公开(公告)号：US11791279B2

公开(公告)日：2023-10-17

申请号：US17020047

申请日：2020-09-14

申请人： Kioxia Corporation

发明人： Tatsunori Isogai ,  Masaki Noguchi ,  Tatsufumi Hamada ,  Shinichi Sotome

IPC分类号： H01L23/552 ,  H10B43/27 ,  H10B43/35 ,  H01L21/324

CPC分类号： H01L23/552 ,  H01L21/324 ,  H10B43/27 ,  H10B43/35

摘要： A semiconductor device according to an embodiment includes a stacked body having first films and second films that are alternately stacked, a light shielding film provided in a specific layer of the stacked body and having a higher optical absorptivity than that of the second films, and a channel film extending in the stacked body in the stacking direction. The channel film includes a first part located on an upper side than the light shielding film in the stacking direction and containing a monocrystalline semiconductor.

公开(公告)号：US11862696B2

公开(公告)日：2024-01-02

申请号：US17120951

申请日：2020-12-14

申请人： Kioxia Corporation

发明人： Shunsuke Okada ,  Tomonori Aoyama ,  Tatsunori Isogai ,  Masaki Noguchi

IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L29/51 ,  H10B43/27

CPC分类号： H01L29/4234 ,  H01L29/40117 ,  H01L29/513 ,  H01L29/517 ,  H10B43/27

摘要： A semiconductor storage device relating to one embodiment includes: a stacked body in which electrode films and insulating films are alternately stacked in a first direction; a first and a second charge storage films that are arranged away from each other in the first direction inside the stacked body and each face one of the electrode films; and a tunnel insulating film that extends in the first direction inside the stacked body and is in contact with the first and the second charge storage films. The first and the second charge storage films each include a first film that is in contact with the electrode film and contains a High-k material, and a second film that is provided between the first film and the tunnel insulating film and contains silicon nitride.

公开(公告)号：US11769838B2

公开(公告)日：2023-09-26

申请号：US17731721

申请日：2022-04-28

申请人： Kioxia Corporation

发明人： Masaki Noguchi ,  Akira Takashima ,  Tatsunori Isogai

IPC分类号： H01L29/792 ,  H01L29/51 ,  H10B43/27 ,  H10B43/35 ,  H01L49/02 ,  H01L23/528 ,  H01L21/28

CPC分类号： H01L29/7926 ,  H01L29/513 ,  H10B43/27 ,  H10B43/35 ,  H01L23/528 ,  H01L28/60 ,  H01L29/40117 ,  H01L29/518

摘要： A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.

公开(公告)号：US12048157B2

公开(公告)日：2024-07-23

申请号：US17475660

申请日：2021-09-15

申请人： Kioxia Corporation

发明人： Shunsuke Okada ,  Tatsunori Isogai ,  Masaki Noguchi

IPC分类号： H10B43/27 ,  H01L21/28 ,  H01L29/423 ,  H10B41/27

CPC分类号： H10B43/27 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H10B41/27

摘要： A semiconductor storage device of an embodiment includes: a laminated body including electrode layers and insulating layers alternately stacked in a first direction; a semiconductor layer disposed in the laminated body; a first insulating film disposed between the laminated body and the semiconductor layer; a charge storage film disposed between the laminated body and the first insulating film, thicknesses of the charge storage film in a second direction crossing the first direction in the regions corresponding to the electrode layers being different from that in the regions corresponding to the insulating layers, the charge storage film comprising: a second insulating film disposed between the laminated body and the first insulating film, and a third insulating film disposed between the second insulating film and the regions corresponding to the electrode layers, the third insulating film having a density different from that of the second insulating film.

公开(公告)号：US11735673B2

公开(公告)日：2023-08-22

申请号：US17019662

申请日：2020-09-14

申请人： Kioxia Corporation

发明人： Masaki Noguchi ,  Akira Takashima

IPC分类号： H01L29/66 ,  H10B43/27 ,  H01L29/786 ,  H01L29/04 ,  H01L29/792 ,  H10B43/30

CPC分类号： H01L29/78693 ,  H01L29/04 ,  H01L29/66833 ,  H01L29/792 ,  H10B43/27 ,  H10B43/30

摘要： In one embodiment, a semiconductor device includes a stacked film including electrode layers and insulating layers that are alternately stacked in a first direction. The device further includes a first insulator, a charge storage layer, a second insulator and a semiconductor layer that are provided in the stacked film. The device further includes a third insulator provided between an electrode layer and an insulating layer and between the electrode layer and the first insulator, and including aluminum oxide having an α crystal phase.

公开(公告)号：US11631694B2

公开(公告)日：2023-04-18

申请号：US17003803

申请日：2020-08-26

申请人： KIOXIA CORPORATION

发明人： Masaki Noguchi ,  Tatsunori Isogai

IPC分类号： H01L27/11582 ,  H01L21/762 ,  H01L21/02

摘要： According to one or more embodiments, a method for manufacturing a semiconductor device comprises forming a stacked film that comprises alternating first insulating layers and second insulating layers. A first insulating film, an electric charge storage layer, a second insulating film, and a first semiconductor layer are then formed in a hole in the stacked film. The method further includes forming a first recess in the stacked film, then supplying a first gas and a deuterium gas to the first recess. The first gas comprises hydrogen and oxygen.

公开(公告)号：US11282932B2

公开(公告)日：2022-03-22

申请号：US16807519

申请日：2020-03-03

申请人： KIOXIA CORPORATION

发明人： Shunsuke Okada ,  Tatsunori Isogai ,  Masaki Noguchi

IPC分类号： H01L29/423 ,  H01L27/11568 ,  H01L21/02 ,  H01L29/51 ,  H01L21/28 ,  H01L27/11582

摘要： A semiconductor memory device includes a stacked structure and a memory pillar. The stacked structure includes electrode layers and insulating layers alternately provided on a substrate. The memory pillar extends through the stacked structure in a thickness direction. The memory pillar includes a semiconductor layer extending along the thickness direction, and a first insulating film, a charge storage layer, and a second insulating film provided around the semiconductor layer. The charge storage layer contains fluorine, and a fluorine concentration in the charge storage layer has a gradient along a plane direction of the substrate with a peak. A first distance from an inner end of the charge storage layer to the peak in the plane direction is shorter than a second distance from an outer end of the charge storage layer to the peak in the plane direction.