摘要:
A compound shown by the following formula (1) can be used as a material for a radiation-sensitive composition capable of forming a resist film which effectively responds to electron beams or the like, exhibits low roughness, and can form a high precision minute pattern in a stable manner.
摘要:
A compound shown by the following formula (1) can be used as a material for a radiation-sensitive composition capable of forming a resist film which effectively responds to electron beams or the like, exhibits low roughness, and can form a high precision minute pattern in a stable manner.
摘要:
A radiation-sensitive composition includes (A) an acid-dissociable group-containing polymer, and (B) a radiation-sensitive acid generator. The acid-dissociable group-containing polymer (A) includes a polymer that includes a repeating unit shown by a general formula (1) in which R1 represents a hydrogen atom, a methyl group, a fluorine atom, or a trifluoromethyl group, R2 represents a substituted or unsubstituted aryl group having 6 to 22 carbon atoms, Y represents a carbon atom, and X represents an atomic group that forms an alicyclic hydrocarbon group together with Y.
摘要:
A radiation-sensitive resin composition includes a polymer that includes at least one repeating unit (i) selected from a repeating unit shown by a formula (1), (2), and (3); and a repeating unit (ii) shown by a formula (4). R1 represents a hydrogen atom or a methyl group. Each R2 independently represents one of a linear or branched alkyl group having 1 to 12 carbon atoms, a linear or branched alkoxy group having 1 to 12 carbon atoms, and an alicyclic hydrocarbon group having 3 to 25 carbon atoms. p is an integer from 0 to 3, and q is an integer from 1 to 3, and p+q≦5. A chemically-amplified positive-tone resist film that is sensitive to extreme ultraviolet rays (EUV) can be formed using the radiation-sensitive resin composition.
摘要:
A radiation-sensitive resin composition includes a polymer that includes at least one repeating unit (i) selected from a repeating unit shown by a formula (1), (2), and (3); and a repeating unit (ii) shown by a formula (4). R1 represents a hydrogen atom or a methyl group. Each R2 independently represents one of a linear or branched alkyl group having 1 to 12 carbon atoms, a linear or branched alkoxy group having 1 to 12 carbon atoms, and an alicyclic hydrocarbon group having 3 to 25 carbon atoms. p is an integer from 0 to 3, and q is an integer from 1 to 3, and p+q≦5. A chemically-amplified positive-tone resist film that is sensitive to extreme ultraviolet rays (EUV) can be formed using the radiation-sensitive resin composition.
摘要:
A radiation-sensitive composition includes a photoacid generator shown by a general formula (0-1a). Each of R0 individually represents a substituted or unsubstituted organic group which includes a carbon atom, a hydrogen atom, and an oxygen atom, and which includes at least one ester bond, and M+ represents a monovalent onium cation. A compound is shown by a general formula (0). R represents a substituted or unsubstituted organic group which includes a carbon atom, a hydrogen atom, and an oxygen atom, and which includes at least one ester bond, and M+ represents a monovalent onium cation.
摘要翻译:辐射敏感性组合物包括通式(0-1a)所示的光致酸产生剂。 R 0各自独立地表示取代或未取代的包含碳原子,氢原子和氧原子的有机基团,其包含至少一个酯键,M +表示一价鎓阳离子。 化合物由通式(0)表示。 R表示取代或未取代的包含碳原子,氢原子和氧原子的有机基团,其包含至少一个酯键,M +表示一价鎓阳离子。
摘要:
A radiation-sensitive resin composition includes a compound represented by a following formula (1), and a first polymer that serves as a base resin. R1 represents a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, or the like. The M+ represents a monovalent cation. The first polymer (B) is preferably insoluble or hardly soluble in alkali, the polymer including a structure unit represented by a formula (5) or a structure unit represented by a formula (6), and a structure unit represented by a formula (7).
摘要翻译:辐射敏感性树脂组合物包含由下式(1)表示的化合物和作为基础树脂的第一聚合物。 R1表示碳原子数3〜20的一价脂环式烃基等。 M +表示一价阳离子。 第一聚合物(B)优选不溶于或几乎不溶于碱,该聚合物包括由式(5)表示的结构单元或由式(6)表示的结构单元,和由式(7)表示的结构单元 )。
摘要:
A method for forming a resist pattern includes providing a resist film. A protective film is provided on the resist film using a composition for forming the protective film. The composition includes a polymer and an organic solvent. The resist film on which the protective film is provided is exposed to irradiation with EUV light or an electron beam. The exposed resist film is developed.