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    Semiconductor article with porous structure
    3.
    发明授权
    Semiconductor article with porous structure 有权
    具有多孔结构的半导体制品

    公开(公告)号：US06246068B1

    公开(公告)日：2001-06-12

    申请号：US09212432

    申请日：1998-12-16

    申请人： Nobuhiko Sato ,  Takao Yonehara ,  Kiyofumi Sakaguchi

    发明人： Nobuhiko Sato ,  Takao Yonehara ,  Kiyofumi Sakaguchi

    IPC分类号： H01L4700

    CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/3223 ,  H01L21/3226 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L31/1892 ,  Y02E10/50

    摘要： A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.

    摘要翻译： 提供了一种以高再现性制造平坦且质量高的SOI衬底的方法，同时用于通过再循环衬底构件实现资源节省和降低成本。 为了实现这一点，在Si衬底的至少一个表面上进行形成多孔Si层的多孔形成步骤，并且进行大孔隙层形成步骤以在多孔Si层中形成大孔隙率层。 通过将离子注入到具有给定投影范围的多孔Si层中或通过改变所述多孔形成步骤中的阳极氧化的电流密度来进行该大孔隙率层形成步骤。 此时，在多孔Si层上外延生长无孔单晶Si层。 此后，将多孔Si层和支撑基板的表面接合在一起，然后在具有大孔隙率的多孔Si层上进行分离。 随后，进行选择性蚀刻以去除多孔Si层。

    Substrate and production method thereof
    5.
    发明授权
    Substrate and production method thereof 失效
    基材及其制备方法

    公开(公告)号：US06221738B1

    公开(公告)日：2001-04-24

    申请号：US09046433

    申请日：1998-03-24

    申请人： Kiyofumi Sakaguchi ,  Nobuhiko Sato

    发明人： Kiyofumi Sakaguchi ,  Nobuhiko Sato

    IPC分类号： H01L2130

    CPC分类号： H01L21/2007

    摘要： There are provided a method of producing an SOI wafer of high quality with excellent controllability, productivity and economy and a wafer produced by such a method. In the method of producing a substrate utilizing wafer bonding, a first substrate member and a second substrate member are mutually bonded, and then the second substrate member is separated from the first substrate member at the interface of a first layer and a second layer formed on the main surface of the first substrate member, whereby the second layer is transferred onto the second substrate member. In the separation, the separation position at the interface of the first and the second layers is ensured by varying the porosity of a porous Si layer, forming an easily separable plane by the coagulation of pores in porous Si, effecting ion implantation to the interface or utilizing a heteroepitaxial interface.

    摘要翻译： 提供了一种制造具有优异的可控性，生产率和经济性的高质量的SOI晶片的方法和通过这种方法制造的晶片。 在利用晶片接合的基板的制造方法中，将第一基板部件和第二基板部件相互结合，然后将第二基板部件与第一基板部件在形成在第一基板部件 第一基板部件的主表面，由此将第二层转移到第二基板部件上。 在分离中，通过改变多孔Si层的孔隙率来确保第一层和第二层的界面处的分离位置，通过多孔Si中的孔的凝结形成容易分离的平面，进行离子注入界面或 利用异质外延界面。

    Member and member manufacturing method
    6.
    发明授权
    Member and member manufacturing method 失效
    会员制造方法

    公开(公告)号：US07049624B2

    公开(公告)日：2006-05-23

    申请号：US10838269

    申请日：2004-05-05

    申请人： Hajime Ikeda ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi

    发明人： Hajime Ikeda ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi

    IPC分类号： H01L47/00

    CPC分类号： H01L21/76259 ,  H01L21/306

    摘要： A porous structure with high uniformity is provided even when evaluated at a high resolution (high evaluation standard) of several or several ten nm or less. By applying this porous structure to the manufacture of an SOI substrate, an SOI substrate which has an SOI layer with a small number of defects is provided. In a region at a depth of 5 to 10 nm from the surface of a porous Si layer, values of parameters such as porosity and the like which represent a porous structure are uniformed. The manufacture of an SOI substrate using this porous Si layer reduces recessed defects in an SOI layer.

    摘要翻译： 即使以几个或几十纳米或更小的高分辨率（高评价标准）进行评估，也提供了高均匀性的多孔结构。 通过将这种多孔结构应用于SOI衬底的制造，提供了具有少量缺陷的SOI层的SOI衬底。 在多孔Si层的表面的深度为5〜10nm的区域中，表示多孔结构的孔隙率等参数的值均匀。 使用该多孔Si层的SOI衬底的制造减少SOI层中的凹陷缺陷。

    Semiconductor member, manufacturing method thereof, and semiconductor device
    9.
    发明授权
    Semiconductor member, manufacturing method thereof, and semiconductor device 失效
    半导体元件及其制造方法以及半导体器件

    公开(公告)号：US07750367B2

    公开(公告)日：2010-07-06

    申请号：US11711711

    申请日：2007-02-28

    申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

    发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

    IPC分类号： H01L29/165 ,  H01L29/786

    CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

    摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

    摘要翻译： SiGe层生长在硅衬底上。 通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 因此，可以获得具有高应变硅层的高质量半导体衬底。

    Semiconductor member, manufacturing method thereof, and semiconductor device
    10.
    发明申请
    Semiconductor member, manufacturing method thereof, and semiconductor device 失效
    半导体元件及其制造方法以及半导体器件

    公开(公告)号：US20070272944A1

    公开(公告)日：2007-11-29

    申请号：US11711711

    申请日：2007-02-28

    申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

    发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

    IPC分类号： H01L31/00

    CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

    摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

    摘要翻译： SiGe层生长在硅衬底上。 通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 因此，可以获得具有高应变硅层的高质量半导体衬底。