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公开(公告)号：US07629252B2
公开(公告)日：2009-12-08
申请号：US11318137
申请日：2005-12-23
申请人： Kevin P. O'Brien , Chin-Chang Cheng , Ramanan V. Chebiam , Valery M. Dubin , Sridhar Balakrishnan
发明人： Kevin P. O'Brien , Chin-Chang Cheng , Ramanan V. Chebiam , Valery M. Dubin , Sridhar Balakrishnan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , B82Y30/00 , H01L21/288 , H01L21/76874
摘要： Methods of fabricating interconnect structures utilizing barrier material layers formed with an electroless deposition technique utilizing a coupling agent complexed with a catalytic metal and structures formed thereby. The fabrication fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, bonding the coupling agent to the dielectric material within the opening, and electrolessly depositing the barrier material layer, wherein the electrolessly deposited barrier material layer material adheres to the catalytic metal of the coupling agent.
摘要翻译： 使用利用与催化金属复合的偶联剂和由此形成的结构的化学沉积技术形成的阻挡材料层来制造互连结构的方法。 该制造基本上包括提供介电材料层，其具有从其第一表面延伸到电介质材料中的开口，将该耦合剂粘合到该开口内的电介质材料，以及无电沉积阻挡材料层，其中该无电沉积阻挡材料层 材料粘附到偶联剂的催化金属上。
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公开(公告)号：US07597763B2
公开(公告)日：2009-10-06
申请号：US10763470
申请日：2004-01-22
申请人： Valery M. Dubin , Arnel Fajardo , Chin-Chang Cheng
发明人： Valery M. Dubin , Arnel Fajardo , Chin-Chang Cheng
IPC分类号： B05C11/00
CPC分类号： H01L21/288 , C23C18/1632 , C23C18/1669 , C23C18/1676 , C23C18/1683 , C23C18/31
摘要： Electroless plating systems and methods are described herein.
摘要翻译： 本文描述了化学镀系统和方法。
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3.发明授权Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs 有权互连结构包含导电的无电沉积蚀刻停止层，衬里层和通孔塞公开(公告)号：US06958547B2
公开(公告)日：2005-10-25
申请号：US10446749
申请日：2003-05-28
IPC分类号： H01L21/288 , H01L21/768 , H01L23/532 , H01L23/48
CPC分类号： H01L21/76843 , H01L21/288 , H01L21/76807 , H01L21/76838 , H01L21/76849 , H01L21/76852 , H01L21/76864 , H01L21/76868 , H01L21/76874 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Multiple level interconnect structures and methods for fabricating the interconnect structures are disclosed. The interconnect structures may contain an interconnect line, an electrolessly deposited metal layer formed over the interconnect line, a via formed over the metal layer, and a second interconnect line formed over the via. Often the metal layer contains a cobalt or nickel alloy and provides an etch stop layer for formation of an opening corresponding to the via. The metal layer may provide protection to the underlying interconnect line and may replace a traditional protective dielectric layer. The metal layer is conductive, rather than dielectric, and provides a shunt for passage of electrical current between the via and the interconnect line. Similar metal layers may also be used within the interconnect structures as via liner layers and via plugs.
摘要翻译： 公开了用于制造互连结构的多级互连结构和方法。 互连结构可以包含互连线，在互连线上形成的无电沉积金属层，在金属层上形成的通孔，以及形成在通孔上的第二互连线。 通常，金属层含有钴或镍合金，并提供用于形成对应于通孔的开口的蚀刻停止层。 金属层可以为下面的互连线提供保护，并且可以代替传统的保护性介电层。 金属层是导电的，而不是电介质，并且提供用于通孔和互连线之间的电流的分流。 在互连结构中也可以使用类似的金属层，如通过衬垫层和通孔塞。
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公开(公告)号：US20080311400A1
公开(公告)日：2008-12-18
申请号：US12198053
申请日：2008-08-25
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/06 , C23C18/1646 , C23C18/1666 , C23C18/1669 , C23C18/1882 , Y10S977/742 , Y10T428/2982
摘要： An apparatus and method for forming catalyst particles to grow nanotubes is disclosed. In addition, an apparatus and method for forming nanotubes using the catalytic particles is also disclosed. The particles formed may have different diameters depending upon how they are formed. Once formed, the particles are deposited on a substrate. Once deposited, the mobility of the particles is restricted and nanotubes and/or nanotube portions are grown on the particles. Nanotube portions having different diameters may be formed and the portions may be connected to form nanotubes with different diameters along the length of the nanotube.
摘要翻译： 公开了一种用于形成催化剂颗粒以生长纳米管的装置和方法。 此外，还公开了使用催化剂颗粒形成纳米管的装置和方法。 形成的颗粒可以具有不同的直径，这取决于它们的形成方式。 一旦形成，颗粒沉积在基底上。 一旦沉积，颗粒的迁移率受到限制，纳米管和/或纳米管部分在颗粒上生长。 可以形成具有不同直径的纳米管部分，并且可以将部分连接以形成沿着纳米管的长度具有不同直径的纳米管。
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公开(公告)号：US07285494B2
公开(公告)日：2007-10-23
申请号：US11192501
申请日：2005-07-29
申请人： Chin-Chang Cheng , Valery M. Dubin
发明人： Chin-Chang Cheng , Valery M. Dubin
IPC分类号： H01L21/44
CPC分类号： H01L21/76846 , C23C18/1651 , C23C18/34 , C23C18/36 , H01L21/288 , H01L21/76838 , H01L21/76849 , H05K3/244 , H05K2203/072 , H05K2203/1476 , Y10T428/12576 , Y10T428/12861
摘要： A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating agents that are highly reactive reducing agents, and second, forming a bulk metal layer over the thin metal layer by using an electroless plating solution containing mildly reactive reducing agents. Through this two stage method, the use of highly reactive reducing agents that may cause the formation of contaminant particles may be minimized. By minimizing the formation of contaminant particles in the electroless plating solution, the lifetime of the solution may be extended and the current leakage between metal interconnect lines may be reduced.
摘要翻译： 提出了一种无电沉积金属层的多级方法。 该方法可以具有以下两个主要阶段：首先使用含有作为高反应性还原剂的活化剂的化学镀溶液在金属表面上形成薄金属层，其次，在金属薄层上通过使用 含有轻度反应性还原剂的化学镀溶液。 通过这种两阶段方法，可以使可能引起污染物颗粒形成的高反应性还原剂的使用最小化。 通过最小化化学镀溶液中的污染物颗粒的形成，可以延长溶液的寿命，并且可以减少金属互连线之间的电流泄漏。
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公开(公告)号：US07008872B2
公开(公告)日：2006-03-07
申请号：US10139052
申请日：2002-05-03
IPC分类号： H01L21/441
CPC分类号： H01L21/76843 , H01L21/288 , H01L21/76807 , H01L21/76838 , H01L21/76849 , H01L21/76852 , H01L21/76864 , H01L21/76868 , H01L21/76874 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Multiple level interconnect structures and methods for fabricating the interconnect structures are disclosed. The interconnect structures may contain an interconnect line, an electrolessly deposited metal layer formed over the interconnect line, a via formed over the metal layer, and a second interconnect line formed over the via. Often the metal layer contains a cobalt or nickel alloy and provides an etch stop layer for formation of an opening corresponding to the via. The metal layer may provide protection to the underlying interconnect line and may replace a traditional protective dielectric layer. The metal layer is conductive, rather than dielectric, and provides a shunt for passage of electrical current between the via and the interconnect line. Similar metal layers may also be used within the interconnect structures as via liner layers and via plugs.
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公开(公告)号：US07223694B2
公开(公告)日：2007-05-29
申请号：US10459131
申请日：2003-06-10
申请人： Chin-Chang Cheng , Valery M. Dubin , Peter K. Moon
发明人： Chin-Chang Cheng , Valery M. Dubin , Peter K. Moon
IPC分类号： H01L21/44
CPC分类号： H01L21/76849 , H01L21/288
摘要： A method of depositing a metal cladding on conductors in a damascene process is described. The potential between, for instance, cobalt ions in electroless solution and the surface of an ILD between the conductors is adjusted so as to repel the metal from the ILD.
摘要翻译： 描述了在镶嵌工艺中在导体上沉积金属包层的方法。 调整例如化学溶液中的钴离子与导体之间的ILD表面之间的电位，以便从ILD排斥金属。
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公开(公告)号：US06733679B2
公开(公告)日：2004-05-11
申请号：US10005737
申请日：2001-11-06
IPC分类号： C02F158
CPC分类号： C02F1/4672 , C02F1/52 , C02F1/66 , C02F1/72 , C02F2101/20 , C02F2103/16 , C02F2209/02 , C02F2209/06 , Y10S204/13
摘要： A method of treating an electroless plating waste is provided. The waste is contained and an ability of a reducing agent to reduce a metal of the waste is decreased, for example by adding a stabilizing chemical or by exposing the waste to an anode to which a positive voltage is applied. Poisonous and explosive gases evolve from the waste, which are vented. Upon completion, the waste is drained.
摘要翻译： 提供了一种处理无电镀废料的方法。 废弃物被包含，并且还原剂减少废物金属的能力降低，例如通过添加稳定化学品或通过将废物暴露于施加正电压的阳极。 有毒和爆炸性气体从排放的废物中排出。 完成后，废物被排干。
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公开(公告)号：US07964174B2
公开(公告)日：2011-06-21
申请号：US12198053
申请日：2008-08-25
IPC分类号： C01B31/02
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/06 , C23C18/1646 , C23C18/1666 , C23C18/1669 , C23C18/1882 , Y10S977/742 , Y10T428/2982
摘要： An apparatus and method for forming catalyst particles to grow nanotubes is disclosed. In addition, an apparatus and method for forming nanotubes using the catalytic particles is also disclosed. The particles formed may have different diameters depending upon how they are formed. Once formed, the particles are deposited on a substrate. Once deposited, the mobility of the particles is restricted and nanotubes and/or nanotube portions are grown on the particles. Nanotube portions having different diameters may be formed and the portions may be connected to form nanotubes with different diameters along the length of the nanotube.
摘要翻译： 公开了一种用于形成催化剂颗粒以生长纳米管的装置和方法。 此外，还公开了使用催化剂颗粒形成纳米管的装置和方法。 形成的颗粒可以具有不同的直径，这取决于它们的形成方式。 一旦形成，颗粒沉积在基底上。 一旦沉积，颗粒的迁移率受到限制，纳米管和/或纳米管部分在颗粒上生长。 可以形成具有不同直径的纳米管部分，并且可以将部分连接以形成沿着纳米管的长度具有不同直径的纳米管。
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公开(公告)号：US07262504B2
公开(公告)日：2007-08-28
申请号：US11192761
申请日：2005-07-29
申请人： Chin-Chang Cheng , Valery M. Dubin
发明人： Chin-Chang Cheng , Valery M. Dubin
CPC分类号： H01L21/76846 , C23C18/1651 , C23C18/34 , C23C18/36 , H01L21/288 , H01L21/76838 , H01L21/76849 , H05K3/244 , H05K2203/072 , H05K2203/1476 , Y10T428/12576 , Y10T428/12861
摘要： A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating agents that are highly reactive reducing agents, and second, forming a bulk metal layer over the thin metal layer by using an electroless plating solution containing mildly reactive reducing agents. Through this two stage method, the use of highly reactive reducing agents that may cause the formation of contaminant particles may be minimized. By minimizing the formation of contaminant particles in the electroless plating solution, the lifetime of the solution may be extended and the current leakage between metal interconnect lines may be reduced.
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