公开(公告)号：US20240090344A1

公开(公告)日：2024-03-14

申请号：US18178469

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Takeo KOIKE ,  Rina NOMOTO ,  Hiroyuki KANAYA ,  Masahiko NAKAYAMA ,  Daisuke WATANABE

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/20 ,  H01F10/329

Abstract: A magnetic storage device includes first and second magnetic layers and a non-magnetic layer, where the non-magnetic layer includes a first oxide layer containing magnesium and oxygen, a second oxide layer containing magnesium and oxygen, a third oxide layer containing zinc and oxygen, a fourth oxide layer containing a first predetermined element and oxygen, and a fifth oxide layer containing a second predetermined element and oxygen, and a crystal structure of an oxide of the first predetermined element and a crystal structure of an oxide of the second predetermined element are each a rock salt structure. The first predetermined element and the second predetermined element each have an oxide formation free energy greater than an oxide formation free energy of zinc, and the oxide of the first predetermined element and the oxide of the second predetermined element each have a bandgap narrower than a bandgap of an oxide of magnesium.

公开(公告)号：US20240074324A1

公开(公告)日：2024-02-29

申请号：US18456397

申请日：2023-08-25

Applicant: Kioxia Corporation

Inventor： Rina NOMOTO ,  Hiroyuki KANAYA ,  Yusuke MUTO ,  Takeshi IWASAKI

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H10B61/00 ,  H10N50/85 ,  G11C11/1673 ,  G11C11/1675

Abstract: According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.

公开(公告)号：US20210257413A1

公开(公告)日：2021-08-19

申请号：US17003759

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki KANAYA

IPC: H01L27/24 ,  H01L27/22 ,  H01L43/08 ,  G11C7/18 ,  H01L45/00 ,  G11C8/14

Abstract: A semiconductor memory device has a first wiring extending in a first direction and a second wiring extending in a second direction. The first and second wirings are spaced from each other in a third direction. The second wiring has a first recess facing the first wiring. A resistance change memory element is connected between the first and second wirings. A conductive layer is between the resistance change memory element and the second wiring and includes a first protrusion facing the second wiring, A switching portion is between the conductive layer and the second wiring and includes a second recess facing the conductive layer and a second protrusion facing the second wiring. The first protrusion is in the second recess. The second protrusion is in the first recess. The switching portion is configured to switch conductivity state according to voltage between the first wiring and the second wiring.

公开(公告)号：US20240292631A1

公开(公告)日：2024-08-29

申请号：US18587939

申请日：2024-02-26

Applicant: Kioxia Corporation

Inventor： Hiroyuki KANAYA ,  Masahiko NAKAYAMA

IPC: H10B61/00

CPC classification number: H10B61/10

Abstract: A semiconductor storage device includes a plurality of first wirings extending in a first direction and a plurality of second wirings extending in a second direction intersecting the first direction. A plurality of memory cells are connected between the plurality of first wirings and the plurality of second wirings and include selectors each connected in series to variable resistance elements. Each selector includes a selector material switching a current flowing to the variable resistance element according to a voltage difference between the first wiring and the second wiring, and first and second electrodes sandwiching the selector material in a portion between the first wiring and the variable resistance element. A contact area between the first electrode and the selector material is less than an area of the selector material when viewed in a stacking direction of the selector and the variable resistance element.

公开(公告)号：US20230309428A1

公开(公告)日：2023-09-28

申请号：US17899914

申请日：2022-08-31

Applicant: KIOXIA CORPORATION

Inventor： Kenji FUKUDA ,  Rina NOMOTO ,  Hiroyuki KANAYA ,  Masahiko NAKAYAMA ,  Hideyuki SUGIYAMA

IPC: H01L45/00 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L27/24

CPC classification number: H01L45/146 ,  H01L45/1286 ,  H01L45/1616 ,  H01L45/1675 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/2463

Abstract: A storage device includes a memory cell including a variable resistance element and a switching element having snapback current-voltage characteristics. The switching element includes a first conductive layer in contact with the variable resistance element, a second conductive layer, and a switching layer provided between the first conductive layer and the second conductive layer. The switching layer includes at least one switching member and a first insulating layer having a thermal conductivity higher than 1.4 W/m/K. A cross-sectional area of the switching member at a connection surface between the switching layer and the first conductive layer and a cross-sectional area of the switching member at a connection surface between the switching layer and the second conductive layer are each smaller than a cross-sectional area at a connection surface between the first conductive layer and the variable resistance element.

公开(公告)号：US20240324477A1

公开(公告)日：2024-09-26

申请号：US18593589

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Soichiro ONO ,  Hiroyuki KANAYA

IPC: H10N70/00 ,  H10B63/00

CPC classification number: H10N70/841 ,  H10B63/84 ,  H10N70/011 ,  H10N70/8828

Abstract: A storage device includes a memory cell that includes a variable resistance storage element and a switching element connected in series thereto and stacked therewith in a first direction, the switching element including a first electrode, a second electrode that includes a first part formed of a first material to which a first element is added, and a switching material layer that is between the first electrode and the first part of the second electrode and formed of a first insulating material to which the first element is added. The storage device further includes a first insulating layer that surrounds the switching material layer and formed of the first insulating material to which the first element is not added. An outer periphery of the first part of the second electrode and an outer periphery of the switching material layer are aligned in the first direction.

公开(公告)号：US20230189661A1

公开(公告)日：2023-06-15

申请号：US17898812

申请日：2022-08-30

Applicant: KIOXIA CORPORATION

Inventor： Shogo ITAI ,  Kazuya MATSUZAWA ,  Masahiko NAKAYAMA ,  Hiroyuki KANAYA ,  Hideyuki SUGIYAMA

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  G11C5/08

CPC classification number: H01L43/10 ,  G11C5/08 ,  H01L27/222 ,  H01L43/02

Abstract: A switching element includes a first conductive layer, a second conductive layer, and a switching material layer provided between the first conductive layer and the second conductive layer and formed of an insulating material containing an additional element. The switching material layer includes a first interface region including a first interface between the first conductive layer and the switching material layer and a second interface region including a second interface between the second conductive layer and the switching material layer. A concentration of the additional element in the switching material layer has a first peak in the first interface region.

公开(公告)号：US20230079445A1

公开(公告)日：2023-03-16

申请号：US17692625

申请日：2022-03-11

Applicant: Kioxia Corporation

Inventor： Kenji FUKUDA ,  Hideyuki SUGIYAMA ,  Masahiko NAKAYAMA ,  Hiroyuki KANAYA ,  Soichi OIKAWA

IPC: H01L27/22

Abstract: According to one embodiment, a memory device includes a first memory cell, a second memory cell adjacent to the first memory cell in a first direction, and a third memory cell adjacent to the first memory cell in a second direction, each of the first, second, and third memory cells including a resistance change memory element and a switching element. The switching element includes first and second electrodes, and a switching material layer between the first and second electrodes, the first and second electrodes overlap each other when viewed from the first direction, the first electrodes in the first and second memory cells are apart from each other, and the switching material layers in the first and second memory cells are continuously provided.

公开(公告)号：US20220085281A1

公开(公告)日：2022-03-17

申请号：US17196772

申请日：2021-03-09

Applicant: Kioxia Corporation

Inventor： Hiroyuki KANAYA

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L23/00

Abstract: According to one embodiment, a magnetic memory device includes first and second wirings, and memory cells between the first and second wirings, and each including a switching element and a magnetoresistance effect element, the switching element being connected to a first wiring, and the magnetoresistance effect element being connected to a second wiring. The switching element includes a bottom electrode, a top electrode, and a switching material layer between the bottom and top electrodes, and the bottom electrode included in each of the memory cells adjacent to each other in a first direction is continuously provided on the first wiring connecting the memory cells adjacent to each ether in the first direction.