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83 条记录 (耗时 0.027 秒)

    Self-alignment scheme for enhancement of CPP-GMR
    2.
    发明授权
    Self-alignment scheme for enhancement of CPP-GMR 失效
    用于增强CPP-GMR的自对准方案

    公开(公告)号：US07118680B2

    公开(公告)日：2006-10-10

    申请号：US10718372

    申请日：2003-11-20

    申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    IPC分类号： G11B5/39

    CPC分类号： G11B5/1278 ,  Y10T29/49052

    摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

    摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

    Protective layer for continuous GMR design using reverse photo mask
    6.
    发明授权
    Protective layer for continuous GMR design using reverse photo mask 失效
    使用反光掩模进行连续GMR设计的保护层

    公开(公告)号：US06447689B1

    公开(公告)日：2002-09-10

    申请号：US09584424

    申请日：2000-06-05

    申请人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

    发明人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F41/308

    摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer is in place at the time that photoresist (used to define the location of the spin valve relative to the buried leads and longitudinal bias layers) is removed. The protective layer is later removed as a natural byproduct of surface cleanup just prior to the formation of the spin valve itself.

    摘要翻译： 公开了一种制造具有埋地引线的自旋阀结构的改进方法。 一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。 该保护层在光刻胶（用于限定自旋阀相对于埋入引线和纵向偏置层的位置）被去除时就位。 在形成自旋阀本身之前，保护层随后被除去，作为表面清洁的天然副产物。

    Protective layer for continuous GMR design
    7.
    发明授权
    Protective layer for continuous GMR design 失效
    连续GMR设计的保护层

    公开(公告)号：US06428714B1

    公开(公告)日：2002-08-06

    申请号：US09584426

    申请日：2000-06-05

    申请人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

    发明人： Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Kochan Ju ,  Jei-Wei Chang

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F41/308

    摘要： An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer remains in place while the buried leads as well as longitudinal bias means are formed. Processing includes use of photoresist liftoff. The protective layer is removed as a natural byproduct of surface cleanup just prior the formation of the spin valve.

    摘要翻译： 公开了一种制造具有埋地引线的自旋阀结构的改进方法。 一个关键特征是在自旋阀结构将在其上生长的种子层上包含临时保护层的过程。 该保护层保持原位，同时形成埋入引线以及纵向偏置装置。 处理包括使用光致抗蚀剂剥离。 在形成自旋阀之前，保护层作为表面清洁的天然副产物被去除。

    Electrochemical method to improve MR reader edge definition and device reliability
    8.
    发明授权
    Electrochemical method to improve MR reader edge definition and device reliability 失效
    电化学方法提高MR读取器边缘定义和器件可靠性

    公开(公告)号：US06287476B1

    公开(公告)日：2001-09-11

    申请号：US09332429

    申请日：1999-06-14

    申请人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

    发明人： Kochan Ju ,  Shou-Chen Kao ,  Cherng-Chyi Han ,  Jei-Wei Chang ,  Mao-Min Chen

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/09 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996

    摘要： A method to form a passivation layer using an electrochemical process over a MR Sensor so that the passivation layer defines the MR track width. The passivation layer is formed by anodizing the MR sensor. The passivation layer is an electrical insulator (preventing Sensor current (I) from shunting through the overspray) and a heat conductor to allow MR heat to dissipate away from the MR sensor through the overspray. The method comprises: forming a passivation layer on the MR sensor; the passivation layer formed using an electrochemical process. Then we spinning-on and printing a lift-off photoresist structure over the passivation layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure thereby defining a track width of the MR sensor. Then we deposit a lead layer over the passivation layer and MR sensor. The lift-off structure is removed where by the passivation layer defines a track width. The passivation layer is an electrical insulator that prevents sensor current (I) form shunting through overspray layers while allowing heat to dissipate through to the lead layer.

    摘要翻译： 使用MR传感器上的电化学过程形成钝化层的方法，使得钝化层限定MR磁道宽度。 通过阳极氧化MR传感器形成钝化层。 钝化层是电绝缘体（防止传感器电流（I）通过过喷）分流）和热导体，以允许MR热量通过过喷器散射离开MR传感器。 该方法包括：在MR传感器上形成钝化层; 使用电化学工艺形成钝化层。 然后我们旋转并在钝化层上印刷剥离光致抗蚀剂结构。 蚀刻钝化层以除去未被剥离结构覆盖的钝化层，从而限定MR传感器的轨道宽度。 然后我们在钝化层和MR传感器上沉积铅层。 去除剥离结构，其中钝化层限定轨道宽度。 钝化层是电绝缘体，其防止传感器电流（I）通过过喷层形成分流，同时允许热量散发到引线层。

    Plated flat metal gap for very narrow recording heads
    9.
    发明授权
    Plated flat metal gap for very narrow recording heads 失效
    用于非常窄的记录头的镀金属间隙

    公开(公告)号：US06218080B1

    公开(公告)日：2001-04-17

    申请号：US09519610

    申请日：2000-03-06

    申请人： Xuehua Wu ,  Kochan Ju ,  Jei-Wei Chang

    发明人： Xuehua Wu ,  Kochan Ju ,  Jei-Wei Chang

    IPC分类号： G11B523

    CPC分类号： C25D1/10 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49032

    摘要： It has been observed that plated structures grown inside molds for small objects, such as a gap structure in a magnetic read head, often have curved rather than planar surfaces. This problem has been overcome as follows. Prior to laying down photoresist for the mold, a layer of copper is deposited on the substrate on which the head structure is to be grown (normally the shared pole). After the photoresist is patterned to form the mold, all exposed copper is selectively removed from the substrate a key feature being that the copper is over-etched so that some undercutting of the photoresist occurs. Then, when the layers making up the gap structure are electrodeposited inside the mold they grow away from the substrate as planar surfaces.

    摘要翻译： 已经观察到，用于小物体的模具内生长的电镀结构，例如磁读头中的间隙结构，通常具有弯曲而不是平面。 这个问题已被克服如下。 在为模具铺设光致抗蚀剂之前，在要在其上生长头部结构的基底（通常是共享极）上沉积一层铜。 在光致抗蚀剂被图案化以形成模具之后，从衬底中选择性地去除所有暴露的铜，其关键特征是铜被过度蚀刻，使得发生光刻胶的一些底切。 然后，当构成间隙结构的层电沉积在模具内部时，它们作为平面表面从衬底生长。