摘要:
An imaging system is provided and includes an imaging lens and an imaging device such that the maximum diameter of an effective region of a point image covers three or more pixels of light receiving pixels, the point image being projected onto a light receiving surface through the imaging lens from an intended position. A signal processing unit executes restoration processing on first image data output from the imaging device, and the restoration processing is executed to generate second image data equivalent to the first image data output from the imaging device when the resolving power of the imaging lens is higher. The imaging lens has a first lens group having a positive power, a second lens group having a negative power, and a third lens group in which a lens positioned closest to an image side has a positive power, in order from the object side.
摘要:
Provided is a joint which can decrease the number of kinds of parts. A bolt 5 has a shaft portion 14 which is constituted of a distal end portion on which male threads 14a are formed and a remaining portion 14b on which male threads are not formed. First and second joint members 2, 3 have the same shape. A shaft insertion hole 15 which is disposed on an abutting end surface side of the joint member and a threaded hole 16 which is communicated with the shaft insertion hole 15 and extends to an end surface of the joint member on a side opposite to an abutting end surface of the joint member are formed in the first and second joint members 2, 3.
摘要:
Disclosed is a composite sheet 1 composed of a substantially flat lower fibrous sheet 3 and an upper fibrous sheet 2 bonded to the lower fibrous sheet 3. The upper fibrous sheet 2 is three-dimensionally textured with a number of projections 5 and a number of depression 6 each of which is located between every adjacent two of the projections 5. The projections 5 and the depressions 6 alternate in both a first direction of the composite sheet 1 and a second direction perpendicular to the first direction. Each projection 5 has a pair of opposing first walls 51 parallel to the first direction and a pair of opposing second walls 52 parallel to the second direction. The basis weight of the first walls 51 is different from that of the second walls 52.
摘要:
There is provided an oscillator using a high-frequency crystal resonator which can satisfy the drive level needed for the crystal resonator and expand a variable frequency range. An oscillator having an oscillation circuit CC for oscillating the resonator SS is provided with a limiter circuit LM1 as a load of the resonator SS which is inductive and is a load circuit for limiting an oscillation amplitude. According to this configuration, the action of the limiter circuit LM1 allows satisfaction of the drive level needed for the crystal resonator and expansion of the variable frequency range.
摘要:
This photodiode array 10 includes quenching resistors 7 which are connected in series to respective avalanche photodiodes APDs, a peripheral wiring WL which surrounds a region in which the plurality of avalanche photodiodes APDs are formed, and a plurality of relay wirings 8 which are electrically connected to the peripheral wiring WL, so as to respectively connect at least two places of the peripheral wiring WL. One of an anode and a cathode of each avalanche photodiode APD is electrically connected to any one of the relay wirings 8 via the quenching resistor 7, and the other of the anode and the cathode of each avalanche photodiode APD is electrically connected to another electrode 6 provided on a semiconductor substrate.
摘要:
An apparatus for an exhaust gas system includes a main exhaust passage, a main catalytic converter disposed in the main exhaust passage, a bypass exhaust passage, a bypass catalytic converter disposed in the bypass exhaust passage, and a valve configured to open or close a section of the main exhaust passage. The bypass exhaust passage bypasses the main exhaust passage between a branch point of the bypass exhaust passage out of the main exhaust passage and a junction with the main exhaust passage at a upstream side of the main catalytic converter. A first sensor indicates a first air-fuel ratio of exhaust gas in the bypass exhaust passage. A second sensor indicates a second air-fuel ratio of exhaust gas flowing into the main catalytic converter. A controller determines whether the valve in the closed configuration leaks exhaust gas based on the first and second air-fuel ratios of exhaust gas.
摘要:
An aggregate of carbon nanotubes satisfying all of the following requirements (1) to (3):(1) the volume resistivity is from 1×10−5 Ω·cm to 5×10−3 Ω·cm;(2) at least 50 out of 100 carbon nanotubes are double-walled carbon nanotubes in observation by a transmission electron microscope; and(3) the weight loss from 200° C. to 400° C. in thermogravimetry at a temperature rise of 10° C/min is from 5% to 20%.
摘要:
A photodiode array 1 has a plurality of photodetector channels 10 which are formed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p−-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p−-type semiconductor layer 13 forms a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating part 20 is formed so that each of the multiplication regions AM of the p−-type semiconductor layer 13 corresponds to each of the photodetector channels 10.
摘要:
A photodiode array 1 has a plurality of photodetector channels 10 which are formed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p−-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p−-type semiconductor layer 13 forms a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating part 20 is formed so that each of the multiplication regions AM of the p−-type semiconductor layer 13 corresponds to each of the photodetector channels 10.