公开(公告)号：US20110294281A1

公开(公告)日：2011-12-01

申请号：US13130173

申请日：2009-11-19

申请人： Keyan Zang ,  Jinghua Teng ,  Soo Jin Chua

发明人： Keyan Zang ,  Jinghua Teng ,  Soo Jin Chua

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  Y10S977/742

摘要： A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.

摘要翻译： 从衬底至少部分地释放材料的外延层的方法。 该方法包括以下步骤：在衬底上形成图案化的牺牲层，使得衬底被部分地暴露并被牺牲层部分地覆盖; 通过纳米外延横向过度生长在图案化的牺牲层上生长外延层，使得外延层形成在包括图案化的牺牲层和所述材料的中间层的上方; 并且选择性地蚀刻图案化的牺牲层，使得外延层至少部分地从衬底上释放出来。

公开(公告)号：US08859399B2

公开(公告)日：2014-10-14

申请号：US13130173

申请日：2009-11-19

申请人： Keyan Zang ,  Jinghua Teng ,  Soo Jin Chua

发明人： Keyan Zang ,  Jinghua Teng ,  Soo Jin Chua

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  Y10S977/742

摘要： A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.

摘要翻译： 从衬底至少部分地释放材料的外延层的方法。 该方法包括以下步骤：在衬底上形成图案化的牺牲层，使得衬底被部分地暴露并被牺牲层部分地覆盖; 通过纳米外延横向过度生长在图案化的牺牲层上生长外延层，使得外延层形成在包括图案化的牺牲层和所述材料的中间层的上方; 并且选择性地蚀刻图案化的牺牲层，使得外延层至少部分地从衬底上释放出来。

公开(公告)号：US20060270201A1

公开(公告)日：2006-11-30

申请号：US11434399

申请日：2006-05-15

申请人： Soo Chua ,  Yadong Wang ,  Keyan Zang

发明人： Soo Chua ,  Yadong Wang ,  Keyan Zang

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： A technique for growing a high quality gallium nitride layer on a uniform nano-patterned substrate is described. The invented technique is based on the transfer of ordered nano-patterns from a nano-template to the substrate, followed by the growth of gallium nitride on the nano-patterned substrate. The nano-patterned substrate serves as a buffer layer to reduce the stress and dislocations.

摘要翻译： 描述了在均匀的纳米图案化衬底上生长高质量氮化镓层的技术。 本发明的技术基于有序纳米图案从纳米模板转移到衬底，随后在纳米图案化衬底上生长氮化镓。 纳米图案化衬底用作缓冲层以减少应力和位错。