公开(公告)号：US5634208A

公开(公告)日：1997-05-27

申请号：US622044

申请日：1996-03-26

申请人： Kenjiro Nishikawa ,  Ichihiko Toyoda ,  Tsuneo Tokumitsu ,  Kenji Kamogawa

发明人： Kenjiro Nishikawa ,  Ichihiko Toyoda ,  Tsuneo Tokumitsu ,  Kenji Kamogawa

IPC分类号： H01P3/08 ,  H05K1/00 ,  H05K1/02 ,  H04B1/26 ,  H01P5/12 ,  H01P5/16

CPC分类号： H01P3/088 ,  H05K1/0237 ,  H05K1/0298

摘要： A hybrid including a substrate, a first dielectric layer, a ground metal, and a second dielectric layer, which are stacked in this order. Transmission lines are formed below and above the ground metal, and a slit is formed in the ground metal at a position corresponding to projection of the transmission lines onto the ground metal. The substrate has a greater dielectric constant than the dielectric layers. This makes it possible to prevent coupling between the upper and lower transmission lines, thereby implementing a high impedance, low loss transmission lines.

摘要翻译： 包括依次层叠的基板，第一电介质层，接地金属和第二电介质层的混合体。 传输线形成在接地金属的下方和上方，并且在对应于传输线投影到接地金属上的位置处，在接地金属中形成狭缝。 衬底具有比介电层更大的介电常数。 这使得可以防止上下传输线之间的耦合，从而实现高阻抗，低损耗传输线。

公开(公告)号：US5973575A

公开(公告)日：1999-10-26

申请号：US22536

申请日：1998-02-12

申请人： Kenji Kamogawa ,  Kenjiro Nishikawa ,  Ichihiko Toyoda ,  Tsuneo Tokumitsu

发明人： Kenji Kamogawa ,  Kenjiro Nishikawa ,  Ichihiko Toyoda ,  Tsuneo Tokumitsu

IPC分类号： H03B1/00 ,  H03B5/12 ,  H03B5/18

CPC分类号： H03B5/18 ,  H03B5/1203 ,  H03B5/1231 ,  H03B5/1259 ,  H03B5/1293 ,  H03B2201/0208

摘要： A voltage controlled oscillator for wide tuning range of frequency with less phase noise has a bipolar transistor provided with a positive feedback circuit between a base and an emitter of the transistor, an impedance matching circuit coupled with a collector of the transistor and an output terminal, a resistor coupled between the base of the transistor and a control source which provides control voltage for adjusting oscillation frequency of the oscillator. The base of the transistor shows capacitive negative impedance, and an inductive element is coupled with the base of the transistor for oscillation. The emitter of the transistor is grounded for D.C. voltage through an inductor or a transmission line, or coupled with a control voltage.

摘要翻译： 用于具有较小相位噪声的宽调谐频率范围的压控振荡器具有在晶体管的基极和发射极之间提供正反馈电路的双极晶体管，与晶体管的集电极耦合的阻抗匹配电路和输出端子， 耦合在晶体管的基极和控制源之间的电阻器，其提供用于调节振荡器的振荡频率的控制电压。 晶体管的基极表示容性负阻抗，并且电感元件与用于振荡的晶体管的基极耦合。 晶体管的发射极通过电感器或传输线接地直流电压，或与控制电压耦合。

公开(公告)号：US5739560A

公开(公告)日：1998-04-14

申请号：US528411

申请日：1995-09-14

申请人： Ichihiko Toyoda ,  Tsuneo Tokumitsu ,  Kenjiro Nishikawa ,  Kenji Kamogawa

发明人： Ichihiko Toyoda ,  Tsuneo Tokumitsu ,  Kenjiro Nishikawa ,  Kenji Kamogawa

IPC分类号： H01L23/66 ,  H01L27/10 ,  H01L29/00

CPC分类号： H01L23/66 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A monolithic integrated circuit utilizing areas associated with unused devices for wiring signal lines, thereby implementing effective wiring and improving high frequency characteristics. A common substrate consisting of a semiconductor substrate, and active devices, capacitor electrodes and resistors formed on the semiconductor substrate, is followed by a dielectric film, a ground metal, a dielectric film whose thickness is equal to or greater than 1 .mu.m, and signal lines. A desired circuit is formed by connecting the signal lines with electrodes of the active devices and other elements via, holes in the dielectric films, and windows of the ground metal. The windows of the ground metal are formed over portions of active devices which are used as components of the circuit.

摘要翻译： 利用与用于布线信号线的未使用装置相关联的区域的单片集成电路，从而实现有效布线并提高高频特性。 由半导体衬底以及形成在半导体衬底上的有源器件，电容器电极和电阻器构成的公共衬底之后是电介质膜，接地金属，厚度等于或大于1μm的电介质膜，以及 信号线。 通过将信号线与有源器件和其他元件的电极，电介质膜中的孔和接地金属的窗口连接而形成期望的电路。 接地金属的窗口形成在用作电路的部件的有源器件的部分上。

公开(公告)号：US6150897A

公开(公告)日：2000-11-21

申请号：US49011

申请日：1998-03-27

申请人： Kenjiro Nishikawa ,  Ichihiko Toyoda ,  Tsuneo Tokumitsu

发明人： Kenjiro Nishikawa ,  Ichihiko Toyoda ,  Tsuneo Tokumitsu

IPC分类号： H01P5/10 ,  H03D9/06

CPC分类号： H01P5/10

摘要： A Marchand balun cirucit having a pair of coupled lines of quarter wavelength for dividing and/or combining signals with the same amplitude and opposite phase with each other is improved by inserting a cancellation element between said pair of coupled lines. Said cancellation element may be a transmission line, a capacitor, or an inductor which improves amplitude difference error and phase difference error of a pair of outputs by controlling phase velocity for an even mode so that phase velocity for an even mode becomes equal to that for an odd mode. Thus, a balun circuit with wide operation band, and less error of amplitude difference and phase difference is obtained.

摘要翻译： 具有一对四分之一波长的耦合线的Marchand平衡 - 不平衡转换器通过在所述一对耦合线之间插入抵消元件来改善相互振幅和相反相位的信号的分频和/或组合。 所述消除元件可以是传输线，电容器或电感器，其通过控制偶模式的相位速度来改善一对输出的幅度差误差和相位差误差，使得偶模式的相速度等于 奇怪的模式。 因此，获得具有宽工作频带的平衡 - 不平衡转换电路，并且获得较小的幅度差和相位差的误差。

公开(公告)号：US5550068A

公开(公告)日：1996-08-27

申请号：US449277

申请日：1995-05-24

申请人： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

发明人： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

IPC分类号： H01L21/285 ,  H01L21/338 ,  H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L27/13 ,  H01L21/265

CPC分类号： H01L29/66863 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903

摘要： A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower circuit resistance and lower parasitic interactions; an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyimide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.

摘要翻译： 在微波信号传输的集成电路（IC）器件中，主动和无源器件的制造提出了新的设计理念。 高电路封装密度是理想的，但是现有的扁平扁平扁平导体的结构对实现这样的目的具有物理限制。 新的导体配置不仅克服了传统线路设计的电路封装问题，而且提供了性能参数的额外改进，例如较低的电路电阻和较低的寄生相互作用; 制造电路以设计规格并以低成本提高可靠性的能力。 新的概念已被应用于传输线，电容器，电感器，空气桥的制造以及制定FET的制造步骤。 聚酰亚胺膜能够在本发明中进行改进的制造步骤，并且还已经证明了用于聚酰亚胺材料的新的加工技术。

公开(公告)号：US5652157A

公开(公告)日：1997-07-29

申请号：US608520

申请日：1996-02-28

申请人： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

发明人： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

IPC分类号： H01L21/285 ,  H01L21/338 ,  H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L27/13 ,  H01L21/265

CPC分类号： H01L29/66863 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903

摘要： A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower resistance and lower parasitic interactions, an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyamide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.

摘要翻译： 在微波信号传输的集成电路（IC）器件中，主动和无源器件的制造提出了新的设计理念。 高电路封装密度是理想的，但是现有的扁平扁平扁平导体的结构对实现这样的目的具有物理限制。 新的导线配置不仅克服了传统线路设计的这种电路封装问题，而且提供了性能参数的额外改进，例如较低电阻和较低的寄生相互作用，制造电路以设计规格并以低成本提高可靠性的能力。 新的概念已被应用于传输线，电容器，电感器，空气桥的制造以及制定FET的制造步骤。 聚酰胺膜能够在本发明中进行改进的制造步骤，并且还已经证明了用于聚酰亚胺材料的新的加工技术。

公开(公告)号：US5639686A

公开(公告)日：1997-06-17

申请号：US133211

申请日：1993-10-07

申请人： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

发明人： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

IPC分类号： H01L21/285 ,  H01L21/338 ,  H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L27/13 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L29/66863 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903

摘要： A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower circuit resistance and lower parasitic interactions; an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyimide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.

摘要翻译： 在微波信号传输的集成电路（IC）器件中，主动和无源器件的制造提出了新的设计理念。 高电路封装密度是理想的，但是现有的扁平扁平扁平导体的结构对实现这样的目的具有物理限制。 新的导体配置不仅克服了传统线路设计的电路封装问题，而且提供了性能参数的额外改进，例如较低的电路电阻和较低的寄生相互作用; 制造电路以设计规格并以低成本提高可靠性的能力。 新的概念已被应用于传输线，电容器，电感器，空气桥的制造以及制定FET的制造步骤。 聚酰亚胺膜能够在本发明中进行改进的制造步骤，并且还已经证明了用于聚酰亚胺材料的新的加工技术。

公开(公告)号：US5281769A

公开(公告)日：1994-01-25

申请号：US787136

申请日：1991-11-04

申请人： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

发明人： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

IPC分类号： H01L21/285 ,  H01L21/338 ,  H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L27/13 ,  H05K1/00

CPC分类号： H01L29/66863 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903

摘要： A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower circuit resistance and lower parasitic interactions; an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyimide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.

摘要翻译： 在微波信号传输的集成电路（IC）器件中，主动和无源器件的制造提出了新的设计理念。 高电路封装密度是理想的，但是现有的扁平扁平扁平导体的结构对实现这样的目的具有物理限制。 新的导体配置不仅克服了传统线路设计的电路封装问题，而且提供了性能参数的额外改进，例如较低的电路电阻和较低的寄生相互作用; 制造电路以设计规格并以低成本提高可靠性的能力。 新的概念已被应用于传输线，电容器，电感器，空气桥的制造以及制定FET的制造步骤。 聚酰亚胺膜能够在本发明中进行改进的制造步骤，并且还已经证明了用于聚酰亚胺材料的新的加工技术。