公开(公告)号：US4895107A

公开(公告)日：1990-01-23

申请号：US215175

申请日：1988-07-05

申请人： Kensaku Yano ,  Akihiko Furukawa ,  Ryohei Miyagawa ,  Yoshinori Iida

发明人： Kensaku Yano ,  Akihiko Furukawa ,  Ryohei Miyagawa ,  Yoshinori Iida

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/48 ,  C23C16/54 ,  H01L21/263 ,  H01L21/31

CPC分类号： C23C16/4409 ,  C23C16/482 ,  C23C16/488 ,  C23C16/54

摘要： A photo chemical reaction apparatus comprises a vacuum container partitioned into a reaction chamber and a carrier chamber by use of partition board. The partition board has an opening into which a carrier tray can be detachably inserted so as to cause the rection chamber to be hermetically sealed. The carrier tray has a substrate holder opposite to a light-penetrating window. A reaction gas flows between this window and a substrate to be processed mounted on the substrate holder.

摘要翻译： 光化学反应装置包括使用分隔板分隔成反应室的真空容器和载体室。 隔板具有开口，承载托盘可以可拆卸地插入该开口中，以使得反作用气室被密封。 托盘具有与透光窗相对的基板保持架。 反应气体在该窗口和待加工的基板之间流动，安装在基板保持器上。

公开(公告)号：US5527417A

公开(公告)日：1996-06-18

申请号：US446290

申请日：1995-05-22

申请人： Yoshinori Iida ,  Akihiko Furukawa ,  Tetsuya Yamaguchi ,  Michio Sasaki ,  Hisanori Ihara ,  Hidetoshi Nozaki ,  Takaaki Kamimura

发明人： Yoshinori Iida ,  Akihiko Furukawa ,  Tetsuya Yamaguchi ,  Michio Sasaki ,  Hisanori Ihara ,  Hidetoshi Nozaki ,  Takaaki Kamimura

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/48 ,  C23F1/02

CPC分类号： C23C16/4405 ,  C23C16/482 ,  C23C16/488

摘要： A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.

摘要翻译： 一种光辅助CVD装置，包括用于存储基板的反应室，用于将源气体供给到反应室中的入口端口，用于在进入反应室的源气体上照射光的光源，以在辐射时分解源气体 由此在基板上沉积膜，将用于向反应室供给蚀刻气体的入口端口和放电电极，该放电电极布置在基板上方并且具有围绕基板上方的空间的激励蚀刻气体 。

公开(公告)号：US09224860B2

公开(公告)日：2015-12-29

申请号：US13992574

申请日：2011-12-05

申请人： Yasuhiro Kagawa ,  Akihiko Furukawa ,  Shiro Hino ,  Hiroshi Watanabe ,  Masayuki Imaizumi

发明人： Yasuhiro Kagawa ,  Akihiko Furukawa ,  Shiro Hino ,  Hiroshi Watanabe ,  Masayuki Imaizumi

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/739 ,  H01L29/16 ,  H01L29/20 ,  H01L29/423

CPC分类号： H01L29/063 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/6631 ,  H01L29/66348 ,  H01L29/66522 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

摘要： A trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device includes a gate electrode embedded into a trench penetrating a base region. The gate electrode is disposed into a lattice shape in a planar view, and a protective diffusion layer is formed in a drift layer at the portion underlying thereof. At least one of blocks divided by the gate electrode is a protective contact region on which the trench is entirely formed. A protective contact for connecting the protective diffusion layer at a bottom portion of the trench and a source electrode is disposed on the protective contact region.

摘要翻译： 一种沟槽栅型半导体器件，其可以防止在关断时在栅电极下方的沟槽部分流入保护扩散层的位移电流引起的栅极绝缘膜的破坏，并且同时通过 缩小细胞间距 半导体器件包括嵌入到穿透基极区域的沟槽中的栅电极。 栅电极在平面图中设置为格子状，并且在其下方的部分的漂移层中形成保护扩散层。 由栅电极分隔的至少一个块是其上完全形成沟槽的保护接触区域。 用于在沟槽的底部连接保护性扩散层和源电极的保护接点设置在保护接触区域上。

公开(公告)号：US20150108564A1

公开(公告)日：2015-04-23

申请号：US14400025

申请日：2013-03-12

申请人： Naruhisa Miura ,  Shiro Hino ,  Akihiko Furukawa ,  Yuji Abe ,  Shuhei Nakata ,  Masayuki Imaizumi ,  Yasuhiro Kagawa

发明人： Naruhisa Miura ,  Shiro Hino ,  Akihiko Furukawa ,  Yuji Abe ,  Shuhei Nakata ,  Masayuki Imaizumi ,  Yasuhiro Kagawa

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/423 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/086 ,  H01L29/1033 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/42356 ,  H01L29/66068 ,  H01L29/66893 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/7836 ,  H01L29/8083

摘要： A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the source contact region. These three regions are connected in series between the source pad and the channel region in the well region.

摘要翻译： MOSFET的源极区域包括：源极接触区域，连接到源极焊盘; 源极延伸区域，其邻近阱区域中的沟道区域; 以及源极电阻控制区域，其布置在源极延伸区域和源极接触区域之间。 源极电阻控制区域与源极延伸区域和源极接触区域的杂质浓度不同。 这三个区域串联连接在源极区和阱区中的沟道区之间。

公开(公告)号：US09006819B2

公开(公告)日：2015-04-14

申请号：US13639738

申请日：2011-02-08

申请人： Shiro Hino ,  Naruhisa Miura ,  Shuhei Nakata ,  Kenichi Ohtsuka ,  Shoyu Watanabe ,  Akihiko Furukawa ,  Yukiyasu Nakao ,  Masayuki Imaizumi

发明人： Shiro Hino ,  Naruhisa Miura ,  Shuhei Nakata ,  Kenichi Ohtsuka ,  Shoyu Watanabe ,  Akihiko Furukawa ,  Yukiyasu Nakao ,  Masayuki Imaizumi

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/78 ,  H01L29/861 ,  H01L29/06 ,  H01L29/16 ,  H01L29/40 ,  H01L29/423 ,  H01L29/739

CPC分类号： H01L29/1095 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/402 ,  H01L29/42372 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7805 ,  H01L29/7811 ,  H01L29/8611

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of the drift layer, and a source pad for electrically connecting the second well regions and a source region of the cell region through a first well contact hole provided to penetrate a gate insulating film on the second well region, a second well contact hole provided to penetrate a field insulating film on the second well region and a source contact hole.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，形成在半导体衬底的第一主表面上的第一导电类型的漂移层，形成为围绕电池的第二导电类型的第二阱区域 漂移层的区域和用于通过设置成穿过第二阱区域上的栅极绝缘膜设置的第一阱接触孔电连接第二阱区域和电池区域的源极区域的源极焊盘，提供第二阱接触孔 以穿透第二阱区域上的场绝缘膜和源极接触孔。

公开(公告)号：US20140203393A1

公开(公告)日：2014-07-24

申请号：US14239375

申请日：2012-07-31

申请人： Tsuyoshi Kawakami ,  Yoshiyuki Nakaki ,  Yoshio Fujii ,  Hiroshi Watanabe ,  Shuhei Nakata ,  Kohei Ebihara ,  Akihiko Furukawa

发明人： Tsuyoshi Kawakami ,  Yoshiyuki Nakaki ,  Yoshio Fujii ,  Hiroshi Watanabe ,  Shuhei Nakata ,  Kohei Ebihara ,  Akihiko Furukawa

IPC分类号： H01L29/872

CPC分类号： H01L29/8725 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/8611 ,  H01L29/872

摘要： A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.

摘要翻译： 具有高击穿电压和高可靠性的半导体器件，而不形成具有高定位精度的嵌入式注入层。 半导体器件包括形成在第一导电类型的半导体层的表面层上的第二导电类型的有源区的基底，以构成半导体元件; 保护环作为多个第一导电类型的第一杂质区域，形成在半导体层的表面层上彼此间隔开以在平面图中分别包围基底; 以及作为第二导电类型的第二杂质区域的嵌入式注入层，其嵌入在半导体层的表面层中，以连接多个保护环的至少两个底部。

公开(公告)号：US20130285140A1

公开(公告)日：2013-10-31

申请号：US13992574

申请日：2011-12-05

申请人： Yasuhiro Kagawa ,  Akihiko Furukawa ,  Shiro Hino ,  Hiroshi Watanabe ,  Masayuki Imaizumi

发明人： Yasuhiro Kagawa ,  Akihiko Furukawa ,  Shiro Hino ,  Hiroshi Watanabe ,  Masayuki Imaizumi

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/063 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/6631 ,  H01L29/66348 ,  H01L29/66522 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

摘要： A trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device includes a gate electrode embedded into a trench penetrating a base region. The gate electrode is disposed into a lattice shape in a planar view, and a protective diffusion layer is formed in a drift layer at the portion underlying thereof. At least one of blocks divided by the gate electrode is a protective contact region on which the trench is entirely formed. A protective contact for connecting the protective diffusion layer at a bottom portion of the trench and a source electrode is disposed on the protective contact region.

摘要翻译： 一种沟槽栅型半导体器件，其可以防止在关断时在栅电极下方的沟槽部分流入保护扩散层的位移电流引起的栅极绝缘膜的破坏，并且同时通过 缩小细胞间距 半导体器件包括嵌入到穿透基极区域的沟槽中的栅电极。 栅电极在平面图中设置为格子状，并且在其下方的部分的漂移层中形成保护扩散层。 由栅电极分隔的至少一个块是其上完全形成沟槽的保护接触区域。 用于在沟槽的底部连接保护性扩散层和源电极的保护接点设置在保护接触区域上。

公开(公告)号：US20130153900A1

公开(公告)日：2013-06-20

申请号：US13818993

申请日：2011-08-26

申请人： Shinichi Kinouchi ,  Hiroshi Nakatake ,  Yuji Ebiike ,  Akihiko Furukawa ,  Masayuki Imaizumi

发明人： Shinichi Kinouchi ,  Hiroshi Nakatake ,  Yuji Ebiike ,  Akihiko Furukawa ,  Masayuki Imaizumi

IPC分类号： H01L23/34

CPC分类号： H01L23/34 ,  G01K7/01 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7803 ,  H01L29/7815 ,  H01L29/7828 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device capable of rapidly and accurately sensing the information regarding the temperature of a semiconductor transistor contained therein. A MOSFET includes a plurality of cells, and includes a main cell group including a cell for supplying a current to a load among the plurality of cells, and a sense cell group including a cell for sensing temperature information regarding the temperature of the MOSFET thereamong. The main cell group and the sense cell group have different temperature characteristics showing changes in electrical characteristics to changes in temperature. A temperature sensing circuit senses the temperature of the MOSFET based on, for example, a value of a main current flowing through the main cell group and a value of a sense current flowing through the sense cell group.

摘要翻译： 一种半导体器件，其能够快速且准确地感测关于其中包含的半导体晶体管的温度的信息。 MOSFET包括多个单元，并且包括主单元组，其包括用于向多个单元之间的负载提供电流的单元，以及包括用于感测关于MOSFET的温度的温度信息的单元的感测单元组。 主电池组和感应电池组具有不同的温度特性，显示电特性随温度变化的变化。 温度检测电路基于例如流过主单元组的主电流的值和流过感测单元组的感测电流的值来感测MOSFET的温度。

公开(公告)号：US6110291A

公开(公告)日：2000-08-29

申请号：US689313

申请日：1996-08-07

申请人： Kenyu Haruta ,  Koichi Ono ,  Hitoshi Wakata ,  Mutsumi Tsuda ,  Yoshio Saito ,  Keisuke Nanba ,  Kazuyoshi Kojima ,  Tetsuya Takami ,  Akihiro Suzuki ,  Tomohiro Sasagawa ,  Kenichi Kuroda ,  Toshiyuki Oishi ,  Yukihiko Wada ,  Akihiko Furukawa ,  Yasuji Matsui ,  Akimasa Yuki ,  Takaaki Kawahara ,  Hideki Yabe ,  Taisuke Furukawa ,  Kouji Kise ,  Noboru Mikami ,  Tsuyoshi Horikawa ,  Tetsuo Makita ,  Kazuo Kuramoto ,  Naohiko Fujino ,  Hiroshi Kuroki ,  Tetsuo Ogama ,  Junji Tanimura

发明人： Kenyu Haruta ,  Koichi Ono ,  Hitoshi Wakata ,  Mutsumi Tsuda ,  Yoshio Saito ,  Keisuke Nanba ,  Kazuyoshi Kojima ,  Tetsuya Takami ,  Akihiro Suzuki ,  Tomohiro Sasagawa ,  Kenichi Kuroda ,  Toshiyuki Oishi ,  Yukihiko Wada ,  Akihiko Furukawa ,  Yasuji Matsui ,  Akimasa Yuki ,  Takaaki Kawahara ,  Hideki Yabe ,  Taisuke Furukawa ,  Kouji Kise ,  Noboru Mikami ,  Tsuyoshi Horikawa ,  Tetsuo Makita ,  Kazuo Kuramoto ,  Naohiko Fujino ,  Hiroshi Kuroki ,  Tetsuo Ogama ,  Junji Tanimura

IPC分类号： C23C14/02 ,  C23C14/08 ,  C23C14/22 ,  C23C14/28 ,  C23C14/34 ,  C23C14/54 ,  C23C14/56 ,  C23C14/00

CPC分类号： C23C14/087 ,  C23C14/022 ,  C23C14/22 ,  C23C14/28 ,  C23C14/3471 ,  C23C14/54 ,  C23C14/541 ,  C23C14/547 ,  C23C14/564 ,  Y10S505/732

摘要： A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

公开(公告)号：US09536942B2

公开(公告)日：2017-01-03

申请号：US14363914

申请日：2012-08-02

申请人： Tsuyoshi Kawakami ,  Kenji Hamada ,  Kohei Ebihara ,  Akihiko Furukawa ,  Yuji Murakami

发明人： Tsuyoshi Kawakami ,  Kenji Hamada ,  Kohei Ebihara ,  Akihiko Furukawa ,  Yuji Murakami

IPC分类号： H01L21/266 ,  H01L29/78 ,  H01L29/872 ,  H01L29/06 ,  H01L29/861 ,  H01L29/66 ,  H01L29/08 ,  H01L29/16 ,  H01L29/423

CPC分类号： H01L29/063 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66659 ,  H01L29/7835 ,  H01L29/8611 ,  H01L29/872

摘要： A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, the first electric field relaxation layer and the second electric field relaxation layer adjacent to each other forming a set. Impurities of a second conductivity type are implanted to the first electric field relaxation layers at a first surface density, widths of which becoming smaller as apart from the active region. Impurities of the second conductivity type are implanted to the second electric field relaxation layers at a second surface density lower than the first surface density, widths of which becoming larger as apart from the active region.

摘要翻译： 半导体器件包括形成在第一导电类型的半导体层的上层部分中的有源区和从有源区的边缘朝向外部设置以围绕有源区的多个电场弛豫层。 多个电场弛豫层包括彼此相邻交替设置的多个第一电场弛豫层和多个第二电场弛豫层，第一电场弛豫层和彼此相邻的第二电场弛豫层形成 一套。 第二导电类型的杂质以第一表面密度注入第一电场弛豫层，其宽度随着活性区域的变小而变小。 第二导电类型的杂质以比第一表面密度低的第二表面密度注入第二电场弛豫层，其宽度随着活性区域的变大而变大。