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    Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifier
    1.
    发明授权
    Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifier 有权
    氮化物半导体器件，Doherty放大器和漏极电压控制放大器

    公开(公告)号：US07859020B2

    公开(公告)日：2010-12-28

    申请号：US12173392

    申请日：2008-07-15

    申请人： Toshihide Kikkawa ,  Kenji Imanishi

    发明人： Toshihide Kikkawa ,  Kenji Imanishi

    IPC分类号： H01L31/072

    CPC分类号： H03F1/0288 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/7787 ,  H03F2200/15 ,  H03F2200/451 ,  H03F2200/543

    摘要： A nitride semiconductor device includes a substrate, a stacked semiconductor structure formed over the substrate and including a electron channel layer of an undoped nitride semiconductor and an electron supplying layer of an n-type nitride semiconductor formed epitaxially over the electron channel layer, the n-type nitride semiconductor having an electron affinity smaller than an electron affinity of said undoped nitride semiconductor and a two-dimensional electron gas being formed in the electron channel layer along an interface to the electron supply layer, a gate electrode formed over the stacked semiconductor structure in correspondence to a channel region, and source and drain electrodes formed over the stacked semiconductor structure in ohmic contact therewith respectively at a first side and a second side of the gate electrode, the stacked semiconductor structure including, between the substrate and the electron channel layer, an n-type conductive layer and a barrier layer containing Al formed consecutively and epitaxially.

    摘要翻译： 氮化物半导体器件包括衬底，在衬底上形成的堆叠半导体结构，并且包括在电子沟道层外部形成的非掺杂氮化物半导体的电子沟道层和n型氮化物半导体的电子供给层， 具有小于所述未掺杂的氮化物半导体的电子亲和力的电子亲和力的二次电子气体和沿着与电子供应层的界面在电子通道层中形成的二维电子气的氮化物半导体，形成在堆叠半导体结构上的栅电极 对应于沟道区，以及源极和漏极，其形成在层叠的半导体结构上，分别与栅电极的第一侧和第二侧欧姆接触，该层叠半导体结构包括在衬底和电子通道层之间， n型导电层和阻挡层 aining铝连续形成和外延形成。

    Compound semiconductor device and doherty amplifier using compound semiconductor device
    2.
    发明授权
    Compound semiconductor device and doherty amplifier using compound semiconductor device 有权
    使用化合物半导体器件的复合半导体器件和doherty放大器

    公开(公告)号：US07777251B2

    公开(公告)日：2010-08-17

    申请号：US12591574

    申请日：2009-11-24

    申请人： Toshihide Kikkawa ,  Kenji Imanishi

    发明人： Toshihide Kikkawa ,  Kenji Imanishi

    IPC分类号： H01L29/80

    CPC分类号： H01L29/7785 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66462 ,  H03F1/0288

    摘要： A lower electron supply layer is disposed over a lower electron transport layer made of compound semiconductor. The lower electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the lower electron transport layer. An upper electron transport layer is disposed over the lower electron supply layer. The upper electron transport layer is made of compound semiconductor having a doping concentration lower than that of the lower electron supply layer or non-doped compound semiconductor. An upper electron supply layer is disposed over the upper electron transport layer. The upper electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the upper electron transport layer. A source and drain electrodes are disposed over the upper electron supply layer. A gate electrode is disposed over the upper electron supply layer between the source and drain electrodes.

    摘要翻译： 较低的电子供应层设置在由化合物半导体制成的较低电子传输层上。 较低的电子供应层由电子亲和力小于低电子传输层的n型化合物半导体制成。 上电子传输层设置在下电子供应层上。 上部电子传输层由具有低于下部电子供给层或非掺杂化合物半导体的掺杂浓度的化合物半导体制成。 上电子供给层设置在上电子传输层上。 上电子供给层由电子亲和力小于上电子传输层的n型化合物半导体制成。 源电极和漏电极设置在上电子供应层上。 栅电极设置在源电极和漏电极之间的上电子供应层上。

    Compound semiconductor device and method of manufacturing the same
    5.
    发明授权
    Compound semiconductor device and method of manufacturing the same 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US08426260B2

    公开(公告)日：2013-04-23

    申请号：US13294726

    申请日：2011-11-11

    申请人： Toyoo Miyajima ,  Toshihide Kikkawa ,  Kenji Imanishi ,  Toshihiro Ohki ,  Masahito Kanamura

    发明人： Toyoo Miyajima ,  Toshihide Kikkawa ,  Kenji Imanishi ,  Toshihiro Ohki ,  Masahito Kanamura

    IPC分类号： H01L21/338 ,  H01L29/66

    CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7787

    摘要： A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.

    摘要翻译： 化合物半导体器件包括：形成在衬底上的电子传输层; 形成在电子传输层上的电子供应层; 以及形成在所述电子供给层上的盖层; 盖层包括含有GaN的第一化合物半导体层; 含有AlN的第二化合物半导体层，其形成在所述第一化合物半导体层上; 含有GaN的第三化合物半导体层，其形成在所述第二化合物半导体层上; 以及第一AlGaN含有层和第二含AlGaN的层中的至少一个，其中形成在第一化合物半导体层和第二化合物半导体层之间的第一AlGaN含有层，并且Al含量朝向第​​二化合物半导体层增加 并且形成在第二化合物半导体层和第三化合物半导体层之间的第二AlGaN含量层和Al含量朝向第​​二化合物半导体层增加。

    Compound semiconductor device and method of manufacturing the same
    6.
    发明授权
    Compound semiconductor device and method of manufacturing the same 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US08294181B2

    公开(公告)日：2012-10-23

    申请号：US12697391

    申请日：2010-02-01

    申请人： Toshihide Kikkawa ,  Kenji Imanishi

    发明人： Toshihide Kikkawa ,  Kenji Imanishi

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

    摘要： A compound semiconductor device is provided with a substrate, an AlN layer formed over the substrate, an AlGaN layer formed over the AlN layer and larger in electron affinity than the AlN layer, another AlGaN layer formed over the AlGaN layer and smaller in electron affinity than the AlGaN layer. Furthermore, there are provided an i-GaN layer formed over the latter AlGaN layer, and an i-AlGaN layer and an n-AlGaN layer formed over the i-GaN layer.

    摘要翻译： 化合物半导体器件设置有衬底，在衬底上形成的AlN层，在AlN层上形成的AlGaN层和比AlN层更大的电子亲和力，在AlGaN层上形成另一AlGaN层，并且电子亲和力小于 AlGaN层。 此外，提供了形成在后面的AlGaN层上的i-GaN层，以及在i-GaN层上形成的i-AlGaN层和n-AlGaN层。

    Compound semiconductor structure
    8.
    发明授权
    Compound semiconductor structure 有权
    化合物半导体结构

    公开(公告)号：US08030164B2

    公开(公告)日：2011-10-04

    申请号：US12248357

    申请日：2008-10-09

    申请人： Toshihide Kikkawa ,  Kenji Imanishi

    发明人： Toshihide Kikkawa ,  Kenji Imanishi

    IPC分类号： H01L29/205 ,  H01L21/336 ,  H01L29/778

    CPC分类号： H01L29/7787 ,  H01L21/02378 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462

    摘要： A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×105 Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×103 Ωcm to 1×105 Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×105 Ωcm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 μm on the conductive SiC substrate by hydride VPE.

    摘要翻译： 一种化合物半导体结构的制造方法，包括：（a）根据颜色和电阻率选择导电性SiC基板，（b）在选择的导电性SiC基板上外延生长GaN系化合物半导体层。 步骤（a）优选选择导电型为n型，电阻率为0.08〜OHgr·cm〜1×105Ω·cm的导电性SiC基板，其主色为黑色，导电型 是p型，电阻率为1×10 3Ω·OHgr·cm〜1×105＆OHgr·cm，或其主要颜色为蓝色，其导电类型为p型，电阻率为10＆OHgr; cm至1×105＆OHgr; 厘米。 步骤（b）优选包括（b-1）通过氢化物VPE在导电SiC衬底上生长厚度不小于10μm的AlInGaN层。