公开(公告)号：US20120299084A1

公开(公告)日：2012-11-29

申请号：US13476356

申请日：2012-05-21

申请人： Kentaro SAITO ,  Kazumasa YANAGISAWA ,  Yasushi ISHII ,  Koichi TOBA

发明人： Kentaro SAITO ,  Kazumasa YANAGISAWA ,  Yasushi ISHII ,  Koichi TOBA

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/11573 ,  H01L29/4234 ,  H01L29/66833

摘要： To improve the electric performance and reliability of a semiconductor device. A memory gate electrode of a split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 6a and a silicon film 6b over the metal film 6a. In an upper end part of the metal film 6a, a metal oxide portion 17 is formed by oxidation of a part of the metal film 6a. A control gate electrode of the split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 4a and the silicon film 4b over the metal film 4a.

摘要翻译： 提高半导体器件的电气性能和可靠性。 分闸式非易失性存储器的存储栅极是由金属膜6a上的金属膜6a和硅膜6b的叠层膜形成的金属栅电极。 在金属膜6a的上端部分，通过氧化金属膜6a的一部分而形成金属氧化物部分17。 分闸式非易失性存储器的控制栅电极是由金属膜4a的叠层膜和金属膜4a上的硅膜4b形成的金属栅电极。

公开(公告)号：US20110008943A1

公开(公告)日：2011-01-13

申请号：US12885086

申请日：2010-09-17

申请人： Koichi TOBA ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Takashi Hashimoto ,  Kosuke Okuyama

发明人： Koichi TOBA ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Takashi Hashimoto ,  Kosuke Okuyama

IPC分类号： H01L21/8239

CPC分类号： H01L27/115 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/42344 ,  H01L29/792

摘要： The present invention provides a technology capable of reducing an area occupied by a nonvolatile memory while improving the reliability of the nonvolatile memory. In a semiconductor device, the structure of a code flash memory cell is differentiated from that of a data flash memory cell. More specifically, in the code flash memory cell, a memory gate electrode is formed only over the side surface on one side of a control gate electrode to improve a reading speed. In the data flash memory cell, on the other hand, a memory gate electrode is formed over the side surfaces on both sides of a control gate electrode. By using a multivalued memory cell instead of a binary memory cell, the resulting data flash memory cell can have improved reliability while preventing deterioration of retention properties and reduce its area.

摘要翻译： 本发明提供一种能够在提高非易失性存储器的可靠性的同时减少由非易失性存储器占据的面积的技术。 在半导体器件中，代码闪存单元的结构与数据闪存单元的结构不同。 更具体地，在代码闪速存储单元中，仅在控制栅电极的一侧的侧面上形成存储栅电极，以提高读取速度。 另一方面，在数据闪存单元中，在控制栅电极的两侧的侧面上形成存储栅电极。 通过使用多值存储单元而不是二进制存储单元，所得到的数据闪存单元可以提高可靠性，同时防止保留性能的劣化并减小其面积。

公开(公告)号：US20100264479A1

公开(公告)日：2010-10-21

申请号：US12825147

申请日：2010-06-28

申请人： Koichi TOBA ,  Yasushi ISHII ,  Yoshiyuki KAWASHIMA ,  Satoru MACHIDA ,  Munekatsu NAKAGAWA ,  Takashi HASHIMOTO

发明人： Koichi TOBA ,  Yasushi ISHII ,  Yoshiyuki KAWASHIMA ,  Satoru MACHIDA ,  Munekatsu NAKAGAWA ,  Takashi HASHIMOTO

IPC分类号： H01L27/115 ,  H01L29/792

CPC分类号： H01L29/7885 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328

摘要： Provided is a semiconductor device having, over a semiconductor substrate, a control gate electrode and a memory gate electrode which are adjacent to each other and constitute a nonvolatile memory. The height of the memory gate electrode is lower than the height of the control gate electrode. A metal silicide film is formed over the upper surface of the control gate electrode, but not formed over the upper surface of the memory gate electrode. The memory gate electrode has, over the upper surface thereof, a sidewall insulating film made of silicon oxide. This sidewall insulating film is formed in the same step as that for the formation of respective sidewall insulating films over the sidewalls of the memory gate electrode and the control gate electrode. The present invention makes it possible to improve the production yield and performance of the semiconductor device having a nonvolatile memory.

摘要翻译： 提供了一种在半导体衬底上具有彼此相邻并构成非易失性存储器的控制栅电极和存储栅电极的半导体器件。 存储栅电极的高度低于控制栅电极的高度。 在控制栅电极的上表面上形成金属硅化物膜，但不形成在存储栅电极的上表面上。 存储栅电极在其上表面上具有由氧化硅制成的侧壁绝缘膜。 该侧壁绝缘膜以与用于在存储栅电极和控制栅电极的侧壁上形成各个侧壁绝缘膜的步骤相同的步骤形成。 本发明使得可以提高具有非易失性存储器的半导体器件的生产率和性能。

公开(公告)号：US20090095995A1

公开(公告)日：2009-04-16

申请号：US12239807

申请日：2008-09-28

申请人： Yoshiyuki KAWASHIMA ,  Koichi TOBA ,  Yasushi ISHII ,  Toshikazu MATSUI ,  Takashi HASHIMOTO

发明人： Yoshiyuki KAWASHIMA ,  Koichi TOBA ,  Yasushi ISHII ,  Toshikazu MATSUI ,  Takashi HASHIMOTO

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/20

CPC分类号： H01L28/60 ,  H01L27/0629 ,  H01L27/0805 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/11526 ,  H01L27/11531 ,  H01L27/11573 ,  H01L28/40

摘要： In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.

摘要翻译： 关于包括电容器元件的半导体器件，提供了一种能够提高电容器元件的可靠性的技术。 电容器元件形成在半导体衬底上形成的元件隔离区域中。 电容器元件包括通过电容器绝缘膜形成在下电极上的下电极和上电极。 基本上，下电极和上电极由形成在多晶硅膜的表面上的多晶硅膜和硅化钴膜形成。 形成在上电极上的钴硅化物膜的端部与上电极的端部间隔开一定距离。 此外，形成在下电极上的钴硅化物膜的端部与上电极和下电极之间的边界间隔一定距离。

公开(公告)号：US20120313160A1

公开(公告)日：2012-12-13

申请号：US13591035

申请日：2012-08-21

申请人： Koichi TOBA ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Takashi Hashimoto

发明人： Koichi TOBA ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Takashi Hashimoto

IPC分类号： H01L29/792

CPC分类号： H01L29/7885 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328

摘要： Provided is a semiconductor device having, over a semiconductor substrate, a control gate electrode and a memory gate electrode which are adjacent to each other and constitute a nonvolatile memory. The height of the memory gate electrode is lower than the height of the control gate electrode. A metal silicide film is formed over the upper surface of the control gate electrode, but not formed over the upper surface of the memory gate electrode. The memory gate electrode has, over the upper surface thereof, a sidewall insulating film made of silicon oxide. This sidewall insulating film is formed in the same step as that for the formation of respective sidewall insulating films over the sidewalls of the memory gate electrode and the control gate electrode. The present invention makes it possible to improve the production yield and performance of the semiconductor device having a nonvolatile memory.

摘要翻译： 提供了一种在半导体衬底上具有彼此相邻并构成非易失性存储器的控制栅电极和存储栅电极的半导体器件。 存储栅电极的高度低于控制栅电极的高度。 在控制栅电极的上表面上形成金属硅化物膜，但不形成在存储栅电极的上表面上。 存储栅电极在其上表面上具有由氧化硅制成的侧壁绝缘膜。 该侧壁绝缘膜以与用于在存储栅电极和控制栅电极的侧壁上形成各个侧壁绝缘膜的步骤相同的步骤形成。 本发明使得可以提高具有非易失性存储器的半导体器件的生产率和性能。

公开(公告)号：US20090033725A1

公开(公告)日：2009-02-05

申请号：US12182907

申请日：2008-07-30

申请人： Koichi TOBA ,  Shuichi KOGANEHIRA ,  Shohei SHIONO

发明人： Koichi TOBA ,  Shuichi KOGANEHIRA ,  Shohei SHIONO

IPC分类号： B41J2/175

CPC分类号： B41J2/17556

摘要： A liquid container for supplying a liquid to a liquid consuming apparatus includes: a liquid containing section that contains the liquid; a liquid supply section that supplies the liquid to the liquid consuming apparatus; a liquid flow section that connects from the liquid containing section to the liquid supply section; a sensor that is provided in the liquid flow section and used for detecting presence or absence of the liquid at a corresponding position thereof; and a stirring member that stirs the liquid, the stirring member is provided at a position between the sensor and the liquid supply section in the liquid flow section.

摘要翻译： 用于向液体消耗装置供给液体的液体容器包括：容纳液体的液体容纳部; 液体供给部，其将液体供给到所述液体消耗装置; 液体流通部分，其从所述液体容纳部分连接到所述液体供应部分; 传感器，设置在液体流动部分中，用于检测液体在其相应位置的存在或不存在; 以及搅拌部件，搅拌所述液体，所述搅拌部件设置在所述液体流动部中的所述传感器与所述液体供给部之间的位置。

公开(公告)号：US20120132978A1

公开(公告)日：2012-05-31

申请号：US13302184

申请日：2011-11-22

申请人： Koichi TOBA ,  Yasushi Ishi ,  Hiraku Chakihara ,  Kota Funayama ,  Yoshiyuki Kawashima ,  Takashi Hashimoto

发明人： Koichi TOBA ,  Yasushi Ishi ,  Hiraku Chakihara ,  Kota Funayama ,  Yoshiyuki Kawashima ,  Takashi Hashimoto

IPC分类号： H01L29/788 ,  H01L21/28 ,  H01L21/336

CPC分类号： H01L27/11568 ,  H01L21/28282 ,  H01L27/11573 ,  H01L29/42344 ,  H01L29/792

摘要： A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film, and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.

摘要翻译： 提供了具有非易失性存储器的半导体器件，其具有改进的特性。 半导体器件包括控制栅极电极，与控制栅电极相邻设置的存储栅电极，第一绝缘膜和包括电荷存储部分的第二绝缘膜。 在这些部件中，存储栅电极由包括位于第二绝缘膜上的第一硅区的硅膜和位于第一硅区之上的第二硅区构成。 第二硅区域含有p型杂质，第一硅区域的p型杂质浓度低于第二硅区域的p型杂质浓度。