ADHESIVE COMPOSITION AND METHOD FOR MANUFACTURING A LAMINATE USING THE ADHESIVE COMPOSITION
    4.
    发明申请
    ADHESIVE COMPOSITION AND METHOD FOR MANUFACTURING A LAMINATE USING THE ADHESIVE COMPOSITION 有权
    粘合组合物和使用粘合剂组合物制造层压体的方法

    公开(公告)号:US20130118671A1

    公开(公告)日:2013-05-16

    申请号:US13695516

    申请日:2011-04-28

    IPC分类号: C09J4/00

    摘要: Adhesive composition according to the present invention includes an adhesive base agent consisting of a monomer and a polymerization initiator. Adhesion of the adhesive composition changes to take local maximum value, minimum value and a value greater than the local maximum value along with increase of irradiation amount of the electromagnetic wave or particle beam irradiated to the adhesive composition under a predetermined temperature environment. In a method for manufacturing a laminate according to the present invention allows for easy peeling of adherends and a layer of the adhesive composition when adhesion of the adhesive composition takes the minimum value.

    摘要翻译: 根据本发明的粘合剂组合物包括由单体和聚合引发剂组成的粘合剂基剂。 粘合剂组合物的粘合力随着在预定温度环境下照射到粘合剂组合物的电磁波或粒子束的照射量的增加而变化以获得局部最大值,最小值和大于局部最大值的值。 在根据本发明的层叠体的制造方法中,当粘合剂组合物的粘合力达到最小值时,容易剥离被粘物和粘合剂组合物层。

    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method
    5.
    发明授权
    Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
    基板清洁装置,基板清洗方法和用于该方法的记录程序的介质

    公开(公告)号:US07803230B2

    公开(公告)日:2010-09-28

    申请号:US10593560

    申请日:2005-04-05

    IPC分类号: B08B7/00

    摘要: In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

    摘要翻译: 在根据本发明的基板清洗方法和基板清洗方法中,刷子3在旋转基板W的同时与基板W接触,并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上,并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中,双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置 由于刷子的污染被防止再次粘附到晶片,因此可以避免晶片W被污染。

    ETCHING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    7.
    发明申请
    ETCHING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的蚀刻方法和制造方法

    公开(公告)号:US20090246965A1

    公开(公告)日:2009-10-01

    申请号:US12410504

    申请日:2009-03-25

    IPC分类号: H01L21/3065

    摘要: Provided is an etching method capable of increasing a selectivity of a polysilicon film with respect to a silicon oxide film and suppressing the formation of recesses in a silicon base material. A wafer includes a gate oxide film, a polysilicon film and a hard mask film having an opening sequentially formed on a silicon base material, and has a native oxide film in a trench of the polysilicon film corresponding to the opening formed thereon. The native oxide film is etched, so that the polysilicon film is exposed at a bottom portion of the trench. An ambient pressure is set to be 13.3 Pa, and O2 gas, HBr gas and Ar gas are supplied to a processing space, and a frequency of bias voltage is set to be 13.56 MHz, so that the polysilicon film is etched by the plasma generated from the HBr gas to be completely removed.

    摘要翻译: 提供了能够提高多晶硅膜相对于氧化硅膜的选择性并抑制硅基材料中的凹部的形成的蚀刻方法。 晶片包括栅极氧化膜,多晶硅膜和具有依次形成在硅基材料上的开口的硬掩模膜,并且在与其上形成的开口对应的多晶硅膜的沟槽中具有自然氧化膜。 蚀刻自然氧化膜,使得多晶硅膜暴露在沟槽的底部。 将环境压力设定为13.3Pa,向加工空间供给O 2气体,HBr气体和Ar气体,将偏置电压的频率设定为13.56MHz,由此产生多晶硅膜 从HBr气体中完全去除。

    MAINTENANCE SYSTEM, SUBSTRATE PROCESSING APPARATUS, REMOTE OPERATION UNIT AND COMMUNICATION METHOD
    8.
    发明申请
    MAINTENANCE SYSTEM, SUBSTRATE PROCESSING APPARATUS, REMOTE OPERATION UNIT AND COMMUNICATION METHOD 有权
    维护系统,基板处理设备,远程操作单元和通信方法

    公开(公告)号:US20090157214A1

    公开(公告)日:2009-06-18

    申请号:US12372347

    申请日:2009-02-17

    申请人: Takuya Mori

    发明人: Takuya Mori

    IPC分类号: G06F19/00 B05C11/00 C23F1/08

    摘要: An object of the present invention is to maintain a coating and developing system by remotely operating it more safely.The present invention is a maintenance system of a substrate processing apparatus, including a remote operation unit for operating the substrate processing apparatus from a remote place by transmitting a remote operation information to a side of the substrate processing apparatus through a communication network and providing the remote operation information to the substrate processing apparatus, and a communication control unit for receiving the remote operation information transmitted to the side of the substrate processing apparatus and providing the remote operation information to the substrate processing apparatus. The communication control unit provides the remote operation information to the substrate processing apparatus only when there is an allow setting for the remote operation by a worker in the side of the substrate processing apparatus.

    摘要翻译: 本发明的目的是通过更安全地远程操作来保持涂层和显影系统。 本发明是一种基板处理装置的维护系统,其包括:远程操作单元,用于通过通信网络将远程操作信息发送到基板处理设备的一侧,并从远程操作基板处理装置提供远程 操作信息提供给基板处理装置,以及通信控制单元,用于接收发送到基板处理装置一侧的远程操作信息,并将该远程操作信息提供给基板处理装置。 通信控制单元仅在基板处理装置侧的工作人员进行远程操作的允许设定时,向基板处理装置提供远程操作信息。