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    VEHICLE FRONT HOOD STRUCTURE
    3.
    发明申请
    VEHICLE FRONT HOOD STRUCTURE 有权
    车身前结构

    公开(公告)号：US20130241241A1

    公开(公告)日：2013-09-19

    申请号：US13990870

    申请日：2012-01-06

    申请人： Mai Sekikawa ,  Masato Ishibashi

    发明人： Mai Sekikawa ,  Masato Ishibashi

    IPC分类号： B62D25/10

    CPC分类号： B62D25/105 ,  B60R21/34 ,  B60R2021/343

    摘要： A hood frame is provided with a center bead, front radiating beads and rear radiating beads to ensure that the front hood bends in the shape of inverted letter-V under a frontal crash load. Further, the beads provide the hood frame with a stiffness (including an out-of-plane stiffness) which is required of the front hood while the downward deformation of the hood frame under a downward load can be controlled and the HIC level can be set at an appropriate level.

    摘要翻译： 罩框架设有中心珠，前辐射珠和后辐射珠，以确保前罩在正面碰撞载荷下呈倒立字母V的形状弯曲。 此外，小珠为罩框架提供前罩所需的刚度（包括平面外的刚度），同时可以控制罩框架在向下的负载下的向下变形并且可以设定HIC水平 在适当的水平。

    TOPCOAT
    4.
    发明申请
    TOPCOAT 有权

    公开(公告)号：US20110078862A1

    公开(公告)日：2011-04-07

    申请号：US12992895

    申请日：2009-05-15

    申请人： Shinji Kashiwagura ,  Masahiko Ogawa ,  Takashi Ono ,  Miwa Tada (Formerly Murakata) ,  Yoshiyuki Ito ,  Masato Ishibashi ,  Takashi Yamaguchi

    发明人： Shinji Kashiwagura ,  Masahiko Ogawa ,  Takashi Ono ,  Miwa Tada (Formerly Murakata) ,  Yoshiyuki Ito ,  Masato Ishibashi ,  Takashi Yamaguchi

    IPC分类号： C14C11/00

    CPC分类号： C14C11/006 ,  C08G18/706 ,  C09D175/04 ,  C14B7/02 ,  C14C1/065 ,  C14C3/20 ,  C14C3/22 ,  C14C3/28 ,  C14C9/02 ,  D06P1/02 ,  D06P1/5285 ,  D06P3/3206 ,  D06P3/3286 ,  C08L2666/20

    摘要： Provided is a natural leather having a novel coating layer which feels leathery. The coating film retains material properties such as strength and wearing resistance. When the user directly touches the natural leather, the coating layer present on the surface of the natural leather gives slick characteristics of natural leathers and smoothness. The natural leather has a coating film formed on a surface thereof, the coating film including: a color coat layer formed from a mixture of a hard component (10% modulus is more than 2.3 but no more than 3.0) and a soft component (10% modulus is more than 0.0 but no more than 1.0) of a two-component polyurethane resin; and a topcoat layer formed from a mixture of a medium component (resin having a 10% modulus of more than 1.0 but no more than 2.3) and a soft component (resin having a 10% modulus of more than 0.0 but no more than 1.0) of a two-component polyurethane resin.

    摘要翻译： 提供具有感觉革质的新颖涂层的天然皮革。 涂膜保持材料性能如强度和耐磨性。 当用户直接接触天然皮革时，天然皮革表面上的涂层具有天然皮革的光滑特性和光滑度。 天然皮革在其表面上具有涂膜，所述涂膜包括：由硬组分（10％模量大于2.3且不大于3.0）和软组分（10）的混合物形成的着色涂层 ％模量大于0.0，但不大于1.0）的双组分聚氨酯树脂; 和由中间成分（10％以上的模量大于1.0但不超过2.3的树脂）和软成分（10％模量大于0.0但不超过1.0的树脂）的混合物形成的面漆层， 的双组分聚氨酯树脂。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20100044802A1

    公开(公告)日：2010-02-25

    申请号：US12495070

    申请日：2009-06-30

    申请人： Masato Ishibashi ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Takaaki Tsunomura ,  Takashi Kuroi

    发明人： Masato Ishibashi ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Takaaki Tsunomura ,  Takashi Kuroi

    IPC分类号： H01L29/06 ,  H01L21/762

    CPC分类号： H01L21/763 ,  H01L21/76224 ,  H01L29/7846

    摘要： Provided are a semiconductor device making it possible to form an element region having a dimension close to a designed dimension, restrain a phenomenon similar to gate-induced drain leakage, and further restrain compressive stress to be applied to the element region by oxidation of a conductive film; and a method for manufacturing the semiconductor device. Trenches are made in a main surface of a semiconductor substrate. By oxidizing the wall surface of each of the trenches, a first oxide film is formed on the wall surface. An embedded conductive film is formed to be embedded into the trench. The embedded conductive film is oxidized in an atmosphere containing an active oxidizing species, thereby forming a second oxide film. A third oxide film is formed on the second oxide film by CVD or coating method.

    摘要翻译： 提供一种半导体器件，其可以形成具有接近设计尺寸的尺寸的元件区域，抑制类似于栅极引起的漏极泄漏的现象，并且进一步抑制通过导电的氧化对元件区域施加的压缩应力 电影; 以及半导体装置的制造方法。 沟槽在半导体基板的主表面上制成。 通过氧化每个沟槽的壁表面，在壁表面上形成第一氧化膜。 嵌入的导电膜被形成为嵌入到沟槽中。 嵌入的导电膜在含有活性氧化物质的气氛中被氧化，从而形成第二氧化膜。 通过CVD或涂布法在第二氧化物膜上形成第三氧化物膜。

    Vehicle front hood structure
    6.
    发明授权
    Vehicle front hood structure 有权
    车前罩结构

    公开(公告)号：US08845012B2

    公开(公告)日：2014-09-30

    申请号：US13990870

    申请日：2012-01-06

    申请人： Mai Sekikawa ,  Masato Ishibashi

    发明人： Mai Sekikawa ,  Masato Ishibashi

    IPC分类号： B62D25/10 ,  B60R21/34

    CPC分类号： B62D25/105 ,  B60R21/34 ,  B60R2021/343

    摘要： A hood frame is provided with a center bead, front radiating beads and rear radiating beads to ensure that the front hood bends in the shape of inverted letter-V under a frontal crash load. Further, the beads provide the hood frame with a stiffness (including an out-of-plane stiffness) which is required of the front hood while the downward deformation of the hood frame under a downward load can be controlled and the HIC level can be set at an appropriate level.

    摘要翻译： 罩框架设有中心珠，前辐射珠和后辐射珠，以确保前罩在正面碰撞载荷下呈倒立字母V的形状弯曲。 此外，小珠为罩框架提供前罩所需的刚度（包括平面外的刚度），同时可以控制罩框架在向下的负载下的向下变形并且可以设定HIC水平 在适当的水平。

    Semiconductor device and manufacturing method thereof
    7.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08592284B2

    公开(公告)日：2013-11-26

    申请号：US12495070

    申请日：2009-06-30

    申请人： Masato Ishibashi ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Takaaki Tsunomura ,  Takashi Kuroi

    发明人： Masato Ishibashi ,  Katsuyuki Horita ,  Tomohiro Yamashita ,  Takaaki Tsunomura ,  Takashi Kuroi

    IPC分类号： H01L21/76

    CPC分类号： H01L21/763 ,  H01L21/76224 ,  H01L29/7846

    摘要： Provided are a semiconductor device making it possible to form an element region having a dimension close to a designed dimension, restrain a phenomenon similar to gate-induced drain leakage, and further restrain compressive stress to be applied to the element region by oxidation of a conductive film; and a method for manufacturing the semiconductor device. Trenches are made in a main surface of a semiconductor substrate. By oxidizing the wall surface of each of the trenches, a first oxide film is formed on the wall surface. An embedded conductive film is formed to be embedded into the trench. The embedded conductive film is oxidized in an atmosphere containing an active oxidizing species, thereby forming a second oxide film. A third oxide film is formed on the second oxide film by CVD or coating method.

    摘要翻译： 提供一种半导体器件，其可以形成具有接近设计尺寸的尺寸的元件区域，抑制类似于栅极引起的漏极泄漏的现象，并且进一步抑制通过导电的氧化对元件区域施加的压缩应力 电影; 以及半导体装置的制造方法。 沟槽在半导体基板的主表面上制成。 通过氧化每个沟槽的壁表面，在壁表面上形成第一氧化膜。 嵌入的导电膜被形成为嵌入到沟槽中。 嵌入的导电膜在含有活性氧化物质的气氛中被氧化，从而形成第二氧化物膜。 通过CVD或涂布法在第二氧化物膜上形成第三氧化物膜。

    Semiconductor Device and Its Manufacturing Method
    9.
    发明申请
    Semiconductor Device and Its Manufacturing Method 失效
    半导体器件及其制造方法

    公开(公告)号：US20070241373A1

    公开(公告)日：2007-10-18

    申请号：US11577878

    申请日：2005-10-18

    申请人： Takashi Kuroi ,  Katsuyuki Horita ,  Masashi Kitazawa ,  Masato Ishibashi

    发明人： Takashi Kuroi ,  Katsuyuki Horita ,  Masashi Kitazawa ,  Masato Ishibashi

    IPC分类号： H01L29/768 ,  H01L21/76 ,  H01L29/00

    CPC分类号： H01L21/823475 ,  H01L21/743 ,  H01L21/76229 ,  H01L21/763 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823878 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In the process of manufacturing a semiconductor device, a first layer is formed on a substrate, and the first layer and the substrate are etched to form a trench. The inner wall of the trench is thermally oxidized. On the substrate, including inside the trench, is deposited a first conductive film having a thickness equal to or larger than one half of the width of the trench. The first conductive film on the first layer is removed by chemical mechanical polishing such that the first conductive film remains in only the trench. The height of the first conductive film in the trench is adjusted to be lower than a surface of the substrate by anisotropically etching the first conductive film. An insulating film is deposited on the substrate by chemical vapor deposition to cover an upper surface of the first conductive film in the trench. The insulating film is flattened by chemical mechanical polishing, and the first layer is removed.

    摘要翻译： 在制造半导体器件的过程中，在衬底上形成第一层，并且蚀刻第一层和衬底以形成沟槽。 沟槽的内壁被热氧化。 在包括沟槽内部的衬底上沉积厚度等于或大于沟槽宽度的一半的第一导电膜。 通过化学机械抛光去除第一层上的第一导电膜，使得第一导电膜仅保留在沟槽中。 通过各向异性蚀刻第一导电膜，将沟槽中的第一导电膜的高度调节为低于衬底的表面。 通过化学气相沉积在衬底上沉积绝缘膜以覆盖沟槽中的第一导电膜的上表面。 绝缘膜通过化学机械抛光而变平，第一层被去除。

    Transportation seat with release barrier fabrics
    10.
    发明授权
    Transportation seat with release barrier fabrics 有权
    运输座椅与释放屏障织物

    公开(公告)号：US06769146B2

    公开(公告)日：2004-08-03

    申请号：US10337937

    申请日：2003-01-07

    申请人： Todd Copeland ,  Roy P. DeMott ,  Thomas E. Godfrey ,  Masato Ishibashi ,  William C. Kimbrell, Jr. ,  Samuel J. Lynn ,  Patricia Scott

    发明人： Todd Copeland ,  Roy P. DeMott ,  Thomas E. Godfrey ,  Masato Ishibashi ,  William C. Kimbrell, Jr. ,  Samuel J. Lynn ,  Patricia Scott

    IPC分类号： A47C726

    CPC分类号： B60N2/58

    摘要： A fabric having a unique combination of stain resistance, fluid barrier properties, aesthetic characteristics and drape ability is described, and a method of making such fabrics. The fabric includes a fabric substrate that has been treated with a low surface energy stain resist compound on at least one of its surfaces, and one or more layers secured to the other of its surfaces, with the layers providing the fabric with the unique combination of characteristics. In addition, the fabric is desirably provided with flame resisting and ultraviolet resisting characteristics, to enable it to be used as a seating material for transportation vehicles. Methods for making the fabric are also described.

    摘要翻译： 描述了具有抗污性，流体阻隔性，美学特性和悬垂能力的独特组合的织物，以及制造这种织物的方法。 织物包括织物基材，其已经在其表面中的至少一个上用低表面能抗污剂化合物处理，并且一个或多个层固定到其另一个表面，其中层向织物提供独特的组合 特点 此外，优选地，织物具有阻燃和抗紫外线特性，使其能够用作运输车辆的座椅材料。 还描述了制造织物的方法。