, the web substrate transported from the substrate-processing chamber and an interleaf delivered from an interleaf delivery bobbin are alternately wound in a roll form on a substrate takeup bobbin. The substrate-processing apparatus is provided with a mechanism for detecting transport abnormality of the interleaf either in the substrate delivery chamber or in the substrate takeup chamber.

摘要翻译： 基板处理装置包括基板输送室，基板处理室和基板卷取室，其中，在基板输送室中，从基板和交错卷绕的输送线轴输送卷筒纸基板和夹板 而输送的网状基材被输送到基材处理室中以在其中处理网状物基材，并且输送的中间层被卷绕在中间卷取线轴上。 在基板卷取室中，从基板处理室输送的网状基板和从中间输送线轴输送的夹层交替地卷绕在基板卷绕筒管上。 衬底处理装置设置有用于检测衬底输送室或衬底收容室中的插入物的运输异常的机构。

公开(公告)号：US06576061B1

公开(公告)日：2003-06-10

申请号：US09469797

申请日：1999-12-22

申请人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： H01L21/67173 ,  H01L21/67236 ,  H01L21/67253 ,  H01L21/6776

摘要： A substrate-processing method comprising transporting a substrate to pass through a plurality of processing spaces communicated with each other while processing said substrate in each processing space, characterized in that based on an inner pressure of (a) one of said plurality of processing spaces, said inner pressure of said processing space (a) and an inner pressure of (b) at least one of the processing spaces arranged before or after said processing space (a) are controlled. A substrate-processing apparatus comprising a plurality of processing spaces, a substrate transportation means for transporting a substrate to pass through said plurality of processing spaces while said substrate being processed in each processing space, and a pressure gage of measuring an inner pressure of (a) one of said plurality of processing spaces, characterized in that said substrate-processing apparatus has a control unit for controlling the inner pressure of said processing space (a) and that of (b) at least one of the processing spaces arranged before or after said processing space (a) based on information obtained from said pressure gage.

摘要翻译： 一种基板处理方法，包括在每个处理空间中处理所述基板的同时传送基板以通过彼此连通的多个处理空间，其特征在于，基于所述多个处理空间中的一个的内部压力， 所述处理空间（a）的所述内部压力和所述处理空间（a）之前或之后布置的处理空间中的至少一个处理空间（b）的内部压力被控制。1。一种基板处理设备，包括多个处理空间， 基板传送装置，用于在每个处理空间中处理所述基板的同时传送基板以通过所述多个处理空间;以及压力计，测量所述多个处理空间中的一个处理空间中的（a）的内部压力，其特征在于， 所述基板处理装置具有用于控制所述处理空间（a）和（b）的内部压力的控制单元 基于从所述压力计获得的信息，在所述处理空间（a）之前或之后布置的处理空间中的至少一个。

公开(公告)号：US06350489B1

公开(公告)日：2002-02-26

申请号：US08768609

申请日：1996-12-18

申请人： Koichiro Moriyama ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Atsushi Yasuno ,  Kohei Yoshida ,  Yusuke Miyamoto

发明人： Koichiro Moriyama ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Atsushi Yasuno ,  Kohei Yoshida ,  Yusuke Miyamoto

IPC分类号： C23C1654

CPC分类号： C23C16/545

摘要： To provide a deposited-film forming process and a deposited-film forming apparatus that may cause no scratches on the film forming surface to improve yield and enable stable discharge to thereby continuously form deposited films having uniform quality and uniform thickness, deposited films are formed by lengthwise continuously transporting a belt-like substrate so as to form a part of a discharge space, wherein the substrate is transported while bringing the transverse sectional shape of the substrate which forms a part of the discharge space into a curved shape by a roller.

摘要翻译： 为了提供沉积膜形成工艺和沉积膜形成装置，其可以在膜形成表面上不产生划痕以提高产量并且能够稳定地放电，从而连续地形成具有均匀质量和均匀厚度的沉积膜，沉积膜通过 纵向连续输送带状基板以形成放电空间的一部分，其中基板被输送，同时通过辊将构成放电空间的一部分的基板的横截面形状带入弯曲形状。

公开(公告)号：US6113732A

公开(公告)日：2000-09-05

申请号：US814081

申请日：1997-03-10

申请人： Kohei Yoshida ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Masatoshi Tanaka

发明人： Kohei Yoshida ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Masatoshi Tanaka

IPC分类号： G03G5/08 ,  C23C16/44 ,  C23C16/48 ,  C23C16/50 ,  C23C16/511 ,  C23C16/54 ,  H01L21/00 ,  H01L21/205 ,  C23F1/02

CPC分类号： H01L21/67109 ,  C23C16/4412 ,  C23C16/481 ,  C23C16/545

摘要： A deposit film forming apparatus is characterized in that a temperature control member for controlling the temperature of a wall of deposition chamber is in contact with an outer wall of a deposition chamber through a heat conductivity adjusting plate, which can prevent overcooling while suppressing an increase in the temperature of the wall of deposition chamber during film formation and which can maintain the temperature of the wall of deposition chamber at a preferable temperature for deposition of film for a long time, thereby forming a deposit film. As a result, the apparatus can mass-produce deposit films of stable quality, especially, large-area and good-quality photovoltaic elements utilizing amorphous semiconductors, over a long period.

摘要翻译： 沉积膜形成装置的特征在于，用于控制沉积室壁的温度的温度控制构件通过导热性调节板与沉积室的外壁接触，其可以防止过度冷却，同时抑制 在成膜期间沉积室壁的温度，并且可以将沉积室的温度保持在用于长时间沉积膜的优选温度，从而形成沉积膜。 因此，该设备可以长时间大量生产质量稳定的沉积膜，特别是利用非晶半导体的大面积和优质光伏元件。

公开(公告)号：US06833155B2

公开(公告)日：2004-12-21

申请号：US10425652

申请日：2003-04-30

申请人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

发明人： Hiroshi Shimoda ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Koichiro Moriyama

IPC分类号： H05H100

CPC分类号： C23C16/545 ,  G21K5/10 ,  H01L31/03921 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A substrate-processing method includes at least (a) a step of delivering a web substrate and an interleaf from a substrate delivery bobbin provided in a substrate delivery chamber while the web substrate is transported into a substrate-processing chamber and the interleaf delivered is wound on an interleaf takeup bobbin, and (b) a step of subjecting the web substrate transported into the substrate-processing chamber to desired processing in the substrate-processing chamber. The web substrate processed in the substrate-processing chamber is transported outside the substrate-processing chamber, and transport abnormality of the interleaf in the substrate delivery chamber is detected by a transport abnormality-detecting mechanism.

摘要翻译： 基板处理方法至少包括以下步骤：将幅材基板输送到基板处理室中并且所传送的中间片被卷绕时，从设置在基板输送室中的基板输送线轴输送纸幅基板和插页的步骤 并且（b）使运送到基板处理室中的卷筒纸基板在基板处理室中进行所希望的处理的步骤。 在基板处理室中处理的网状基板被输送到基板处理室外部，并且通过运输异常检测机构来检测基板输送室内的交错异常。

公开(公告)号：US06261862B1

公开(公告)日：2001-07-17

申请号：US09358930

申请日：1999-07-23

申请人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A process is provided for producing a photovoltaic element which has at least one pin junction, and a buffering semiconductor layer constituted of plural sublayers between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, through production steps of introducing a source material gas into an electric discharge space in a reaction chamber, and decomposing the source material gas by plasma discharge to form a non-monocrystalline semiconductor layer. In the process, in electric discharge generation for formation of at least one of the sublayers, the polarity of the electrode confronting the substrate for formation of a first sublayer and the polarity of the electrode confronting the substrate for formation of a second sublayer adjacent to the first sublayer is made different from each other, or the potential of one of the electrodes is set at zero volt. Thereby, diffusion of the dopant from the p-type layer or the n-type layer into the i-type layer is prevented effectively. The produced photovoltaic element is improved in the output properties, the open-circuit voltage, and the fill factor, and these properties deteriorate less.

摘要翻译： 提供了一种制造具有至少一个pin结的光电元件的工艺，以及在n型层和i型层之间和/或i型层与p型之间由多个子层构成的缓冲半导体层 型层，通过将源材料气体引入反应室中的放电空间的生产步骤，以及通过等离子体放电来分解原料气体以形成非单晶半导体层。 在该过程中，在用于形成至少一个子层的放电产生中，与用于形成第一子层的衬底相对的电极的极性和与衬底相对的用于形成邻近第二子层的第二子层的电极的极性 使第一子层彼此不同，或者将一个电极的电位设置为零伏。 由此，有效地防止了掺杂剂从p型层或n型层向i型层的扩散。 所产生的光电元件的输出性能，开路电压和填充因子得到改善，并且这些特性劣化较少。

公开(公告)号：US5232507A

公开(公告)日：1993-08-03

申请号：US876472

申请日：1992-04-30

申请人： Hirokazu Ohtoshi ,  Tetsuya Takei ,  Ryuji Okamura ,  Yasuyoshi Takai

发明人： Hirokazu Ohtoshi ,  Tetsuya Takei ,  Ryuji Okamura ,  Yasuyoshi Takai

IPC分类号： C08J7/00 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32743 ,  H01J2237/3321

摘要： An apparatus for forming deposited films with a microwave plasma CVD method comprises a reactor vessel within which the pressure can be reduced, means for supplying a source gas into the reactor vessel, means for introducing the microwave into the reactor vessel and exciting a microwave discharge plasma, and means for holding a plurality of substrates so as to enclose a discharge space formed within the reactor vessel, and is characterized by comprising a holding member holding together dielectric windows for introducing the microwave into the reactor vessel, substrates for the formation of deposited films disposed so as to surround the dielectric windows and a cooling device for cooling the dielectric windows, and conveying means for conveying the holding member into and out of the reactor vessel in a vacuum atmosphere.

摘要翻译： 用微波等离子体CVD方法形成沉积膜的装置包括一个反应器容器，在该反应容器中压力可以减小，用于将源气体供应到反应器容器中的装置，用于将微波引入反应器容器并激发微波放电等离子体的装置 ，以及用于保持多个基板以包围形成在反应容器内的放电空间的装置，其特征在于包括：保持构件，其保持用于将微波引入反应器容器的电介质窗口，用于形成沉积膜的基板 设置成围绕电介质窗口和用于冷却电介质窗口的冷却装置，以及用于在真空环境中将保持构件输入和流出反应容器的输送装置。