公开(公告)号：US09178024B2

公开(公告)日：2015-11-03

申请号：US13464613

申请日：2012-05-04

申请人： Ki-Won Kim ,  Kap Soo Yoon ,  Woo Geun Lee ,  Jin-Won Lee ,  Se-Myung Kwon ,  Jung Ouck Ahn ,  Si Jin Kim

发明人： Ki-Won Kim ,  Kap Soo Yoon ,  Woo Geun Lee ,  Jin-Won Lee ,  Se-Myung Kwon ,  Jung Ouck Ahn ,  Si Jin Kim

IPC分类号： H01L21/00 ,  H01L29/417 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/66765 ,  H01L29/78696

摘要： A method for manufacturing a thin film transistor array panel includes forming a gate line and a gate electrode protruding from the gate line on a substrate; forming a gate insulating layer on the gate line and the gate electrode; depositing sequentially a semiconductor material and a metal material on the gate insulating layer; performing a first etching operation on the semiconductor material and the metal material using a first mask to form a semiconductor layer and a metal layer, the metal layer including a data line, a source electrode, and a drain electrode, in which the drain electrode protrudes from the data line, and the source electrode and the drain electrode having an integral shape; and performing a second etching operation on the metal layer using a second mask to divide the source electrode and the drain electrode.

摘要翻译： 一种制造薄膜晶体管阵列面板的方法，包括：在基板上形成从栅极线突出的栅极线和栅电极; 在栅极线和栅电极上形成栅极绝缘层; 在栅极绝缘层上依次沉积半导体材料和金属材料; 使用第一掩模对所述半导体材料和所述金属材料进行第一蚀刻操作以形成半导体层和金属层，所述金属层包括数据线，源电极和漏电极，其中所述漏电极突出 数据线，源电极和漏电极具有整体形状; 以及使用第二掩模对所述金属层进行第二蚀刻操作以分割所述源电极和所述漏电极。

公开(公告)号：US08866137B2

公开(公告)日：2014-10-21

申请号：US13365704

申请日：2012-02-03

申请人： Jin-Won Lee ,  Woo Geun Lee ,  Kap Soo Yoon ,  Ki-Won Kim ,  Hyun-Jung Lee ,  Hee-Jun Byeon ,  Ji-Soo Oh

发明人： Jin-Won Lee ,  Woo Geun Lee ,  Kap Soo Yoon ,  Ki-Won Kim ,  Hyun-Jung Lee ,  Hee-Jun Byeon ,  Ji-Soo Oh

IPC分类号： H01L29/12 ,  H01L27/12 ,  H01L29/417

CPC分类号： H01L27/1225 ,  H01L29/41733

摘要： A thin film transistor array panel includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a first electrode and an oxide semiconductor disposed directly on the gate insulating layer; a source electrode and a drain electrode formed on the oxide semiconductor; a passivation layer disposed on the first electrode, the source electrode, and the drain electrode; and a second electrode disposed on the passivation layer.

摘要翻译： 薄膜晶体管阵列面板包括：设置在绝缘基板上的栅电极; 设置在栅电极上的栅极绝缘层; 直接设置在栅极绝缘层上的第一电极和氧化物半导体; 形成在所述氧化物半导体上的源电极和漏电极; 设置在所述第一电极，所述源电极和所述漏电极上的钝化层; 以及设置在钝化层上的第二电极。

公开(公告)号：US09153600B2

公开(公告)日：2015-10-06

申请号：US13618308

申请日：2012-09-14

申请人： Hye Young Ryu ,  Hee Jun Byeon ,  Woo Geun Lee ,  Kap Soo Yoon ,  Yoon Ho Kim ,  Chun Won Byun

发明人： Hye Young Ryu ,  Hee Jun Byeon ,  Woo Geun Lee ,  Kap Soo Yoon ,  Yoon Ho Kim ,  Chun Won Byun

IPC分类号： G02F1/1343 ,  G02F1/1362 ,  H01L27/12

CPC分类号： H01L27/127 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136222 ,  G02F2001/136295 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262

摘要： A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a second passivation layer formed of an organic insulator, protect a side of the contact hole by covering with a protection member formed of the same layer as the first field generating electrode and formed of a transparent conductive material, and etch the first passivation layer below the second passivation layer using the protection member as a mask. Therefore, it is possible to prevent the second passivation layer formed of an organic insulator from being overetched while etching the insulating layer below the second passivation layer so that the contact hole is prevented from being made excessively wide.

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板及其制造方法在由有机绝缘体形成的第二钝化层中形成接触孔，通过用由保护构件形成的保护构件覆盖来保护接触孔的一侧 与第一场产生电极相同的层并由透明导电材料形成，并且使用保护构件作为掩模，将第二钝化层下面的第一钝化层蚀刻。 因此，可以防止由有机绝缘体形成的第二钝化层在蚀刻第二钝化层下方的绝缘层的同时进行过蚀刻，从而防止接触孔过宽。

公开(公告)号：US07570464B2

公开(公告)日：2009-08-04

申请号：US10498099

申请日：2002-10-11

申请人： Young-Hoan Jun ,  Dong-Hee Shin ,  Gyoo-Jong Bae ,  Woo Geun Lee

发明人： Young-Hoan Jun ,  Dong-Hee Shin ,  Gyoo-Jong Bae ,  Woo Geun Lee

IPC分类号： H02H7/00

CPC分类号： F04B49/065 ,  F04B35/045 ,  F04B49/02 ,  F04B2201/0206 ,  F04B2203/0401 ,  F04B2203/0402 ,  H02P25/032

摘要： In an overload protective apparatus of a compressor and its method capable of preventing damage of a compressor due to overload by removing an overload protector and using an operation control device operating the compressor, the overload protective apparatus includes a reference current setting unit for presetting a reference current value for operating the compressor normally; a microcomputer for generating a power cutoff signal when the detected current value is greater than the reference current value and generating a power supply signal when the detected current value is smaller than the reference current value; and a power supply unit for cutting off power applied to the compressor on the basis of the power cutoff signal or applying power to the compressor on the basis of the power supply signal.

摘要翻译： 在压缩机的过载保护装置及其方法中，能够通过去除过载保护器和使用操作压缩机的操作控制装置来防止压缩机由于过载而造成的损坏，该过载保护装置包括：参考电流设定单元，用于预设参考 正常运行压缩机的当前值; 微型计算机，当所检测的电流值大于所述基准电流值时，产生电力切断信号，并且当所检测的电流值小于所述基准电流值时产生电源信号; 以及电源单元，用于根据电力切断信号切断施加到压缩机的电力，或者根据电源信号对压缩机施加电力。