公开(公告)号：US20230276627A1

公开(公告)日：2023-08-31

申请号：US17901606

申请日：2022-09-01

Applicant: Kioxia Corporation

Inventor： Takashi FUKUSHIMA ,  Kaihei KATOU ,  Kenichiro TORATANI ,  Ryota FUJITSUKA ,  Junya FUJITA ,  Atsushi FUKUMOTO ,  Motoki FUJII ,  Yuki WAKISAKA ,  Kazuya HATANO

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: A semiconductor device according to the present embodiment comprises a stack including a plurality of electrode films stacked in a first direction to be separated from each other. A column portion extends in the stack in the first direction and includes a semiconductor layer, and has memory cells at respective intersections of the semiconductor layer and the electrode films. A dividing portion extends in the stack in the first direction and a second direction crossing the first direction, divides the electrode films in a third direction crossing the first direction and the second direction, and includes an insulator. A first film is provided between the insulator and an end surface in the third direction of each of the electrode films and contains a first metal and silicon.

公开(公告)号：US20230178393A1

公开(公告)日：2023-06-08

申请号：US17837950

申请日：2022-06-10

Applicant: Kioxia Corporation

Inventor： Junya FUJITA ,  Takayuki MATSUI ,  Seiichi OMOTO

IPC: H01L21/67 ,  C23C16/455

CPC classification number: H01L21/67109 ,  C23C16/45548 ,  H01L21/67248

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, a heater configured to heat the substrate contained in the container, and an injector configured to feed gas to the substrate contained in the container. Furthermore, the injector includes a first layer having a tubular shape, and a second layer provided on a surface of the first layer, and having an emissivity of 0.5 or less.

公开(公告)号：US20220077184A1

公开(公告)日：2022-03-10

申请号：US17304260

申请日：2021-06-17

Applicant: Kioxia Corporation

Inventor： Atsushi FUKUMOTO ,  Junya FUJITA ,  Osamu ARISUMI ,  Fan WEN ,  Takayuki ITO

IPC: H01L27/11582 ,  H01L21/225

Abstract: A semiconductor device according to one embodiment includes a substrate, a wiring layer provided on the substrate and including source lines, a stacked body including a plurality of conductive layers and a plurality of insulating layers alternately stacked on the wiring layer, a cell film provided in the stacked body, a semiconductor film facing the cell film in the stacked body, and a diffusion film being in contact with the source lines in the wiring layer and being in contact with the semiconductor film in the stacked body. The diffusion film includes impurities and a top end portion of the diffusion film is at a higher position than a lowermost conductive layer among the conductive layers.

公开(公告)号：US20240203728A1

公开(公告)日：2024-06-20

申请号：US18536768

申请日：2023-12-12

Applicant: Kioxia Corporation

Inventor： Junya FUJITA ,  Satoshi YOSHIDA

IPC: H01L21/02

CPC classification number: H01L21/02211 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/0228

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes supplying first silane-based gas to a surface of a first film, the first silane-based gas being aminosilane-based gas. The method further includes supplying second silane-based gas to the surface of the first film, the second silane-based gas having a thermal decomposition temperature lower than a thermal decomposition temperature of the first silane-based gas. The method further includes supplying an oxidant to the surface of the first film to form a second film on the surface of the first film, the second film including silicon and oxygen.

公开(公告)号：US20210066090A1

公开(公告)日：2021-03-04

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi HASHIMOTO ,  Kaori NARUMIYA ,  Kosuke HORIBE ,  Soichi YAMAZAKI ,  Kei WATANABE ,  Yusuke KONDO ,  Mitsuhiro OMURA ,  Takehiro KONDOH ,  Yuya MATSUBARA ,  Junya FUJITA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.