摘要:
A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.
摘要:
A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.
摘要:
A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.
摘要:
A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.
摘要:
A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.
摘要:
A semiconductor device includes: a passivation film; a first semiconductor layer that has a first main component of 4H—SiC of a first conductivity type; and a second semiconductor layer that has a second main component of 4H—SiC of a second conductivity type. The second semiconductor layer has a pn-junction with the first semiconductor layer. The pn-junction has a junction edge. The first and second semiconductor layers further include a local area that includes the junction edge. The local area has a first principal plane that interfaces with the passivation film. A normal to the first principal plane tilts by a first tilt angle in a range of 25 degrees to 45 degrees from a first axis of [0001] or [000-1] toward a second axis of .
摘要:
A performance information monitoring method using computers includes the steps of accepting information on a group relating to a first computer in the first computer; storing the accepted group information in a storage in the first computer; accepting performance information from a second computer in the first computer; comparing performance information of the second computer previously stored in a storage with the performance information received from the second computer in the first computer; judging whether or not the second computer is included in the information of the group when finding a difference between the performance information in the comparison result; and transmitting an instruction to the computer included in the group information to change a performance information collection interval according to the judgment result.
摘要:
A performance information monitoring method using computers includes the steps of accepting information on a group relating to a first computer in the first computer; storing the accepted group information in a storage in the first computer; accepting performance information from a second computer in the first computer; comparing performance information of the second computer previously stored in a storage with the performance information received from the second computer in the first computer; judging whether or not the second computer is included in the information of the group when finding a difference between the performance information in the comparison result; and transmitting an instruction to the computer included in the group information to change a performance information collection interval according to the judgment result.
摘要:
A power steering apparatus includes a worm wheel mounted on the steering shaft, a worm shaft engaged with the worm wheel, a gear housing having a wheel accommodating portion to accommodate the worm wheel and a shaft accommodating portion to accommodate the worm shaft, a bearing mounted on the worm shaft to rotatably support the worm shaft, a holder disposed in the shaft accommodating portion and having a bearing retaining portion to retain the bearing and a resilient element disposed in the shaft accommodating portion and having a resilient body portion formed with a curvature. The resilient body portion is so structured as to become deformed in such a manner as to increase or decrease in diameter when the bearing shifts in a direction that moves the worm shaft away from the worm wheel and bias the bearing in a direction that urges the worm wheel toward the worm wheel.
摘要:
By finding a range of an allowable error of maximum meshing position of a worm shaft in an axial direction relative to a worm wheel, that is higher than that of a worm shaft of a conventional worm gear unit, a worm gear unit of the present invention is provided.