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公开(公告)号：US5504767A
公开(公告)日：1996-04-02
申请号：US406306
申请日：1995-03-17
IPC分类号： H01S3/16
摘要： A solid state laser is provided having as the laser medium diamond and an optically active dopant element which is found to lase in the solid matrix. The dopant is preferably titanium, vanadium, chromium, iron, cobalt, nickel, zinc, zirconium, niobium, cadmium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, mercury, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and uranium. Erbium is especially preferred. The laser medium is formed as dopants are added by ion implantation to a diamond crystal as the diamond is grown by chemical vapor deposition.
摘要翻译： 提供固体激光器，其具有作为激光介质金刚石和发现在固体基质中的光学活性掺杂元素。 掺杂剂优选为钛，钒，铬，铁，钴，镍，锌，锆，铌，镉，铪，钽，钨，铼，锇，铱，铂，金，汞，铈，镨，钕，ium， 钐，铕，钆，铽，镝，钬，铒，ium，镱和铀。 铒是特别优选的。 形成激光介质，因为当金刚石通过化学气相沉积生长时，通过离子注入将掺杂剂添加到金刚石晶体。
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公开(公告)号：US20120002347A1
公开(公告)日：2012-01-05
申请号：US12829718
申请日：2010-07-02
CPC分类号： H01G4/32 , H01G4/012 , H01G4/06 , Y10T29/417 , Y10T29/43 , Y10T29/435
摘要： A method for forming a plurality of strips to be used for formulating high-breakdown strength and high-temperature capacitors is disclosed. The method includes forming a metalized substrate having a particular pattern, masking a portion of the metalized substrate, coating the metalized substrate with a dielectric material and removing the masking material and thus the dielectric layer from a portion of the metalized layer to form a contact surface. In lieu of placing a masking material on the metalized substrate, the exposed contact area can be formed by shielding a portion of the metalized substrate while depositing the dielectric layer.
摘要翻译： 公开了一种用于形成用于配制高击穿强度和高温电容器的多个条带的方法。 该方法包括形成具有特定图案的金属化衬底，掩蔽金属化衬底的一部分，用电介质材料涂覆金属化衬底，并且从金属化层的一部分去除掩模材料并因此去除电介质层以形成接触表面 。 代替在金属化基板上放置掩模材料，可以通过在沉积介电层的同时屏蔽金属化衬底的一部分来形成暴露的接触区域。
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公开(公告)号：US06329745B2
公开(公告)日：2001-12-11
申请号：US09771861
申请日：2001-01-29
IPC分类号： H01J102
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30446
摘要： An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.
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公开(公告)号：US6015459A
公开(公告)日：2000-01-18
申请号：US105420
申请日：1998-06-26
申请人： Keith D. Jamison , Mike L. Kempel
发明人： Keith D. Jamison , Mike L. Kempel
CPC分类号： C30B25/16 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/36
摘要： Method is provided for controlling the concentration of a dopant introduced into an epitaxial film during CVD or sublimation growth by controlling the energy of dopant atoms impinging on the film in a supersonic beam. Precursor materials may also be introduced by supersonic beam. Energy of the dopant atoms may be changed by changing flow conditions in the supersonic beam or changing carrier gases. Flow may be continuous or pulsed. Examples of silicon carbide doping are provided.
摘要翻译： 提供了用于通过控制在超声波束中撞击在膜上的掺杂剂原子的能量来控制在CVD或升华生长期间引入到外延膜中的掺杂剂的浓度的方法。 前体材料也可以通过超声波束引入。 掺杂剂原子的能量可以通过改变超声波束或改变载气中的流动条件来改变。 流动可以是连续的或脉冲的。 提供碳化硅掺杂的实例。
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公开(公告)号：US08256078B2
公开(公告)日：2012-09-04
申请号：US12829718
申请日：2010-07-02
IPC分类号： H01G7/00
CPC分类号： H01G4/32 , H01G4/012 , H01G4/06 , Y10T29/417 , Y10T29/43 , Y10T29/435
摘要： A method for forming a plurality of strips to be used for formulating high-breakdown strength and high-temperature capacitors is disclosed. The method includes forming a metalized substrate having a particular pattern, masking a portion of the metalized substrate, coating the metalized substrate with a dielectric material and removing the masking material and thus the dielectric layer from a portion of the metalized layer to form a contact surface. In lieu of placing a masking material on the metalized substrate, the exposed contact area can be formed by shielding a portion of the metalized substrate while depositing the dielectric layer.
摘要翻译： 公开了一种用于形成用于配制高击穿强度和高温电容器的多个条带的方法。 该方法包括形成具有特定图案的金属化衬底，掩蔽金属化衬底的一部分，用电介质材料涂覆金属化衬底，并且从金属化层的一部分去除掩模材料并因此去除电介质层以形成接触表面 。 代替在金属化基板上放置掩模材料，可以通过在沉积介电层的同时屏蔽金属化衬底的一部分来形成暴露的接触区域。
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公开(公告)号：US07460352B2
公开(公告)日：2008-12-02
申请号：US11328323
申请日：2006-01-09
CPC分类号： H01G4/32 , H01G4/012 , H01G9/045 , H01G9/151 , Y10T29/43 , Y10T29/435 , Y10T428/31
摘要： Flexible films or sheets for forming high-breakdown strength, high-temperature capacitors are disclosed. Amorphous metal oxides and nitrides, preferably SiO2 or HfO2, with a dielectric constant (k) greater than 2 and stacks of oxides and nitrides formed over conducting substrates may be formed. The dielectrics may be formed by reactive sputter deposition of the amorphous materials onto cooled substrates. The cooled substrate allows the films to be amorphous or nanocrystalline and results in films that can be flexed and that can be rolled into cylindrical shapes. An important application for these dielectrics is in high energy-density wound capacitors.
摘要翻译： 公开了用于形成高击穿强度的高温电容器的柔性膜或片。 可以形成介电常数（k）大于2的无定形金属氧化物和氮化物，优选SiO 2或HfO 2，并且可以形成在导电衬底上形成的氧化物和氮化物堆叠。 电介质可以通过将非晶材料反应溅射沉积到冷却的衬底上而形成。 冷却的衬底允许膜是无定形或纳米晶体，并且导致可以弯曲的膜并且可以卷成圆柱形。 这些电介质的重要应用是在高能量密度卷绕电容器中。
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7.发明授权Segmented gate drive for dynamic beam shape correction in field emission cathodes 有权用于场发射阴极动态光束形状校正的分段栅极驱动公开(公告)号：US06429596B1
公开(公告)日：2002-08-06
申请号：US09476051
申请日：1999-12-31
IPC分类号： H01J724
CPC分类号： H01J29/481 , H01J3/022
摘要： A field emission cathode providing for dynamic adjustment of beam shape is disclosed. Beam shape adjustment is accomplished by segmenting the gate electrode of a gated field emission cathode and independently driving the various gate segments to form the desired beam shape. Segments can be turned on and off as the beam is deflected allowing dynamic correction of aberrations in the beam. A focus lens can be placed on the gated cathode to produce a parallel electron beam. In addition, a hollow cathode can be produced to minimize space charge repulsion in a beam.
摘要翻译： 公开了一种用于光束形状的动态调节的场发射阴极。 光束形状调整是通过对栅极发射阴极的栅电极进行分段而实现的，并独立地驱动各个栅极段以形成期望的光束形状。 当光束偏转时，分段可以打开和关闭，允许光束中的像差动态校正。 可以将聚焦透镜放置在门控阴极上以产生平行电子束。 此外，可以制造中空的阴极以使梁中的空间电荷排斥最小化。
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公开(公告)号：US08113689B2
公开(公告)日：2012-02-14
申请号：US11715565
申请日：2007-03-08
申请人： Michael W. Mayo , Daniel R. Mitchell , Michael K. McAleer , Byron G. Zollars , Michael G. Durrett , Keith D. Jamison
发明人： Michael W. Mayo , Daniel R. Mitchell , Michael K. McAleer , Byron G. Zollars , Michael G. Durrett , Keith D. Jamison
IPC分类号： F21V33/00
CPC分类号： F42B27/00 , F42B8/26 , F42B12/36 , F42B12/42 , Y10S362/80
摘要： Projectile apparatus is provided employing light and sound that may be dispersed over a large area with high intensity to produce a non-lethal, visible and audible countermeasure to temporarily blind and/or disorient one or multiple potential adversaries. The apparatus is suitable for use in tactical scenarios by military, police, and special operations personnel. The apparatus is also suitable for use in training operations for military, police, and special operations personnel. For amusement or recreation, the apparatus may be used in simulated warfare or in games such as paintball.
摘要翻译： 使用可以分散在大面积的高强度的光和声的射弹装置，以产生暂时失明和/或迷失一个或多个潜在对手的非致命的，可见的和可听见的对策。 该装置适用于军事，警察，特种作战人员的战术场景。 该装置也适用于军事，警察和特种作战人员的训练。 对于娱乐或娱乐，该装置可以用于模拟战争或游戏如彩弹。
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公开(公告)号：US06664721B1
公开(公告)日：2003-12-16
申请号：US09684107
申请日：2000-10-06
申请人： Keith D. Jamison , Donald E. Patterson , Charlie Hong , Randolph D. Schueller , David F. Hebert , Richard L. Woodin
发明人： Keith D. Jamison , Donald E. Patterson , Charlie Hong , Randolph D. Schueller , David F. Hebert , Richard L. Woodin
IPC分类号： H01J102
摘要： A field emitter (10) having improved electron emission properties is provided. Electron-emitting microtip protrusions (14) in an emitter layer (12) are separated from a dielectric layer (18) by an interlayer (16) that prevents substantial mixing of the dielectric (16) and the emitter layer (12) during growth of the dielectric layer (18). A conductive gate electrode layer (20) is deposited on the dielectric layer (18). For carbon-based emitters, aluminum is one of several suitable interlayers between the carbon layer and a silicon dioxide dielectric layer.
摘要翻译： 提供了具有改善的电子发射特性的场致发射体（10）。 在发射极层（12）中的电子发射微尖端突起（14）通过中间层（16）与电介质层（18）分离，其阻止了电介质（16）和发射极层（12）在生长期间的实质性混合 介电层（18）。 导电栅电极层（20）沉积在电介质层（18）上。 对于碳基发射体，铝是碳层和二氧化硅介电层之间的几种合适的中间层之一。
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10.发明授权Multilayer carbon-based field emission electron device for high current density applications 有权用于高电流密度应用的多层碳基场致发射电子器件公开(公告)号：US06181055B2
公开(公告)日：2001-01-30
申请号：US09169909
申请日：1998-10-12
IPC分类号： H01J102
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30446
摘要： An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device.
摘要翻译： 通过将基板放置在反应器中，加热基板并将浓度约为8％至13％的含碳气体的混合物供应给反应器，同时向混合物中提供能量来提供电子场发射装置， 靠近衬底的气体一段时间，以将第一层碳基材料生长至大于约0.5微米的厚度，随后降低含碳气体的浓度并继续生长第二层碳基材料， 第二层比第一层厚得多。 随后从第一层去除衬底，并将电极施加到第二层。 该器件是独立的，可用作各种电子器件如阴极射线管，放大器和行波管中的冷阴极。 可以在第一层生长之前对衬底的表面进行图案化以在场发射器件上产生图案化表面。
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