公开(公告)号：US20210066090A1

公开(公告)日：2021-03-04

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi HASHIMOTO ,  Kaori NARUMIYA ,  Kosuke HORIBE ,  Soichi YAMAZAKI ,  Kei WATANABE ,  Yusuke KONDO ,  Mitsuhiro OMURA ,  Takehiro KONDOH ,  Yuya MATSUBARA ,  Junya FUJITA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

公开(公告)号：US20210287903A1

公开(公告)日：2021-09-16

申请号：US17004216

申请日：2020-08-27

Applicant: Kioxia Corporation

Inventor： Takehiro KONDOH ,  Junichi HASHIMOTO ,  Soichi YAMAZAKI ,  Yuya MATSUBARA

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/308

Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.