公开(公告)号：US20240097658A1

公开(公告)日：2024-03-21

申请号：US18178038

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Fumiya WATANABE ,  Toshifumi WATANABE ,  Kazuhiko SATOU ,  Shouichi OZAKI ,  Kenro KUBOTA ,  Atsuko SAEKI ,  Ryota TSUCHIYA ,  Harumi ABE

IPC: H03K3/011 ,  G11C7/10 ,  H03K17/14

CPC classification number: H03K3/011 ,  G11C7/1048 ,  H03K17/14 ,  G11C2207/2254 ,  H03K19/20

Abstract: A semiconductor device includes a first pad, a second pad, a first output driver provided for the first pad and configured to output a first transmission signal to the first pad, a second output driver provided for the second pad and configured to output a second transmission signal to the second pad, a register that stores first and second calibration values, a first reference resistor for the first pad and having a resistance value that is set according to the first calibration value, a second reference resistor for the second pad and having a resistance value that is set according to the second calibration value, a first setting circuit configured to calibrate a resistance value of the first output driver using the first reference resistor, and a second setting circuit configured to calibrate a resistance value of the second output driver using the second reference resistor.

公开(公告)号：US20240313776A1

公开(公告)日：2024-09-19

申请号：US18594589

申请日：2024-03-04

Applicant: Kioxia Corporation

Inventor： Fumiya WATANABE ,  Kazuhiko SATOU ,  Kenro KUBOTA ,  Atsuko SAEKI ,  Ryota TSUCHIYA ,  Harumi ABE ,  Kanta NAGUMO

IPC: H03K19/00 ,  H03K19/003 ,  H03K19/0185

CPC classification number: H03K19/0005 ,  H03K19/00384 ,  H03K19/018557

Abstract: A semiconductor device includes a first circuit, a first pad, a first comparator, a second comparator, and a control circuit. The first circuit is configured to pull up a voltage of a first node, and includes a plurality of first transistors connected in parallel to the first node. The first pad is connected to the first node. The first comparator is configured to compare a voltage of the first node with a first reference voltage. The second comparator is configured to compare the voltage of the first node with a second reference voltage. The control circuit is configured to control the plurality of first transistors based on an output of the first comparator and an output of the second comparator.

公开(公告)号：US20240079067A1

公开(公告)日：2024-03-07

申请号：US18176442

申请日：2023-02-28

Applicant: Kioxia Corporation

Inventor： Shouichi OZAKI ,  Kazuhiko SATOU ,  Kenro KUBOTA ,  Fumiya WATANABE ,  Atsuko SAEKI ,  Ryota TSUCHIYA ,  Harumi ABE ,  Toshifumi WATANABE

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/10 ,  G11C16/32

CPC classification number: G11C16/26 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/32

Abstract: A semiconductor memory device includes an output pin configured for connection with a memory controller, an output circuit configured to output through the output pin a voltage signal that changes over time in accordance with one or more bits of data to be output to the memory controller, and a control circuit configured to temporarily change a drive capability of the output circuit each time a voltage signal corresponding to one bit of the data is output through the output pin.