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    Benzimidazole compound
    1.
    发明授权
    Benzimidazole compound 失效
    苯并咪唑化合物

    公开(公告)号：US6114369A

    公开(公告)日：2000-09-05

    申请号：US403763

    申请日：1999-11-01

    申请人： Keizo Tanikawa ,  Yoshimasa Kamikawaji ,  Mitsuaki Hirotsuka ,  Takehisa Iwama ,  Akiko Yamamoto ,  Yoichiro Fujita

    发明人： Keizo Tanikawa ,  Yoshimasa Kamikawaji ,  Mitsuaki Hirotsuka ,  Takehisa Iwama ,  Akiko Yamamoto ,  Yoichiro Fujita

    IPC分类号： A61K31/4184 ,  A61P37/08 ,  C07D235/10 ,  C07D235/14 ,  C07D235/30

    CPC分类号： C07D235/14 ,  C07D235/30

    摘要： A benzimidazole derivative of the formula (I) or its salt: wherein A is a single bond or a C.sub.1-2 alkylene group (this alkylene group may optionally be substituted by a C.sub.1-4 alkyl group), R.sup.6 is a C.sub.1-4 alkyl group (this alkyl group may optionally be substituted by a phenyl group), B is a C.sub.2-3 alkylene group (this alkylene group may optionally be substituted by a C.sub.1-4 alkyl group), X is an oxygen atom, a sulfur atom or NR.sup.7 (wherein R.sup.7 is a nitro group, a cyano group or a C.sub.1-4 alkoxy group), each of R.sup.1 and R.sup.2 which are independent of each other, is a hydrogen atom, a halogen atom, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group, E is a C.sub.1-2 alkylene group (this alkylene group may optionally be substituted by a C.sub.1-4 alkyl group), R.sup.3 is a phenyl group (this phenyl group may optionally be substituted by a halogen atom, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group), a C.sub.1-4 alkoxy group or a benzyloxy group, each of R.sup.4 and R.sup.5 which are independent of each other, is a C.sub.1-4 alkyl group (this alkyl group may optionally be substituted by a phenyl group), D is a C.sub.1-2 alkylene group (this alkylene group may optionally be substituted by a C.sub.1-4 alkyl group), and Ar is a phenyl group.

    摘要翻译： PCT No.PCT / JP98 / 01986 Sec。 371日期：1999年11月1日 102（e）1999年11月1日PCT 1998年4月30日PCT PCT。 WO98 / 50368 PCT出版物 日期：1998年11月12日一种式（I）的苯并咪唑衍生物或其盐：其中A为单键或C1-2亚烷基（该亚烷基可任选被C 1-4烷基取代），R 6为 C 1-4烷基（该烷基可以任选被苯基取代），B是C2-3亚烷基（该亚烷基可以任选被C 1-4烷基取代），X是氧原子 ，硫原子或NR 7（其中R 7为硝基，氰基或C 1-4烷氧基），R 1和R 2各自独立地为氢原子，卤素原子，C1- 4烷基或C 1-4烷氧基，E是C1-2亚烷基（该亚烷基可以任选被C 1-4烷基取代），R 3是苯基（该苯基可以任选地被 卤素原子，C 1-4烷基或C 1-4烷氧基），C 1-4烷氧基或苄氧基，R 4和R 5各自独立地为C 1-4烷基（ t 其烷基可任选被苯基取代），D为C1-2亚烷基（该亚烷基可任选被C 1-4烷基取代），Ar为苯基。

    Resist, barc and gap fill material stripping chemical and method
    2.
    发明授权
    Resist, barc and gap fill material stripping chemical and method 有权
    抗蚀剂，棒材和间隙填充材料剥离化学和方法

    公开(公告)号：US07888301B2

    公开(公告)日：2011-02-15

    申请号：US10581475

    申请日：2004-12-01

    申请人： David D. Bernhard ,  Yoichiro Fujita ,  Tomoe Miyazawa ,  Makoto Nakajima

    发明人： David D. Bernhard ,  Yoichiro Fujita ,  Tomoe Miyazawa ,  Makoto Nakajima

    IPC分类号： C11D7/32

    CPC分类号： H01L21/31111 ,  C11D3/044 ,  C11D3/245 ,  C11D3/30 ,  C11D3/43 ,  C11D7/10 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/5004 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071

    摘要： An aqueous-based composition and process for removing photoresist, bottom anti-reflective coating (BARC) material, and/or gap fill material from a substrate having such material(s) thereon. The aqueous-based composition includes a fluoride source, at least one organic amine, at least one organic solvent, water, and optionally chelating agent and/or surfactant. The composition achieves high-efficiency removal of such material(s) in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

    摘要翻译： 一种用于从其上具有这种材料的基材去除光致抗蚀剂，底部抗反射涂层（BARC）材料和/或间隙填充材料的水基组合物和方法。 水基组合物包括氟化物源，至少一种有机胺，至少一种有机溶剂，水和任选的螯合剂和/或表面活性剂。 组合物可以在集成电路的制造中实现这种材料的高效去除，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损坏半导体结构中使用的基于SiOC的介电材料。

    Unsaturated dicarboxylic acid and ethylene urea containing formulation for cleaning semiconductor and cleaning method
    4.
    发明申请
    Unsaturated dicarboxylic acid and ethylene urea containing formulation for cleaning semiconductor and cleaning method 审中-公开
    不饱和二羧酸和含乙烯脲的制剂用于清洗半导体和清洗方法

    公开(公告)号：US20070072782A1

    公开(公告)日：2007-03-29

    申请号：US10577481

    申请日：2004-10-27

    申请人： Tomoe Miyazawa ,  Yoichiro Fujita ,  Ichiro Kobayashi

    发明人： Tomoe Miyazawa ,  Yoichiro Fujita ,  Ichiro Kobayashi

    IPC分类号： C11D7/32

    CPC分类号： C23G1/24 ,  C11D1/662 ,  C11D3/2044 ,  C11D3/2082 ,  C11D3/323 ,  C11D7/265 ,  C11D7/3272 ,  C11D11/0047 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/31116

    摘要： A semiconductor wafer cleaning formulation comprising an unsaturated dicarboxylic acid and ethylene urea, and a cleaning method are provided. The formulation comprises an unsaturated dicarboxylic acid and ethylene urea as essential components, and is used for removing residues in semiconductor fabrication. As the unsaturated dicarboxylic acid, maleic acid is particularly preferable. The preferred formulation comprises an unsaturated dicarboxylic acid, ethylene urea, at least one organic carboxylic acid except unsaturated dicarboxylic acid, at least one basic compound except ethylene urea and water. The formulation can optionally comprise at least one selected from the group consisting of an organic solvent, a chelating agent, a surfactant, and phosphonic acid and/or phosphinic acid.

    摘要翻译： 提供了包含不饱和二羧酸和亚乙基脲的半导体晶片清洁配方以及清洁方法。 该制剂包含不饱和二羧酸和亚乙基脲作为必需组分，并用于除去半导体制造中的残留物。 作为不饱和二羧酸，特别优选马来酸。 优选的制剂包含不饱和二羧酸，亚乙基脲，除了不饱和二羧酸以外的至少一种有机羧酸，除了亚乙基脲和水之外的至少一种碱性化合物。 制剂可任选地包含选自有机溶剂，螯合剂，表面活性剂和膦酸和/或次膦酸的至少一种。