公开(公告)号：US20220301809A1

公开(公告)日：2022-09-22

申请号：US17472444

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Junichi HASHIMOTO ,  Toshiyuki SASAKI

IPC: H01J37/147 ,  H01L21/768 ,  H01L21/263 ,  H01L21/02 ,  H01L27/11575 ,  H01J37/32 ,  C23C16/04 ,  C23C16/40 ,  C23C16/48 ,  C23C16/52

Abstract: A method of manufacturing a semiconductor device includes: preparing a stepped structure being arranged on a substrate, the stepped structure including a first region and a second region, a height of the stepped structure of the second region being lower than a height of the stepped structure of the first region; and etching the first region and the second region of the stepped structure by irradiating the first region and the second region with an ion beam, an irradiation amount of the ion beam irradiating the first region is larger than an irradiation amount of the ion beam irradiating the second region.

公开(公告)号：US20230307244A1

公开(公告)日：2023-09-28

申请号：US18325640

申请日：2023-05-30

Applicant: KIOXIA CORPORATION ,  KANTO DENKA KOGYO CO., LTD.

Inventor： Takaya ISHINO ,  Toshiyuki SASAKI ,  Mitsuharu SHIMODA ,  Hisashi SHIMIZU

IPC: H01L21/3065 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01L21/3213

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

公开(公告)号：US20210296137A1

公开(公告)日：2021-09-23

申请号：US17005568

申请日：2020-08-28

Applicant: Kioxia Corporation

Inventor： Junichi HASHIMOTO ,  Mitsuhiro OMURA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033

Abstract: A film processing method includes forming a target film, the target film having an upper surface. The method includes forming a carbon film on the upper surface of the target film. The method includes performing a first etching to format least one recess in the target film, with the carbon film serving as a mask. The method includes performing a second etching, by directing an ion beam through the at least one recess, to increase a depth of the at least one recess.

公开(公告)号：US20230114349A1

公开(公告)日：2023-04-13

申请号：US18080838

申请日：2022-12-14

Applicant: Kioxia Corporation

Inventor： Chihiro ABE ,  Toshiyuki SASAKI ,  Hisataka HAYASHI ,  Mitsuhiro OMURA ,  Tsubasa IMAMURA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

公开(公告)号：US20220085046A1

公开(公告)日：2022-03-17

申请号：US17400627

申请日：2021-08-12

Applicant: Kioxia Corporation

Inventor： Takashi FUKUSHIMA ,  Toshiyuki SASAKI

IPC: H01L27/11568 ,  H01L27/11521

Abstract: A semiconductor memory device includes a substrate; a plurality of first conductive layers and first insulating layers stacked in alternation; a first semiconductor layer opposed to first conductive layers and first insulating layers; a second semiconductor layer; a second insulating layer that covers outer peripheral surface of the first semiconductor layer; and a third insulating layer disposed at a position different from first conductive layers, first insulating layers, and the second insulating layer, the third insulating layer having one end in contact with the second semiconductor, the third insulating layer having another end farther from the second semiconductor layer than the second insulating layer. A metal oxide film is disposed on a surface on the third insulating layer side of the second insulating layer. A metal oxide film is absent on a surface on the third insulating layer side of the plurality of first insulating layers.

公开(公告)号：US20210335610A1

公开(公告)日：2021-10-28

申请号：US17184828

申请日：2021-02-25

Applicant: Kioxia Corporation

Inventor： Kei WATANABE ,  Toshiyuki SASAKI ,  Soichi YAMAZAKI ,  Shunsuke OCHIAI ,  Yuya MATSUBARA

IPC: H01L21/033

Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

公开(公告)号：US20240381648A1

公开(公告)日：2024-11-14

申请号：US18782330

申请日：2024-07-24

Applicant: Kioxia Corporation

Inventor： Toshiyuki SASAKI

IPC: H10B43/27 ,  A45F5/02 ,  B24B3/54 ,  B26B29/02 ,  G11C16/10 ,  H01L21/311 ,  H01L23/528 ,  H01L23/532 ,  H01L29/10 ,  H01L29/792 ,  H10B43/20 ,  H10B43/35

Abstract: According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.

公开(公告)号：US20240098999A1

公开(公告)日：2024-03-21

申请号：US18458069

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Junichi HASHIMOTO ,  Toshiyuki SASAKI

IPC: H10B43/27 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

CPC classification number: H10B43/27 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: According to one embodiment, a semiconductor memory device includes a lower layer, a stacked body above the lower layer with first conductive layers and first insulating layers alternately stacked. A pillar penetrates through the stacked body to reach the lower layer. At least one first insulating layer other than the lowest among the first insulating layers in a first region of the stacked body is thicker than first insulating layers in a second region above the first region. The pillar has a first bowing shape at the height of the at least one thicker first insulating layer and a second bowing shape at a height in the second region.

公开(公告)号：US20240096626A1

公开(公告)日：2024-03-21

申请号：US18177353

申请日：2023-03-02

Applicant: Kioxia Corporation

Inventor： Toshiyuki SASAKI

IPC: H01L21/033 ,  H01L21/311

CPC classification number: H01L21/0332 ,  H01L21/31116 ,  H01L21/31144

Abstract: A method for manufacturing a semiconductor device includes forming, on a to-be-processed film above an underlying film, a mask material containing a first metal and comprising a first mask layer which is provided on the to-be-processed film and whose content of the first metal is lower than a first predetermined percentage, and a second mask layer which is provided on the first mask layer and whose content of the first metal is equal to or higher than the first predetermined percentage. The manufacturing method includes patterning the mask material. The manufacturing method includes processing the to-be-processed film using the mask material as a mask. The processing of the to-be-processed film includes performing a first treatment to process the to-be-processed film at a first temperature in an atmosphere of a first gas. The processing of the to-be-processed film includes performing a second treatment to process the to-be-processed film at a second temperature higher than the first temperature in an atmosphere of a second gas different from the first gas.

公开(公告)号：US20240096593A1

公开(公告)日：2024-03-21

申请号：US18450625

申请日：2023-08-16

Applicant: Kioxia Corporation

Inventor： Toshiyuki SASAKI

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32009 ,  H01J37/32449 ,  H01J37/3299 ,  H01L21/31116 ,  H01J2237/327 ,  H01J2237/334

Abstract: A plasma processing device includes a chamber, a plurality of direct current power supplies, and a controller. The direct current power supplies are provided in an upper portion and on a side wall of the chamber, wherein the direct current power supplies are configured to operate individually. The controller is configured to control the direct current power supplies such that the direct current power supplies apply respective direct current voltages independent of each other.