Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer
    8.
    发明授权
    Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer 有权
    具有电阻调节层和薄膜插入层的磁阻效应元件

    公开(公告)号:US08085511B2

    公开(公告)日:2011-12-27

    申请号:US12236331

    申请日:2008-09-23

    IPC分类号: G11B5/39 H01L29/82

    摘要: A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni).

    摘要翻译: 磁阻效应元件包括磁阻效应膜,该磁阻效应膜包括具有磁性材料膜的磁性被钉扎层,该磁性材料膜的磁化方向基本上被固定在一个方向上;磁性层,具有响应于外部磁性的磁化方向变化的磁性材料膜 以及位于所述被钉扎层和所述自由层之间的非磁性金属中间层。 元件还包括电连接到磁阻效应膜的一对电极,以提供垂直于磁阻效应膜的膜平面的感测电流。 被钉扎层和自由层中的至少一个可以包括薄膜插入层。 非磁性金属中间层包括电阻调节层,其包含氧化物,氮化物和氟化物中的至少一种,薄膜插入层包括选自铁(Fe),钴(Co)和镍中的至少一种元素 (Ni)。

    Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element
    10.
    发明授权
    Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element 有权
    磁阻效应元件,磁头,磁记录/再现装置及制造磁阻效应元件的方法

    公开(公告)号:US08031443B2

    公开(公告)日:2011-10-04

    申请号:US12071589

    申请日:2008-02-22

    IPC分类号: G11B5/39

    摘要: A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.

    摘要翻译: 一种磁电阻效应元件,包括:第一磁化层,其一个方向上的磁化基本固定; 磁化根据外部磁场旋转的第二磁化层; 中间层,其包含绝缘部分和磁性金属部分,并且设置在第一磁性层和第二磁性层之间; 以及一对电极,其在垂直于由第一磁性层,中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。