公开(公告)号：US20210066090A1

公开(公告)日：2021-03-04

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi HASHIMOTO ,  Kaori NARUMIYA ,  Kosuke HORIBE ,  Soichi YAMAZAKI ,  Kei WATANABE ,  Yusuke KONDO ,  Mitsuhiro OMURA ,  Takehiro KONDOH ,  Yuya MATSUBARA ,  Junya FUJITA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

公开(公告)号：US20230298868A1

公开(公告)日：2023-09-21

申请号：US17898168

申请日：2022-08-29

Applicant: KIOXIA CORPORATION

Inventor： Yusuke KONDO

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32724 ,  H01J37/32449 ,  H01L21/31116 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/24585 ,  H01J2237/182 ,  H01J37/32816 ,  H01J2237/3341

Abstract: According to one embodiment, a plasma treatment apparatus includes a substrate holder that holds a semiconductor substrate, a gas supply unit that supplies a mixed gas to a gas supply space formed between the semiconductor substrate and the substrate holder, a flow rate adjustment unit that adjusts a flow rate of different gases in the mixed gas, and a flow rate control unit. The mixed gas contains, for example, helium and argon, and the flow rate control that controls the flow rate adjustment unit to change the relative flow rates of helium and argon, or the like, to control a temperature of the substrate.

公开(公告)号：US20220301884A1

公开(公告)日：2022-09-22

申请号：US17462366

申请日：2021-08-31

Applicant: KIOXIA CORPORATION

Inventor： Yusuke KONDO ,  Soichi YAMAZAKI

IPC: H01L21/311 ,  H01L27/115 ,  H01J37/32 ,  C23C14/04 ,  C23C14/34 ,  C23C14/06

Abstract: A film forming apparatus includes an electrode, a target holder configured to hold a film forming target so as to face the electrode, and a masking shield holder configured to hold a masking shield between the electrode and the target holder. The masking shield includes a lattice portion having a plurality of openings therein and a frame portion supporting the lattice portion.

公开(公告)号：US20210257191A1

公开(公告)日：2021-08-19

申请号：US17011012

申请日：2020-09-03

Applicant: Kioxia Corporation

Inventor： Yusuke KONDO

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065

Abstract: According to one embodiment, a plasma processing apparatus includes a chamber configured to be depressurized; a holder configured to hold a substrate in the chamber; an electrode, provided on the holder, that is configured to generate a plasma above the holder; and a liquid supply configured to supply a non-volatile liquid to a surface of the holder.