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公开(公告)号：US06426584B2
公开(公告)日：2002-07-30
申请号：US09800929
申请日：2001-03-08
申请人： Kenji Yoshida , Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Kouji Murai , Masatsune Yamaguchi , Kenya Hashimoto , Tatsuya Ohmori
发明人： Kenji Yoshida , Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Kouji Murai , Masatsune Yamaguchi , Kenya Hashimoto , Tatsuya Ohmori
IPC分类号： H01L4108
CPC分类号： H03H9/02559 , H03H9/14538 , H03H9/25 , H03H9/643
摘要： In an elastic wave device, an electrode, which is formed in a comb-like shape and is made of conductive material having a prescribed thickness, is arranged on a substrate of a piezo-electric element containing lithium niobate as a main component. Also, in this elastic wave device, a surface of the substrate is set to a plane which is obtained by rotating a plane perpendicular to a crystal Y-axis of the lithium niobate by an angle ranging from 55 degrees to 57 degrees around a crystal x-axis of the lithium niobate, and a duty ratio (a width w of an electrode finger/an arrangement interval p of a pair of electrode fingers) of each of a plurality of electrode fingers composing the electrode is equal to or higher than 0.4 and is lower than 1.0.
摘要翻译： 在弹性波装置中，以含有铌酸锂为主要成分的压电元件的基板上配置形成为梳状形状的具有规定厚度的导电材料的电极。 此外，在该弹性波装置中，将基板的表面设定为通过使垂直于铌酸锂的晶体Y轴的平面旋转垂直于晶体x的55度至57度的角度而获得的平面 铌酸锂的ix轴和构成电极的多个电极指的各自的占空比（电极指的宽度w /一对电极指的排列间隔p）等于或高于0.4，并且 低于1.0。
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公开(公告)号：US06674215B1
公开(公告)日：2004-01-06
申请号：US09889392
申请日：2001-07-16
申请人： Kenji Yoshida , Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Kouji Murai , Masatsune Yamaguchi , Kenya Hashimoto , Tatsuya Ohmori , Koji Ibata
发明人： Kenji Yoshida , Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Kouji Murai , Masatsune Yamaguchi , Kenya Hashimoto , Tatsuya Ohmori , Koji Ibata
IPC分类号： H01L4104
CPC分类号： H03H9/02559
摘要： There is disclosed an acoustic wave apparatus, constructed in such a manner that a surface rotated in the range of 34° to 41° from a crystal Y axis around the crystal X axis of lithium tantalate is set as the surface of a substrate, a standardized electrode thickness (h/&lgr;) obtained by standardizing a thickness h of an electrode finger constituting at least a part of an interdigital transducer by a wavelength &lgr; of a surface acoustic wave is set to the range of 0.01 to 0.05, and a duty ratio (w/p) of the electrode finger decided based on a width w and an arraying cycle p of the electrode finger is set to the value ranging from 0.6 to just below 1.0.
摘要翻译： 公开了一种声波装置，其结构是将从钽酸锂的晶体X轴周围的晶体Y轴34°至41°范围内旋转的表面设定为基板表面，标准化 通过将构成至少一部分交叉指型换能器的电极指的厚度h通过声表面波的波长λ标准化得到的电极厚度（h /λ）设定为0.01〜0.05的范围，占空比 将基于电极指的宽度w和排列周期p决定的电极指的w / p设定为从0.6到刚刚低于1.0的值。
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公开(公告)号：US06586861B2
公开(公告)日：2003-07-01
申请号：US09892606
申请日：2001-06-28
申请人： Koichiro Misu , Kenji Yoshida , Koji Ibata , Shusou Wadaka , Tsutomu Nagatsuka , Fusaoki Uchikawa , Akira Yamada , Chisako Maeda
发明人： Koichiro Misu , Kenji Yoshida , Koji Ibata , Shusou Wadaka , Tsutomu Nagatsuka , Fusaoki Uchikawa , Akira Yamada , Chisako Maeda
IPC分类号： H01L41047
CPC分类号： H03H9/174 , H03H3/04 , H03H9/02133 , H03H9/02157 , H03H9/176 , H03H2003/0428
摘要： There is provided a film bulk acoustic wave device comprising: a silicon substrate 1, a dielectric film 21 including a silicon nitride 16 formed on the substrate 1 and a silicon oxide 2 on the silicon nitride 16, a bottom electrode 3 formed on the dielectric film 21, a piezoelectric film 17 formed on the bottom electrode 3, and a top electrode 5 formed on the piezoelectric film 17, wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate 1 which is opposite to a region including a part where the top electrode 5 exists is removed from the bottom surface of the silicon substrate 1 to a boundary surface with the silicon nitride 16.
摘要翻译： 本发明提供一种薄膜压电元件，其特征在于，具备硅基板1，在基板1上形成有氮化硅16的电介质膜21和在氮化硅16上形成的氧化硅2，在电介质膜上形成的底部电极3 如图21所示，形成在底部电极3上的压电膜17和形成在压电膜17上的顶部电极5，其中形成通孔，使得硅衬底1的与其相对的部分的厚度方向 到包括顶部电极5存在的部分的区域从硅衬底1的底表面去除到与氮化硅16的边界面的区域。
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公开(公告)号：US07196452B2
公开(公告)日：2007-03-27
申请号：US09778872
申请日：2001-02-08
IPC分类号： H01L41/08
CPC分类号： H03H9/564 , H03H3/04 , H03H9/0542 , H03H9/173 , H03H9/174 , H03H9/176 , H03H9/562 , Y10T29/42
摘要： The film acoustic wave devices (12a, 12b and 12c) having the same properties are obtained by changing at least one of the followings: the length and/or the width of upper electrode (18a and 18b); the distance between the upper electrodes (18a and 18b); the length and/or the width of connecting patterns (19a and 19b); areas of bonding pads (20a and 20b); and the pattern shape for the film acoustic wave device (12a and 12b) such as the area of capacitor electrode connected electrically to the bonding pads (20a and 20b); the property variations of film acoustic wave devices (12a, 12b and 12c) caused from the positioning at wafer 11 is compensated.
摘要翻译： 具有相同特性的薄膜声波装置（12a，12b和12c）通过改变上述电极（18a和18b）的长度和/或宽度中的至少一个来获得。 上部电极（18a和18b）之间的距离; 连接图案（21a和11b）的长度和/或宽度; 接合焊盘（20a和20b）的区域; 以及诸如与接合焊盘（20a和20b）电连接的电容器电极的面积的膜声波器件（12a和12b）的图案形状; 补偿了从晶片11的定位引起的薄膜声波器件（12a，12b和12c）的性能变化。
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公开(公告)号：US06963155B1
公开(公告)日：2005-11-08
申请号：US09202070
申请日：1997-04-24
CPC分类号： H03H9/564 , H03H3/04 , H03H9/0542 , H03H9/173 , H03H9/174 , H03H9/176 , H03H9/562 , Y10T29/42
摘要： A film acoustic wave device having similar properties are obtained by changing at least one of the length and/or the width of upper electrodes; the distance between the upper electrodes; the length and/or the width of connecting patterns; the areas of bonding pads; and the pattern shape for the film acoustic wave device such as the area of capacitor electrodes electrically connected to the bonding pads. Property variations of the film acoustic wave devices caused from the positioning at a wafer is compensated for.
摘要翻译： 通过改变上部电极的长度和/或宽度中的至少一个来获得具有相似特性的膜声波器件; 上电极之间的距离; 连接图案的长度和/或宽度; 焊盘区域; 以及诸如电连接到接合焊盘的电容器电极的面积的膜声波器件的图案形状。 由晶片定位引起的薄膜声波器件的性能变化得到补偿。
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公开(公告)号：US06396200B2
公开(公告)日：2002-05-28
申请号：US09381167
申请日：1999-09-16
申请人： Koichiro Misu , Tsutomu Nagatsuka , Shusou Wadaka
发明人： Koichiro Misu , Tsutomu Nagatsuka , Shusou Wadaka
IPC分类号： H01L4108
CPC分类号： H03H9/174 , H03H9/02133 , H03H9/177 , H03H9/562 , H03H9/564
摘要： A film bulk acoustic wave device, comprising: a substrate; a bottom electrode formed on one surface of the substrate; a piezoelectric film formed on the bottom electrode; and a first top electrode formed on the piezoelectric film, further comprises a second top electrode having a larger mass load than the first top electrode, and formed on the first top electrode on the piezoelectric film when viewed from the center of the first top electrode, wherein the piezoelectric film has a high-band-cut-off-type dispersion characteristic. The cut-off frequency of a second top electrode portion piezoelectric film having a large mass load can be lower than the cut-off frequency of a first top electrode portion piezoelectric film, to thereby trap the energy of the acoustic wave in a region of the first top electrode portion side, so that good performance may be feasible.
摘要翻译： 一种薄膜体声波装置，包括：基板; 形成在所述基板的一个表面上的底部电极; 形成在底部电极上的压电膜; 以及形成在所述压电膜上的第一顶部电极，还包括具有比所述第一顶部电极大的质量负载的第二顶部电极，并且当从所述第一顶部电极的中心观察时，形成在所述压电膜上的所述第一顶部电极上， 其中压电薄膜具有高截止型色散特性。具有大质量负载的第二顶部电极部分压电薄膜的截止频率可以低于第一顶部电极的截止频率 从而将声波的能量捕获在第一顶部电极部分侧的区域中，使得良好的性能可能是可行的。
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公开(公告)号：US5789845A
公开(公告)日：1998-08-04
申请号：US559706
申请日：1995-11-15
申请人： Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Tomonori Kimura , Shunpei Kameyama , Chisako Maeda , Akira Yamada , Toshihisa Honda
发明人： Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Tomonori Kimura , Shunpei Kameyama , Chisako Maeda , Akira Yamada , Toshihisa Honda
CPC分类号： H03H9/174 , H03B5/326 , H03F3/195 , H03H9/02228 , H03H9/0542 , H03H9/173 , H03H9/176 , H03H2003/0464
摘要： Embodiments of the present invention provide a small and well-characterized bulk acoustic wave device by fabricating a filter having a wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit. In embodiments of the present invention, a bulk acoustic wave device comprises a semiconductor substrate having a dielectric substance layer thereon, the dielectric substance layer has a ground conductor layer thereon, the ground conductor layer has a piezoelectric ceramic thin film thereon and the piezoelectric ceramic thin film has a conductive electrode pattern thereon. The thickness of the piezoelectric ceramic thin film is more than ten times the thickness of the ground conductor layer, and the wave number of acoustic waves that propagate in a direction parallel to a surface of the piezoelectric ceramic thin film multiplied by the thickness of the piezoelectric ceramic thin film is less than 2.
摘要翻译： 本发明的实施例通过制造具有宽带宽的滤波器或具有宽的振荡频率范围的谐振器以及半导体电路来提供小型且良好表征的体声波器件。 在本发明的实施例中，体声波装置包括其上具有电介质层的半导体衬底，电介质层上具有接地导体层，接地导体层上具有压电陶瓷薄膜，压电陶瓷薄片 膜上具有导电电极图案。 压电陶瓷薄膜的厚度是接地导体层的厚度的十倍以上，并且在与压电陶瓷薄膜的表面平行的方向上传播的声波的波数乘以压电陶瓷薄膜的厚度 陶瓷薄膜小于2。
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公开(公告)号：US5272923A
公开(公告)日：1993-12-28
申请号：US691063
申请日：1991-04-23
CPC分类号： G01N29/42 , G01N29/11 , G01N29/341 , G01N29/40 , G01N29/46 , G01N29/50 , G01N2291/044
摘要： An inspection apparatus utilizing a pulse compression technique is described which comprises a signal generator, a transmission/reception probe; first and second correlators and an adder. The signal generator generates a composite transmission signal consisting of signals Sap(t), Saq(t), Sbp(t) and Sbq(t) respectively based on a basic unit signal ga(t) and a sequence {p}, the signal ga(t) and a sequence {q}, a basic unit signal gb(t) and the sequence {p}, and the signal gb(t) and the sequence {q}, to the probe to transmit the composite transmission signal to a target. The first correlator performs a correlation operation of echo signals Rap(t), Raq(t), Rbp(t) and Rbq(t) corresponding to the signal Sap(t), Saq(t) and Sbq(t) by utilizing reference signals Ua(t) and Ub(t) based on the sequences to provide results Caap(t), Caaq(t), Cbbp(t) and Cbbq(t). The second correlator performs a correlation operation of the results Caap(t), Caaq(t) Cbbp(t) and Cbbq(t) by utilizing the sequences {p} and {q} to provide compressed pulses Caapp(t), Caaqq(t), Cbbpp(t) and Cbbqq(t). These pulses are summed up at the adder to provide a composite compressed pulse C having the large amplitude main lobe and small amplitude side lobes.
摘要翻译： 描述了利用脉冲压缩技术的检查装置，其包括信号发生器，发送/接收探头， 第一和第二相关器和加法器。 信号发生器基于基本单位信号ga（t）和序列{p}分别产生由信号Sap（t），Saq（t），Sbp（t）和Sbq（t）组成的复合传输信号， ga（t）和序列{q}，基本单位信号gb（t）和序列{p}以及信号gb（t）和序列{q}到探头以将复合传输信号发送到 一个目标。 第一相关器通过利用参考信号对与信号Sap（t），Saq（t）和Sbq（t）相对应的回波信号Rap（t），Raq（t），Rbp（t）和Rbq（t）进行相关运算 基于序列提供信号Ua（t）和Ub（t），以提供结果Caap（t），Caaq（t），Cbbp（t）和Cbbq（t）。 第二相关器通过利用序列{p}和{q}来执行结果Caap（t），Caaq（t）Cbbp（t）和Cbbq（t）的相关运算，以提供压缩脉冲Caapp（t），Caaqq t），Cbbpp（t）和Cbbqq（t）。 这些脉冲在加法器处相加，以提供具有大振幅主瓣和小振幅旁瓣的复合压缩脉冲C.
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公开(公告)号：US5942688A
公开(公告)日：1999-08-24
申请号：US937244
申请日：1997-09-08
IPC分类号： G01B15/00 , G01B17/00 , G01B17/06 , G01B21/00 , G01N29/00 , G01N29/34 , G01N29/42 , G01N29/44 , G01S7/524 , G01S15/10
CPC分类号： G01N29/348 , G01N29/42 , G01N2291/011 , G01N2291/012 , G01N2291/02854 , G01N2291/044
摘要： A detecting device for detecting a physical quantity of an object, which includes a transmission signals generating device for generating first and second transmission signals of different frequencies, an ultrasonic wave transmission device that is excited by the first and the second transmission signal, for transmitting ultrasonic pulses corresponding to the first and the second transmission signal to an object, and a signal processing device for carrying out a signal processing process on the first and the second echo. The signal processing process is such that it detects phases of the first and second echo corresponding to the first and second transmission signal, which are received by the ultrasonic wave receiving device. An indeterminacy integer times as large as 2.pi. of the phase of each of the first and second echo is determined on the basis of the information of the amplitudes of the first or the second echo, and a distance from the ultrasonic wave transmission device through an object to the ultrasonic wave receiving device along an ultrasonic wave propagating path is detected on the basis of the determined phase of the first or second echo.
摘要翻译： 一种用于检测物体的物理量的检测装置，包括用于产生不同频率的第一和第二传输信号的传输信号产生装置，由第一和第二传输信号激发的超声波传输装置，用于发射超声波 对应于第一和第二传输信号的脉冲的对象;以及用于对第一和第二回波进行信号处理处理的信号处理装置。 信号处理处理使得它检测由超声波接收装置接收的对应于第一和第二传输信号的第一和第二回波的相位。 基于第一或第二回波的振幅的信息以及与超声波发送装置的距离通过第一回波和第二回波的距离的信息来确定第一和第二回波中的每一个的相位的2π的整数倍的不确定度 基于确定的第一或第二回波的相位来检测沿着超声波传播路径对超声波接收装置的物体。
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公开(公告)号：US5203823A
公开(公告)日：1993-04-20
申请号：US486006
申请日：1990-02-27
IPC分类号： G01N29/06 , G01N29/07 , G01N29/11 , G01N29/30 , G01N29/34 , G01N29/40 , G01N29/44 , G01N29/46 , G01N29/50
CPC分类号： G01N29/50 , G01N29/0609 , G01N29/07 , G01N29/11 , G01N29/30 , G01N29/343 , G01N29/348 , G01N29/40 , G01N29/4436 , G01N29/4445 , G01N29/46 , G01N2291/044 , Y10S367/905
摘要： An ultrasonic non-destructive inspecting apparatus is constructed to comprise a transmission signal generator, an ultrasonic probe, a correlator and an adder wherein a transmission signal based on a sequence is generated and transmitted to a specimen, its echo is correlation processed with an appropriate reference signal, and the results of the correlation processes are summed to judge a reflection matter within the specimen.
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