MOS-type solid state imaging device with high sensitivity
    2.
    发明授权
    MOS-type solid state imaging device with high sensitivity 失效
    高灵敏度的MOS型固态成像装置

    公开(公告)号:US06674470B1

    公开(公告)日:2004-01-06

    申请号:US08933975

    申请日:1997-09-19

    IPC分类号: H04N314

    摘要: A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

    摘要翻译: 固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。 每个单电池包括光电转换器,用于读取来自光电转换器的信号的MOS型读出晶体管,MOS型放大晶体管,其栅极连接到读出晶体管的漏极,并用于放大 由读出晶体管读取的信号,复位晶体管,其源极连接到读出晶体管的漏极,并用于复位放大晶体管的栅极的电位;以及寻址元件,串联连接到放大晶体管, 用于选择单元格。 读出晶体管形成在半导体衬底中的第一器件区域中。 复位晶体管形成在半导体衬底中的第二器件区域中。 读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

    Back-illuminated type solid-state imaging device and method of manufacturing the same
    4.
    发明授权
    Back-illuminated type solid-state imaging device and method of manufacturing the same 有权
    背照式固体摄像装置及其制造方法

    公开(公告)号:US08716822B2

    公开(公告)日:2014-05-06

    申请号:US13363801

    申请日:2012-02-01

    IPC分类号: H01L31/0232

    摘要: A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.

    摘要翻译: 根据实施例的固态成像装置包括:布置在第一半导体层的第一面上的多个像素,每个像素包括光电转换元件,其转换通过第一半导体层的第二面进入的光 所述光电转换元件具有形成在所述第一面上形成的第一半导体区域的pn结,以及形成在所述第一半导体区域的表面上的第二半导体区域; 像素分离区域,彼此分离并形成在像素之间,每个像素分隔区域包括覆盖与光电转换元件接触的面的第二半导体层,以及折射率低于折射率的绝缘膜 第二半导体层覆盖第二半导体层。

    SOLID-STATE IMAGING DEVICE
    5.
    发明申请
    SOLID-STATE IMAGING DEVICE 失效
    固态成像装置

    公开(公告)号:US20110175187A1

    公开(公告)日:2011-07-21

    申请号:US12875534

    申请日:2010-09-03

    IPC分类号: H01L27/146

    摘要: Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.

    摘要翻译: 某些实施例提供了一种固态成像装置,包括:光电转换单元,其包括设置在第一导电类型的半导体衬底上的第二导电类型的半导体层,将入射到半导体衬底的第一表面的入射光转换为信号电荷 ,并存储信号费用; 读出由光电转换单元存储的信号电荷的读出电路; 设置在半导体衬底的第一表面上以覆盖光电转换单元的半导体层的抗反射结构包括:固定电荷膜,其保持作为非信号电荷的固定电荷,并防止入射光的反射; 以及设置在光电转换单元和抗反射结构之间的孔存储区域,并且存储非信号电荷的空穴。

    SOLID-STATE IMAGING DEVICE
    6.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置

    公开(公告)号:US20110155890A1

    公开(公告)日:2011-06-30

    申请号:US12958873

    申请日:2010-12-02

    IPC分类号: H01L27/146

    摘要: According to one embodiments, a pixel array unit in which pixels PC are arranged in a matrix manner, a sample-and-hold signal conversion circuit that detects a signal component of each of the pixels PC in a CDS, and a timing control circuit that controls to sample a reference level of an analog CDS after a reference level of a digital CDS is converted into a digital value are included.

    摘要翻译: 根据一个实施例,其中以矩阵方式布置像素PC的像素阵列单元,检测CDS中的每个像素PC的信号分量的采样保持信号转换电路和定时控制电路,其中, 包括在将数字CDS的参考电平转换为数字值之后,对模拟CDS的参考电平进行采样的控制。

    Infrared sensor, infrared camera, method of driving infrared sensor, and method of driving infrared camera
    7.
    发明授权
    Infrared sensor, infrared camera, method of driving infrared sensor, and method of driving infrared camera 有权
    红外传感器,红外摄像机,红外线传感器的驱动方法以及红外摄像机的驱动方法

    公开(公告)号:US07361899B2

    公开(公告)日:2008-04-22

    申请号:US11532771

    申请日:2006-09-18

    申请人: Yoshinori Iida

    发明人: Yoshinori Iida

    IPC分类号: G01J5/20 H01L27/14 H01L31/00

    摘要: An infrared sensor includes an imaging area including infrared detection pixels; row selection lines; a signal line; a row selection circuit generating a column voltage in the signal line; a column amplifier including a first amplifying transistor which generates an amplification voltage obtained by amplifying the column voltage and a first clamp circuit which holds threshold voltage information of the first amplifying transistor in its gate; a removing circuit including a second amplifying transistor and a second clamp circuit which holds threshold voltage information of the second amplifying transistor in its gate, the removing circuit being connected to the column amplifier to remove a bias component from the amplification voltage; and a reading circuit reading an output voltage from the column amplifier, the output voltage is obtained by excluding at least the bias component from the amplification voltage.

    摘要翻译: 红外线传感器包括:包含红外线检测像素的摄像区域; 行选择行; 信号线 在所述信号线中产生列电压的行选择电路; 列放大器,包括产生通过放大列电压而获得的放大电压的第一放大晶体管和保持其栅极中第一放大晶体管的阈值电压信息的第一钳位电路; 去除电路,包括第二放大晶体管和第二钳位电路,其在其栅极中保持第二放大晶体管的阈值电压信息,去除电路连接到列放大器以从放大电压去除偏置分量; 以及从列放大器读取输出电压的读取电路,通过从放大电压中至少排除偏置分量来获得输出电压。

    INFRARED SENSOR, INFRARED CAMERA, METHOD OF DRIVING INFRARED SENSOR, AND METHOD OF DRIVING INFRARED CAMERA
    8.
    发明申请
    INFRARED SENSOR, INFRARED CAMERA, METHOD OF DRIVING INFRARED SENSOR, AND METHOD OF DRIVING INFRARED CAMERA 有权
    红外传感器,红外摄像机,驱动红外传感器的方法和驱动红外摄像机的方法

    公开(公告)号:US20070145274A1

    公开(公告)日:2007-06-28

    申请号:US11532771

    申请日:2006-09-18

    申请人: Yoshinori Iida

    发明人: Yoshinori Iida

    摘要: An infrared sensor includes an imaging area including infrared detection pixels; row selection lines; a signal line; a row selection circuit generating a column voltage in the signal line; a column amplifier including a first amplifying transistor which generates an amplification voltage obtained by amplifying the column voltage and a first clamp circuit which holds threshold voltage information of the first amplifying transistor in its gate; a removing circuit including a second amplifying transistor and a second clamp circuit which holds threshold voltage information of the second amplifying transistor in its gate, the removing circuit being connected to the column amplifier to remove a bias component from the amplification voltage; and a reading circuit reading an output voltage from the column amplifier, the output voltage is obtained by excluding at least the bias component from the amplification voltage.

    摘要翻译: 红外线传感器包括:包含红外线检测像素的摄像区域; 行选择行; 信号线 在所述信号线中产生列电压的行选择电路; 列放大器,包括产生通过放大列电压而获得的放大电压的第一放大晶体管和保持其栅极中第一放大晶体管的阈值电压信息的第一钳位电路; 去除电路,包括第二放大晶体管和第二钳位电路,其在其栅极中保持第二放大晶体管的阈值电压信息,去除电路连接到列放大器以从放大电压去除偏置分量; 以及从列放大器读取输出电压的读取电路,通过从放大电压中至少排除偏置分量来获得输出电压。