公开(公告)号：US4736085A

公开(公告)日：1988-04-05

申请号：US642686

申请日：1984-08-07

申请人： Kiyoshi Inoue ,  Jun Hayakawa ,  Sadao Sano

发明人： Kiyoshi Inoue ,  Jun Hayakawa ,  Sadao Sano

IPC分类号： B23H7/10 ,  B23H7/04

CPC分类号： B23H7/10

摘要： A wire-cut electric discharge machine in which a current supplying member is in direct contact with a wire electrode, the shape of the current supplying member and the direction of passage of the wire electrode before and after the member being adapted to each other to prevent the formation of narrow gaps of sharp wedge-shaped cross section which could lead to harmful discharge and damage to the wire electrode and possible breakage of the wire electrode. In a preferred embodiment the current supplying member has a thick heel portion and a narrow sole portion and cooling fluid is discharged against the narrow sole portion.

摘要翻译： PCT No.PCT / JP83 / 00432 Sec。 371日期1984年8月7日 102（e）日期1984年8月7日PCT提交1983年12月7日PCT公布。 公开号WO84 / 02297 日期：1984年6月21日。一种线切割放电机，其中电流供给部件与线电极直接接触，电流供给部件的形状和电极前后方向 相互适应以防止形成尖锐的楔形横截面的狭窄间隙，这可能导致有害的放电和损坏线电极以及可能的线电极断裂。 在优选实施例中，电流供应构件具有较厚的后跟部分和窄的鞋底部分，并且冷却流体抵靠窄的鞋底部分排出。

公开(公告)号：US4575603A

公开(公告)日：1986-03-11

申请号：US587923

申请日：1984-03-09

申请人： Kiyoshi Inoue ,  Makoto Onoue ,  Sadao Sano ,  Jun Hayakawa

发明人： Kiyoshi Inoue ,  Makoto Onoue ,  Sadao Sano ,  Jun Hayakawa

IPC分类号： B23H7/10 ,  B23H7/36 ,  B23H7/02

CPC分类号： B23H7/101

摘要： A traveling-wire electroerosion apparatus using a first nozzle disposed at one side of a workpiece so as to coaxially surround the electrode wire moving into the workpiece for directing under a relatively low pressure a cutting liquid medium into a cutting zone in the workpiece and a second nozzle disposed at the other side of the workpiece so as to coaxially surround the electrode wire moving from the workpiece for directing under a relatively high pressure the cutting liquid medium into the cutting zone. A liquid flow guidance member, generally in the form of an annular disk or discus, is disposed at that one side of the workpiece and adjacent thereto so as to overlie at least a region of the cutting slot generated behind the advancing electrode wire, which region is adjacent the nozzle opening of the first nozzle. The flow guidance member has a liquid escape passage formed therein adjacent the said nozzle opening and a flow deflecting surface overlying the said region for impeding direct flow of the flushing liquid medium from the cutting slot and creating a high-velocity stream of the high-pressure cutting liquid medium from the second nozzle flowing through and out of that liquid escape passage.

摘要翻译： 一种行进电线电腐蚀装置，其使用设置在工件一侧的第一喷嘴，以便同轴地围绕移动到工件中的电极线，以将相对较低的压力下的切割液体介质引导到工件中的切割区域中， 喷嘴设置在工件的另一侧，以便同轴地围绕从工件移动的电极线，以在相对较高的压力下引导切割液体介质进入切割区域。 通常为环形盘或铁饼形式的液体流动引导构件设置在工件的一侧并与其相邻，以覆盖在前进电极线后面产生的切割槽的至少一个区域，该区域 邻近第一喷嘴的喷嘴开口。 流动引导构件具有邻近所述喷嘴开口形成的液体排出通道和覆盖所述区域的流动偏转表面，用于阻止冲洗液体介质从切割槽直接流动并产生高速流的高压流 从第二喷嘴切割液体介质流过和流出该液体逸出通道。

公开(公告)号：US08217477B2

公开(公告)日：2012-07-10

申请号：US12318243

申请日：2008-12-23

申请人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

发明人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque.

摘要翻译： 提供了具有较低功耗的可靠的非易失性存储器。 在构成磁存储单元的巨磁电阻器件或隧道磁阻器件中被磁化反并联或平行于铁磁性钉扎层的磁化方向的铁磁互连连接到铁磁自由层，其中非磁性层插入 作为记录层的铁磁自由层之间。 由此，通过使用自旋转移转矩来切换记录层的磁化。

公开(公告)号：US07348589B2

公开(公告)日：2008-03-25

申请号：US11213918

申请日：2005-08-30

申请人： Jun Hayakawa ,  Hideo Ohno

发明人： Jun Hayakawa ,  Hideo Ohno

IPC分类号： H01L47/00

CPC分类号： G11C11/16

摘要： A highly integrated magnetic memory with low power consumption is provided. A first element portion which has a free layer, a first pinned layer formed in the film thickness direction of the free layer, and an insulation barrier layer formed between the free layer and the first pinned layer, and a second element portion which has the aforementioned free layer, a second pinned layer formed in the film surface direction of the free layer, and a non-magnetic layer formed between the free layer and the second pinned layer are provided. A current IW flows in the film surface direction of the second element portion for writing the magnetic information and a current IR flows in the film thickness direction of the first element portion for reading the magnetic information.

摘要翻译： 提供了低功耗高度集成的磁存储器。 具有自由层的第一元件部分，在自由层的膜厚度方向上形成的第一被钉扎层和形成在自由层和第一被钉扎层之间的绝缘阻挡层，以及具有上述第一元件部分的第二元件部分 自由层，在自由层的膜表面方向上形成的第二被钉扎层和形成在自由层和第二钉扎层之间的非磁性层。 在第二元件部分的薄膜表面方向上流动电流I 以写入磁信息，并且电流I SUB在第一元件部分的膜厚度方向上流动 用于读取磁信息。

公开(公告)号：US07203090B2

公开(公告)日：2007-04-10

申请号：US11488719

申请日：2006-07-19

申请人： Jun Hayakawa

发明人： Jun Hayakawa

IPC分类号： G11C11/15

CPC分类号： B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

摘要翻译： 磁存储器具有能够通过两个端子进行切换和磁化反转操作的高输出存储单元。 形成包括二极管，自旋转移转矩磁化反转感应层和隧道磁阻器件的MIS结层叠层。 位线和字线连接到层叠层。

公开(公告)号：US20070025029A1

公开(公告)日：2007-02-01

申请号：US11493892

申请日：2006-07-27

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L43/10

摘要： A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.

摘要翻译： 快速且功耗非常低的非易失性存储器。 非易失性磁存储器包括高输出隧道磁阻器件，其中使用自旋转移转矩来进行写入。 隧道磁阻器件具有这样的结构，使得包含Co，Fe和B的体心立方结构的铁磁膜，（100）中取向的岩盐结构的MgO绝缘膜和铁磁膜被堆叠。

公开(公告)号：US20060256614A1

公开(公告)日：2006-11-16

申请号：US11488719

申请日：2006-07-19

申请人： Jun Hayakawa

发明人： Jun Hayakawa

IPC分类号： G11C11/15

CPC分类号： B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

摘要翻译： 磁存储器具有能够通过两个端子进行切换和磁化反转操作的高输出存储单元。 形成包括二极管，自旋转移转矩磁化反转感应层和隧道磁阻器件的MIS结层叠层。 位线和字线连接到层叠层。

公开(公告)号：US07031111B2

公开(公告)日：2006-04-18

申请号：US10958326

申请日：2004-10-06

申请人： Jun Hayakawa

发明人： Jun Hayakawa

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3951 ,  G11B5/3967 ,  G11B5/553 ,  G11B5/59683 ,  G11B2005/0018 ,  H01F10/00 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3268

摘要： A ferromagnetic tunnel magnetoresistive film is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage applied to one of the tunnel junctions. By employing half-metallic ferromagnets in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.

摘要翻译： 铁磁隧道磁阻膜与高输出相关联，并且其磁阻比不太依赖于偏置电压。 在三端铁磁隧道磁阻元件中，通过施加到一个隧道结的偏压来抑制输出的减小。 通过在元件中采用半金属铁磁体，可以提高输出，并且可以降低对施加的偏置电压的依赖性。

公开(公告)号：US06934133B2

公开(公告)日：2005-08-23

申请号：US10374089

申请日：2003-02-27

申请人： Jun Hayakawa ,  Kenchi Ito

发明人： Jun Hayakawa ,  Kenchi Ito

IPC分类号： G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909

摘要： A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.

摘要翻译： 提供能够提供高输出和大输出电流的三端子磁阻头。 将由磁性半导体，金属磁性多层膜和隧道磁阻元件构成的MIS结多层膜应用于三端子磁阻器件。

公开(公告)号：US06842368B2

公开(公告)日：2005-01-11

申请号：US10842572

申请日：2004-05-11

申请人： Jun Hayakawa

发明人： Jun Hayakawa

IPC分类号： G11C11/15 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10

CPC分类号： B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.