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    Method of Growing AlN Crystals, and AlN Laminate
    7.
    发明申请
    Method of Growing AlN Crystals, and AlN Laminate 审中-公开
    生长AlN晶体和AlN层压板的方法

    公开(公告)号：US20110042684A1

    公开(公告)日：2011-02-24

    申请号：US12988324

    申请日：2009-04-14

    申请人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Issei Satoh ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    发明人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Issei Satoh ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC分类号： H01L29/20 ,  C30B23/00

    CPC分类号： C30B23/002 ,  C30B23/025 ,  C30B29/403

    摘要： Affords an AlN crystal growth method, and an AlN laminate, wherein AlN of favorable crystalline quality is grown. The AlN crystal growth method is provided with the following steps. To begin with, a source material (17) containing AlN is prepared. A heterosubstrate (11), having a major surface (11a), is prepared. The source material (17) is sublimed to grow AlN crystal so as to cover the major surface (11a) of the heterosubstrate (11), whereby a first layer (12) with a flat face (12a) is formed. The source material (17) is sublimed to form onto the face (12a) of the first layer (12) a second layer (13) made of AlN. The second layer (13) is formed at a higher temperature than is the first layer (12).

    摘要翻译： 提供AlN晶体生长方法和AlN层压体，其中生长有利的结晶质量的AlN。 AlN晶体生长方法具有以下步骤。 首先，准备含有AlN的原料（17）。 准备具有主表面（11a）的异基底（11）。 源材料（17）升华以生长AlN晶体以覆盖杂质衬底（11）的主表面（11a），由此形成具有平坦面（12a）的第一层（12）。 源材料（17）升华以形成第一层（12）的由AlN制成的第二层（13）的表面（12a）上。 第二层（13）形成在比第一层（12）更高的温度。

    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal
    8.
    发明申请
    Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal 有权
    生产氮化铝晶体的方法，生产氮化铝晶体的方法和氮化铝晶体

    公开(公告)号：US20100143748A1

    公开(公告)日：2010-06-10

    申请号：US12595957

    申请日：2008-12-19

    申请人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    发明人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC分类号： B32B9/04 ,  C30B23/06

    CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658

    摘要： Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

    摘要翻译： 生产和制造氮化铝晶体的方法和通过这些方法生产的氮化铝晶体。 防止起始衬底的升华允许以提高的生长速率生长具有优异结晶度的氮化铝晶体。 氮化铝晶体生长方法包括以下步骤。 首先，制备层状基板，配备有具有主表面和背面的起始衬底，在背面形成的第一层和形成在第一层上的第二层。 然后通过气相沉积将氮化铝晶体生长到起始衬底的主表面上。 第一层由在生长氮化铝晶体的温度下比起始衬底更不易升华的物质制成。 第二层由导热率高于第一层的物质制成。

    Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal
    9.
    发明授权
    Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal 有权
    生产氮化铝晶体的方法，用于生产氮化铝晶体的方法和氮化铝晶体

    公开(公告)号：US08323402B2

    公开(公告)日：2012-12-04

    申请号：US12595957

    申请日：2008-12-19

    申请人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    发明人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC分类号： C30B1/10

    CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658

    摘要： Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

    摘要翻译： 生产和制造氮化铝晶体的方法和通过这些方法生产的氮化铝晶体。 防止起始衬底的升华允许以提高的生长速率生长具有优异结晶度的氮化铝晶体。 氮化铝晶体生长方法包括以下步骤。 首先，制备层状基板，配备有具有主表面和背面的起始衬底，在背面形成的第一层和形成在第一层上的第二层。 然后通过气相沉积将氮化铝晶体生长到起始衬底的主表面上。 第一层由在生长氮化铝晶体的温度下比起始衬底更不易升华的物质制成。 第二层由导热率高于第一层的物质制成。

    METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
    10.
    发明申请
    METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE 有权
    制备氮化物基质和氮化物基质的方法

    公开(公告)号：US20110156213A1

    公开(公告)日：2011-06-30

    申请号：US13061307

    申请日：2009-08-26

    申请人： Satoshi Arakawa ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    发明人： Satoshi Arakawa ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L21/02021 ,  C30B25/00 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02013 ,  H01L21/02389

    摘要： A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.

    摘要翻译： 制造氮化物衬底的方法包括以下步骤。 首先，生长氮化物晶体。 然后，从氮化物晶体切割包括前表面的氮化物衬底。 在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。 当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过 通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。