摘要:
A solid-state imaging device including a number of pixels each having a photoelectric converting portion and arranged one-dimensionally or in a two-dimensional matrix is provided. The solid-state imaging device includes a peripheral wiring portion with a multilayer stricture provided around at least part of the photoelectric converting portion in each of the number of pixels and a light-shielding interlayer connecting material to connect layers of the multilayer structure to each other provided to at least part of the peripheral wiring portion.
摘要:
A solid-state imaging device and an electronic device that includes the solid-state imaging device prevents shifting of a photoelectric conversion region due to long-wavelength light passing to subsurface portions of the solid-state imagine device. The device include a photo diode having an upper layer of a first conductivity type formed over a second layer having an accumulation region of a second conductivity type. The upper layer is a light-receiving portion of the photodiode. A multi-stage element isolation layer is included and has a plurality of layers of the first conductivity type, such that a first lateral side of a first stage of the multi-stage layer abuts the accumulation portion, and a second stage of the multi-stage layer is separated by a width W from the accumulation region of an intermediate portion of a second conductivity type.
摘要:
A solid-state imaging device and an electronic device that includes the solid-state imaging device prevents shifting of a photoelectric conversion region due to long-wavelength light passing to subsurface portions of the solid-state imagine device. The device include a photo diode having an upper layer of a first conductivity type formed over a second layer having an accumulation region of a second conductivity type. The upper layer is a light-receiving portion of the photodiode. A multi-stage element isolation layer is included and has a plurality of layers of the first conductivity type, such that a first lateral side of a first stage of the multi-stage layer abuts the accumulation portion, and a second stage of the multi-stage layer is separated by a width W from the accumulation region of an intermediate portion of a second conductivity type.
摘要:
A solid-state imaging device including a number of pixels, each of which having a photoelectric converting portion, and which are arranged one-dimensionally or in a two-dimensional matrix. The solid-state imaging device includes a peripheral wiring portion with a multilayer structure provided around at least part of the photoelectric converting portion in each of the number of pixels and a light-shielding interlayer connecting material connecting layers of the multilayer structure to each other at least part of the peripheral wiring portion. The light-shielding interlayer connecting material is capable of reflecting or absorbing visible light.
摘要:
A fuel injection unit of an internal combustion engine includes at least an injector, an inlet opening, and an intake stroke injection device. A controller causes the intake stroke injection device to cause the injector to inject fuel in an intake stroke so that the fuel is introduced into an interior of a cylinder from the inlet opening. The fuel is injected from the injector into a range, which spreads in a width of an inside of the inlet opening when viewed from above of the cylinder, and which spreads in a width defined in a side of a center of the cylinder from a valve shaft in a state where the inlet valve is in a maximum lift-up level within the inside of the inlet opening when viewed from a lateral of the cylinder.
摘要:
A solid-state imaging device includes: a semiconductor substrate; photoelectric conversion units formed in array on the semiconductor substrate and forming a light receiving unit; and wiring sections formed in positions among the photoelectric conversion units. The wiring sections include wiring bodies formed by superimposing wiring layers on the light receiving unit and including a bottom wiring body on the semiconductor substrate side, a top wiring body on an uppermost side, and an intermediate wiring body between the bottom wiring body and the top wiring body, and contacts connecting the wiring bodies in order of vertical overlap, and in at least one of the wiring sections, the wiring bodies other than the bottom wiring body are superimposed while being shifted from a position right above the bottom wiring body, and amounts of shift of the intermediate wiring body and the contacts connected to the intermediate wiring body are the same.
摘要:
Large array of radio frequency ID transponders deployed in an array by use of deploying rows of transponders that unwind from long spools of high strength fibre or tape with passive RFID transponders separated by fixed lengths
摘要:
A biaxially oriented polyester film to be laminated on a metal plate and molded, which comprises an aromatic polyester composition comprising: (A) an aromatic polyester which comprises ethylene terephthalate as the main recurring unit and a titanium compound and a phosphorus compound both of which satisfy at least one of the following expressions (1) and (2): 0.1≦Ti/P≦3.0 (1) 5≦Ti+P≦60 (2) wherein Ti is the amount (mmol %) of elemental titanium of the titanium compound contained in this aromatic polyester and P is the amount (mmol %) of elemental phosphorus of the phosphorus compound contained in the aromatic polyester, and the following expression (3): 2≦Ti≦20 (3) wherein Ti is as defined hereinabove, and which contains alkali metal compounds, germanium compound and antimony compound in a total amount of not more than 3 ppm in terms of the total of elemental alkali metals, elemental germanium and elemental antimony; and (B) 0.05 to 5.0 wt % based on the aromatic polyester composition of inert fine particles having an average particle diameter of 2.5 &mgr;m or less.
摘要:
A process for synthesizing silicon nitride by reacting a silicon halide and ammonia at a high temperature, which is characterized in that at least while the reaction product is amorphous, hydrogen and chlorine are burned in the reaction zone where a halogen containing inorganic silicon compound and ammonia are reacting, and the reaction of said reactants is effected by the heat of combustion thus obtained.
摘要:
In a process for producing p-xylene which comprises catalytically methylating toluene with a methylating agent in the gaseous phase, the improvement wherein(a) said methylation is carried out continuously in a multi-stage reaction system consisting of a plurality of separate series-connected fixed catalyst layers without separating the resulting xylenes in an intermediate stage,(b) said toluene is fed together with hydrogen gas into only the first-stage fixed catalyst layer and passed successively through the subsequent fixed catalyst layers, the amount of toluene fed being such that the total weight hourly space velocity of toluene is from 1 to 300 hr.sup.-1,(c) said methylating agent is fed into each of said fixed catalyst layers, if desired together with hydrogen gas, the amount of the methylating agent fed into each catalyst layer being 0.01/t moles to 1/t moles, in which t is the number of methyl groups in the methylating agent, per mole of toluene fed into the first-stage catalyst layer, and the total amount of the methylating agent fed into all of the catalyst layers being within the range of 0.1/t moles to 2/t moles, in which t is as defined, per mole of toluene fed into the first-stage catalyst layer, and(d) each fixed catalyst layer is filled with a catalyst composed of a crystalline aluminosilicate containing magnesium oxide or lanthanide oxide.