公开(公告)号：US08217477B2

公开(公告)日：2012-07-10

申请号：US12318243

申请日：2008-12-23

申请人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

发明人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque.

摘要翻译： 提供了具有较低功耗的可靠的非易失性存储器。 在构成磁存储单元的巨磁电阻器件或隧道磁阻器件中被磁化反并联或平行于铁磁性钉扎层的磁化方向的铁磁互连连接到铁磁自由层，其中非磁性层插入 作为记录层的铁磁自由层之间。 由此，通过使用自旋转移转矩来切换记录层的磁化。

公开(公告)号：US07348589B2

公开(公告)日：2008-03-25

申请号：US11213918

申请日：2005-08-30

申请人： Jun Hayakawa ,  Hideo Ohno

发明人： Jun Hayakawa ,  Hideo Ohno

IPC分类号： H01L47/00

CPC分类号： G11C11/16

摘要： A highly integrated magnetic memory with low power consumption is provided. A first element portion which has a free layer, a first pinned layer formed in the film thickness direction of the free layer, and an insulation barrier layer formed between the free layer and the first pinned layer, and a second element portion which has the aforementioned free layer, a second pinned layer formed in the film surface direction of the free layer, and a non-magnetic layer formed between the free layer and the second pinned layer are provided. A current IW flows in the film surface direction of the second element portion for writing the magnetic information and a current IR flows in the film thickness direction of the first element portion for reading the magnetic information.

摘要翻译： 提供了低功耗高度集成的磁存储器。 具有自由层的第一元件部分，在自由层的膜厚度方向上形成的第一被钉扎层和形成在自由层和第一被钉扎层之间的绝缘阻挡层，以及具有上述第一元件部分的第二元件部分 自由层，在自由层的膜表面方向上形成的第二被钉扎层和形成在自由层和第二钉扎层之间的非磁性层。 在第二元件部分的薄膜表面方向上流动电流I 以写入磁信息，并且电流I SUB在第一元件部分的膜厚度方向上流动 用于读取磁信息。

公开(公告)号：US07203090B2

公开(公告)日：2007-04-10

申请号：US11488719

申请日：2006-07-19

申请人： Jun Hayakawa

发明人： Jun Hayakawa

IPC分类号： G11C11/15

CPC分类号： B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

摘要翻译： 磁存储器具有能够通过两个端子进行切换和磁化反转操作的高输出存储单元。 形成包括二极管，自旋转移转矩磁化反转感应层和隧道磁阻器件的MIS结层叠层。 位线和字线连接到层叠层。

公开(公告)号：US20070025029A1

公开(公告)日：2007-02-01

申请号：US11493892

申请日：2006-07-27

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L43/10

摘要： A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.

摘要翻译： 快速且功耗非常低的非易失性存储器。 非易失性磁存储器包括高输出隧道磁阻器件，其中使用自旋转移转矩来进行写入。 隧道磁阻器件具有这样的结构，使得包含Co，Fe和B的体心立方结构的铁磁膜，（100）中取向的岩盐结构的MgO绝缘膜和铁磁膜被堆叠。

公开(公告)号：US20060256614A1

公开(公告)日：2006-11-16

申请号：US11488719

申请日：2006-07-19

申请人： Jun Hayakawa

发明人： Jun Hayakawa

IPC分类号： G11C11/15

CPC分类号： B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

摘要翻译： 磁存储器具有能够通过两个端子进行切换和磁化反转操作的高输出存储单元。 形成包括二极管，自旋转移转矩磁化反转感应层和隧道磁阻器件的MIS结层叠层。 位线和字线连接到层叠层。

公开(公告)号：US07031111B2

公开(公告)日：2006-04-18

申请号：US10958326

申请日：2004-10-06

申请人： Jun Hayakawa

发明人： Jun Hayakawa

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3951 ,  G11B5/3967 ,  G11B5/553 ,  G11B5/59683 ,  G11B2005/0018 ,  H01F10/00 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3268

摘要： A ferromagnetic tunnel magnetoresistive film is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage applied to one of the tunnel junctions. By employing half-metallic ferromagnets in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.

摘要翻译： 铁磁隧道磁阻膜与高输出相关联，并且其磁阻比不太依赖于偏置电压。 在三端铁磁隧道磁阻元件中，通过施加到一个隧道结的偏压来抑制输出的减小。 通过在元件中采用半金属铁磁体，可以提高输出，并且可以降低对施加的偏置电压的依赖性。

公开(公告)号：US06934133B2

公开(公告)日：2005-08-23

申请号：US10374089

申请日：2003-02-27

申请人： Jun Hayakawa ,  Kenchi Ito

发明人： Jun Hayakawa ,  Kenchi Ito

IPC分类号： G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909

摘要： A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.

摘要翻译： 提供能够提供高输出和大输出电流的三端子磁阻头。 将由磁性半导体，金属磁性多层膜和隧道磁阻元件构成的MIS结多层膜应用于三端子磁阻器件。

公开(公告)号：US06842368B2

公开(公告)日：2005-01-11

申请号：US10842572

申请日：2004-05-11

申请人： Jun Hayakawa

发明人： Jun Hayakawa

IPC分类号： G11C11/15 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10

CPC分类号： B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

公开(公告)号：US06696668B2

公开(公告)日：2004-02-24

申请号：US09832894

申请日：2001-04-12

申请人： Jun Hayakawa

发明人： Jun Hayakawa

IPC分类号： B23K2602

CPC分类号： H01R43/0256 ,  B23K1/0056 ,  B23K26/032 ,  B23K37/0258 ,  B25J9/1697 ,  G05B2219/37555 ,  G05B2219/37563 ,  G05B2219/37572 ,  G05B2219/40611 ,  G05B2219/45165 ,  H01R43/0263 ,  H05K3/3447 ,  H05K3/3494

摘要： An image pickup camera is mounted on a soldering head for projecting a laser beam in such a manner that its optical axis coincides with that of the laser beam. An image of the object to be soldered, which is taken by the camera, is displayed on a monitor screen, and a projection spot, which is positioned on an optical axis of the laser beam, is displayed on the screen. While the positional relationship between the object to be soldered and the projection spot is observed on the monitor screen, the soldering head and the object to be soldered are moved relative to each other and the projection spot is positioned. Subsequently, the laser beam is projected from the soldering head, thus, performing soldering.

摘要翻译： 摄像摄像机安装在焊接头上，用于以使其光轴与激光束的光轴重合的方式投射激光束。 由摄像机拍摄的被焊接物体的图像被显示在监视器屏幕上，并且位于激光束的光轴上的投影点被显示在屏幕上。 虽然在监视器屏幕上观察到要焊接的物体与投影点之间的位置关系，但是焊接头和待焊接的物体相对于彼此移动并且投影点被定位。 随后，激光束从焊接头突出，从而进行焊接。

公开(公告)号：US06177438B1

公开(公告)日：2001-01-23

申请号：US08754750

申请日：1996-11-21

申请人： Hiroshi Nagase ,  Jun Hayakawa ,  Kuniaki Kawamura ,  Koji Kawai ,  Takashi Endoh

发明人： Hiroshi Nagase ,  Jun Hayakawa ,  Kuniaki Kawamura ,  Koji Kawai ,  Takashi Endoh

IPC分类号： C07D49108

CPC分类号： C07D489/08 ,  C07D489/00

摘要： A morphinan derivative or its pharmaceutically acceptable acid addition salt represented with, for example, and an analgesic, diuretic, antitussive and brain cell protector having its derivative or its salt as the active ingredient are described. The compound of the present invention possesses strong analgesic activity, diuretic action and antitussive action as a highly selective &kgr;-opioid agonist, allowing it to be used as a useful analgesic, diuretic and antitussive. On the other hand, the compound of the present invention also possesses remarkable cerebro-neuroprotective activity, thus allowing it be used as a useful cerebro-neuroprotective agents.

摘要翻译： 描述了以其衍生物或其盐作为活性成分代表的吗啡喃衍生物或其药学上可接受的酸加成盐和镇痛药，利尿剂，镇咳药和脑细胞保护剂。本发明化合物具有强的止痛活性 ，利尿作用和镇咳作用作为高度选择性的κ-阿片样物质激动剂，使其可用作有用的止痛剂，利尿剂和镇咳药。 另一方面，本发明的化合物也具有显着的脑血管保护作用，因此可用作有用的脑血管保护剂。