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173 条记录 (耗时 0.022 秒)

    Method of manufacturing semiconductor device
    1.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08716130B2

    公开(公告)日：2014-05-06

    申请号：US13643102

    申请日：2011-04-04

    申请人： Kippei Sugita ,  Kenji Matsuda ,  Hiroyuki Hashimoto ,  Muneo Harada

    发明人： Kippei Sugita ,  Kenji Matsuda ,  Hiroyuki Hashimoto ,  Muneo Harada

    IPC分类号： H01L21/44

    CPC分类号： H01L21/283 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76898

    摘要： The method includes forming a hole penetrating from one surface of a substrate to an electrode formed on the other surface of the substrate; forming an organic insulating film in the hole; removing at least a part of the organic insulating film formed in a bottom portion of the hole and not the organic insulating film formed on a side wall portion of the hole, to expose the electrode; cleaning an exposed surface of the electrode by using plasma of an inert gas; filling a conductive metal in the hole; removing at least a part of a surface of the organic insulating film by the reaction of oxygen plasma; and annealing the substrate in a dysoxidative atmosphere.

    摘要翻译： 该方法包括形成从衬底的一个表面穿透到形成在衬底的另一个表面上的电极的孔; 在孔中形成有机绝缘膜; 除去形成在孔的底部的有机绝缘膜的至少一部分，而不是形成在孔的侧壁部上的有机绝缘膜，以露出电极; 通过使用惰性气体的等离子体清洁电极的暴露表面; 在孔中填充导电金属; 通过氧等离子体的反应去除有机绝缘膜的至少一部分表面; 并在氧化性气氛中退火底物。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20130089983A1

    公开(公告)日：2013-04-11

    申请号：US13643102

    申请日：2011-04-04

    申请人： Kippei Sugita ,  Kenji Matsuda ,  Hiroyuki Hashimoto ,  Muneo Harada

    发明人： Kippei Sugita ,  Kenji Matsuda ,  Hiroyuki Hashimoto ,  Muneo Harada

    IPC分类号： H01L21/283

    CPC分类号： H01L21/283 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76898

    摘要： The method includes forming a hole penetrating from one surface of a substrate to an electrode formed on the other surface of the substrate; forming an organic insulating film in the hole; removing at least a part of the organic insulating film formed in a bottom portion of the hole and not the organic insulating film formed on a side wall portion of the hole, to expose the electrode; cleaning an exposed surface of the electrode by using plasma of an inert gas; filling a conductive metal in the hole; removing at least a part of a surface of the organic insulating film by the reaction of oxygen plasma; and annealing the substrate in a dysoxidative atmosphere.

    摘要翻译： 该方法包括形成从衬底的一个表面穿透到形成在衬底的另一个表面上的电极的孔; 在孔中形成有机绝缘膜; 除去形成在孔的底部的有机绝缘膜的至少一部分，而不是形成在孔的侧壁部上的有机绝缘膜，以露出电极; 通过使用惰性气体的等离子体清洁电极的暴露表面; 在孔中填充导电金属; 通过氧等离子体的反应去除有机绝缘膜的至少一部分表面; 并在氧化性气氛中退火底物。

    APPARATUS FOR TREATING SURFACE AND METHOD OF TREATING SURFACE
    3.
    发明申请
    APPARATUS FOR TREATING SURFACE AND METHOD OF TREATING SURFACE 审中-公开
    用于处理表面的设备和处理表面的方法

    公开(公告)号：US20110003078A1

    公开(公告)日：2011-01-06

    申请号：US12921643

    申请日：2009-03-13

    申请人： Kippei Sugita ,  Hiroyuki Hashimoto ,  Muneo Harada

    发明人： Kippei Sugita ,  Hiroyuki Hashimoto ,  Muneo Harada

    IPC分类号： B05D3/10 ,  B05C11/11

    CPC分类号： H01L21/312 ,  B05D1/60 ,  B05D3/007 ,  B05D5/10 ,  H01L21/02126 ,  H01L21/02312

    摘要： An aqueous solution containing an adhesion promoter in an amount of 20 vol. % or more is heated and vaporized to a temperature of 80 to 100° C. to produce a water-containing adhesion promoter vapor, and the water-containing adhesion promoter vapor is adhered to and condensed on a surface of a substrate, to cause a heating and dehydrating reaction by which the adhesion promoter is adhered to the surface of the substrate.

    摘要翻译： 含有20体积％的粘合促进剂的水溶液 加热并蒸发％以上至80〜100℃的温度，生成含水粘合促进剂蒸气，将含水粘合促进剂蒸气粘附于基板表面并冷凝， 加热和脱水反应，其中粘附促进剂通过其附着到基材的表面。

    Acceleration sensor and inclination-detecting method
    7.
    发明申请
    Acceleration sensor and inclination-detecting method 失效
    加速度传感器和倾角检测方法

    公开(公告)号：US20060162450A1

    公开(公告)日：2006-07-27

    申请号：US10545088

    申请日：2004-02-10

    申请人： Muneo Harada ,  Naoki Ikeuchi ,  Hiroyuki Hashimoto

    发明人： Muneo Harada ,  Naoki Ikeuchi ,  Hiroyuki Hashimoto

    IPC分类号： G01P3/00

    CPC分类号： G01C9/06 ,  G01P15/123 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0842

    摘要： In an acceleration sensor detecting inclined displacement of a predetermined article from a basic position, the acceleration sensor (10) includes a sensor chip having a detection plane including one detection axis or two crossing detection axes detecting the inclined displacement. An axis orthogonal to the detection plane of the sensor chip is disposed in parallel with a standard plane of the article in the basic position. Then, the sensor chip obtains an output signal according to the inclined displacement of the standard plane.

    摘要翻译： 在加速度传感器检测预定物品从基本位置的倾斜位移时，加速度传感器（10）包括具有检测平面的传感器芯片，检测平面包括一个检测轴或检测倾斜位移的两个检测轴。 与传感器芯片的检测平面垂直的轴与基本位置的物品的标准平面平行设置。 然后，传感器芯片根据标准平面的倾斜位移获得输出信号。

    Acceleration sensor and inclination-detecting method
    10.
    发明授权
    Acceleration sensor and inclination-detecting method 失效
    加速度传感器和倾角检测方法

    公开(公告)号：US07428841B2

    公开(公告)日：2008-09-30

    申请号：US10545088

    申请日：2004-02-10

    申请人： Muneo Harada ,  Naoki Ikeuchi ,  Hiroyuki Hashimoto

    发明人： Muneo Harada ,  Naoki Ikeuchi ,  Hiroyuki Hashimoto

    IPC分类号： G01P3/00 ,  G01P1/02

    CPC分类号： G01C9/06 ,  G01P15/123 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0842

    摘要： In an acceleration sensor detecting inclined displacement of a predetermined article from a basic position, the acceleration sensor (10) includes a sensor chip having a detection plane including one detection axis or two crossing detection axes detecting the inclined displacement. An axis orthogonal to the detection plane of the sensor chip is disposed in parallel with a standard plane of the article in the basic position. Then, the sensor chip obtains an output signal according to the inclined displacement of the standard plane.

    摘要翻译： 在加速度传感器检测预定物品从基本位置的倾斜位移时，加速度传感器（10）包括具有检测平面的传感器芯片，检测平面包括一个检测轴或检测倾斜位移的两个检测轴。 与传感器芯片的检测平面垂直的轴与基本位置的物品的标准平面平行设置。 然后，传感器芯片根据标准平面的倾斜位移获得输出信号。