摘要:
A THz photomixer emitter is disclosed. The emitter comprises a photoconductive material, an antenna structure, and an electrode array. The electrode array is disposed such that an electric field associated with photocarriers generated in the photoconductive material is coupled to the antenna for emission of a THz wave via the antenna structure. The electrode array is configured such that an electric field resonance pattern of the electrode array is substantially aligned with an emission field pattern of the antenna structure.
摘要:
A THz photomixer emitter is disclosed. The emitter comprises a photoconductive material, an antenna structure, and an electrode array. The electrode array is disposed such that an electric field associated with photocarriers generated in the photoconductive material is coupled to the antenna for emission of a THz wave via the antenna structure. The electrode array is configured such that an electric field resonance pattern of the electrode array is substantially aligned with an emission field pattern of the antenna structure.
摘要:
A system for nano-photolithography, a superlens device, and a method for fabricating the superlens device. A system for three-dimensional nano-photolithography includes a light source having a predetermined light wavelength, a device to be patterned, a photoresist layer of photoresponsive material photoresponsive to the predetermined light wavelength formed on the device, and a superlens device in contact with the photoresist layer. The superlens device includes a superlens layer in contact with the photoresist layer, a light permissive mask layer transparent to the predetermined light wavelength and having a layer of nanopatterned opaque features formed thereon, and an intermediate layer separating the superlens layer and the light permissive mask layer by a predetermined distance. The light source is located to radiate light at the predetermined light wavelength on the light permissive mask layer. The layer of nanopatterned opaque features includes a layer of opaque features with varying height dimensions.
摘要:
According to an embodiment of the present invention, a method of forming photonic crystals is provided. The method includes: forming a layer arrangement on a support substrate. The layer arrangement includes a first partial layer arrangement and a second partial layer arrangement, wherein the second partial layer arrangement is disposed over the first partial layer arrangement, wherein each partial layer arrangement comprises a first layer and a second layer, wherein the second layer is disposed over the first layer, and wherein the material of the second layer has a different etching characteristic than the material of the first layer. The method further includes removing at least one portion of the second layer and removing the first layer, wherein forming the layer arrangement occurs prior to removing the at least one portion of the second layer and the first layer.
摘要:
An apparatus for emitting polarized light and a method for fabricating such apparatus are provided. The apparatus includes a surface emission light emitting diode (LED), a first electrode, and a sub-wavelength metal grating (SWMG). The surface emission LED includes a first contact surface and a second contact surface. The first electrode is coupled to the first contact surface. The SWMG is formed on a surface of the surface emission LED.
摘要:
A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.
摘要:
A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that one or more features are formed underneath respective portions of the dielectric mask; depositing a passivation layer on the substrate with the dielectric mask in place above the features; subjecting the substrate to an etchant such that the dielectric mask is etched at a higher rate than the passivation layer, whereby portions of the passivation layer deposited on the dielectric mask are lifted off from the substrate; and depositing a metal layer on the substrate including over the remaining passivation layer and exposed portions of the features.
摘要:
A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.
摘要:
A light emitting diode structure, a lamp device and a method of forming a light emitting diode structure are provided. The structure has a substrate coated with a first reflective material; an electrode coated with a second reflective material, one or more layers of light emitting material, the layers disposed between the substrate and electrode; wherein in use, the first reflective material and second reflective material reflects light out of the structure via at least one light emitting surface and in a direction away from the electrode.
摘要:
A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that one or more features are formed underneath respective portions of the dielectric mask; depositing a passivation layer on the substrate with the dielectric mask in place above the features; subjecting the substrate to an etchant such that the dielectric mask is etched at a higher rate than the passivation layer, whereby portions of the passivation layer deposited on the dielectric mask are lifted off from the substrate; and depositing a metal layer on the substrate including over the remaining passivation layer and exposed portions of the features.