公开(公告)号：US20070086498A1

公开(公告)日：2007-04-19

申请号：US11472383

申请日：2006-06-22

申请人： Kenichi Ono ,  Masayoshi Takemi ,  Harumi Nishiguchi

发明人： Kenichi Ono ,  Masayoshi Takemi ,  Harumi Nishiguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/34326

摘要： A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first clad layer formed thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than the second buffer layer. By such a structure, when the window layer is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer.

摘要翻译： 在GaAs衬底上堆叠第一缓冲层（GaAs），第二缓冲层（AlGaAs）和由GaAs或AlGaAs构成的扩散抑制层。 该结构具有形成在其上的第一覆盖层。 当AlGaAs用于扩散抑制层时，使AlGaAs的Al比小于第二缓冲层。 通过这样的结构，当形成窗口层时，可以在扩散抑制层中降低杂质（Zn）的扩散速率，并且可以在第二缓冲层处停止杂质的扩散。

公开(公告)号：US07590158B2

公开(公告)日：2009-09-15

申请号：US11472383

申请日：2006-06-22

申请人： Kenichi Ono ,  Masayoshi Takemi ,  Harumi Nishiguchi

发明人： Kenichi Ono ,  Masayoshi Takemi ,  Harumi Nishiguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/34326

摘要： A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first cladding layer thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than in the second buffer layer. In such a structure, when a window region is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer.

摘要翻译： 在GaAs衬底上堆叠第一缓冲层（GaAs），第二缓冲层（AlGaAs）和由GaAs或AlGaAs构成的扩散抑制层。 该结构在其上具有第一覆层。 当AlGaAs用于扩散抑制层时，使AlGaAs的Al比小于第二缓冲层。 在这种结构中，当形成窗口区域时，可以在扩散抑制层中降低杂质（Zn）的扩散速率，并且可以在第二缓冲层处停止杂质的扩散。

公开(公告)号：US20080054277A1

公开(公告)日：2008-03-06

申请号：US11923751

申请日：2007-10-25

申请人： Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

发明人： Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/3436

摘要： The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.

摘要翻译： 半导体激光器件包括有源层，p型覆层和p型覆盖层。 依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。 在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。 第一层远离有源层，第二层靠近有源层。 在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。 根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。

公开(公告)号：US20110183453A1

公开(公告)日：2011-07-28

申请号：US12862829

申请日：2010-08-25

申请人： Misao Hironaka ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki

发明人： Misao Hironaka ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki

IPC分类号： H01L21/18

CPC分类号： H01S5/0202 ,  H01S5/0203 ,  H01S5/32341

摘要： A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.

摘要翻译： 一种半导体器件的制造方法，包括在基板上形成半导体层叠结构，作为包含半导体激光结构的晶片; 在所述晶片的主表面上的所述半导体激光器结构之间形成第一凹槽; 在形成所述第一凹槽之后，将所述晶片分离成激光棒，所述激光棒包括排列成棒状的所述半导体激光结构中的至少两个; 在激光棒的第一槽中形成第二槽，第二槽的宽度不比第一槽宽; 以及将所述激光棒中的一个沿着所述第二凹槽分离成相应的半导体激光器。

公开(公告)号：US07804871B2

公开(公告)日：2010-09-28

申请号：US12179627

申请日：2008-07-25

申请人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

发明人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/22

摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.

摘要翻译： 提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的 。 确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。 在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。 因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状 水平方向的远场模式是稳定的。

公开(公告)号：US07796664B2

公开(公告)日：2010-09-14

申请号：US12348061

申请日：2009-01-02

申请人： Yasuyuki Nakagawa ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki ,  Takeo Shirahama ,  Yosuke Suzuki ,  Hiromasu Matsuoka

发明人： Yasuyuki Nakagawa ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki ,  Takeo Shirahama ,  Yosuke Suzuki ,  Hiromasu Matsuoka

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/028

摘要： A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.

摘要翻译： GaN激光器包括在发射激光的前端表面上的涂膜。 涂膜包括与前端表面接触的第一绝缘膜和第一绝缘膜上的第二绝缘膜。 第二绝缘膜的光学膜厚度相对于由半导体激光器产生的激光的波长λ为λ/ 4的奇数倍。 第一绝缘膜对GaN的附着力比第二绝缘膜对GaN的粘合强。 第二绝缘膜的折射率为2〜2.3μm。 第一绝缘膜为10nm以下。 第一绝缘膜是具有化学计量组成的氧化膜。

公开(公告)号：US07756180B2

公开(公告)日：2010-07-13

申请号：US11269627

申请日：2005-11-09

申请人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

发明人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/22

摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.

摘要翻译： 提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的 。 确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。 大于0.0001且小于0.01的比E1 / E2。 在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。 因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状 水平方向的远场模式是稳定的。

公开(公告)号：US06333946B1

公开(公告)日：2001-12-25

申请号：US09370911

申请日：1999-08-10

申请人： Motoharu Miyashita ,  Harumi Nishiguchi ,  Akihiro Shima ,  Yuji Ohkura

发明人： Motoharu Miyashita ,  Harumi Nishiguchi ,  Akihiro Shima ,  Yuji Ohkura

IPC分类号： H01S522

CPC分类号： B82Y20/00 ,  H01S5/2086 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3432

摘要： A forward mesa ridge-embedded semiconductor laser device provides a high power output and includes a base portion of a forward mesa ridge having a narrow width to stabilize transverse mode oscillation and an upper cladding layer having a thickness sufficient to reduce loss of the laser beam, a top portion of the forward mesa ridge being interposed between parts of the current blocking layer to reduce the device resistance. The upper cladding layer includes a first cladding layer having the forward mesa ridge and a second cladding layer opposite the first cladding layer. The second cladding layer is deposited over the first cladding layer through the forward mesa ridge and a current blocking layer is positioned on both sides of the forward mesa ridge.

摘要翻译： 正向台阶脊嵌入式半导体激光装置提供高功率输出，并且包括具有窄宽度的前台面脊的基部以稳定横模振荡，以及具有足以减少激光束损耗的厚度的上包层， 前部台面脊的顶部插入在电流阻挡层的部分之间以减小器件电阻。 上包层包括具有前台面脊的第一包层和与第一包层相对的第二包层。 第二包层通过前台面脊沉积在第一包层上，并且电流阻挡层位于前台面脊的两侧。

公开(公告)号：US08435869B2

公开(公告)日：2013-05-07

申请号：US12862829

申请日：2010-08-25

申请人： Misao Hironaka ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki

发明人： Misao Hironaka ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki

IPC分类号： H01L21/00

CPC分类号： H01S5/0202 ,  H01S5/0203 ,  H01S5/32341

摘要： A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.

摘要翻译： 一种半导体器件的制造方法，包括在基板上形成半导体层叠结构，作为包含半导体激光结构的晶片; 在所述晶片的主表面上的所述半导体激光器结构之间形成第一凹槽; 在形成所述第一凹槽之后，将所述晶片分离成激光棒，所述激光棒包括排列成棒状的所述半导体激光结构中的至少两个; 在激光棒的第一槽中形成第二槽，第二槽的宽度不比第一槽宽; 以及将所述激光棒中的一个沿着所述第二凹槽分离成相应的半导体激光器。

公开(公告)号：US20080310473A1

公开(公告)日：2008-12-18

申请号：US12179627

申请日：2008-07-25

申请人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

发明人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

IPC分类号： H01S5/22 ,  H01S5/20

CPC分类号： H01S5/22

摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.

摘要翻译： 提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的 。 确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。 在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。 因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状 水平方向的远场模式是稳定的。