公开(公告)号：US07420780B2

公开(公告)日：2008-09-02

申请号：US11435053

申请日：2006-05-16

申请人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

发明人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/187 ,  G11B5/245 ,  G11B5/3156 ,  G11B5/465 ,  Y10T29/49032 ,  Y10T29/49043

摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.

摘要翻译： 单写磁极往往具有大的形状各向异性，这在实际写入时导致非常大的残余磁场。 现在已经通过给写磁极制成三层层叠体的形式来消除这种情况，其中两个铁磁层被非磁性或反铁磁性耦合层分开。 外层之间的强静磁耦合使得它们的磁化方向自动地相互反平行，除非由更强大的写入场来克服，使结构具有低的净磁矩。 中间层的厚度必须仔细控制。

公开(公告)号：US20060203382A1

公开(公告)日：2006-09-14

申请号：US11435053

申请日：2006-05-16

申请人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

发明人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/187 ,  G11B5/245 ,  G11B5/3156 ,  G11B5/465 ,  Y10T29/49032 ,  Y10T29/49043

摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.

摘要翻译： 单写磁极往往具有大的形状各向异性，这在实际写入时导致非常大的残余磁场。 现在已经通过给写磁极制成三层层叠体的形式来消除这种情况，其中两个铁磁层被非磁性或反铁磁性耦合层分开。 外层之间的强静磁耦合使得它们的磁化方向自动地相互反平行，除非由更强大的写入场来克服，使结构具有低的净磁矩。 中间层的厚度必须仔细控制。

公开(公告)号：US07064924B2

公开(公告)日：2006-06-20

申请号：US10610036

申请日：2003-06-30

申请人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

发明人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

IPC分类号： G11B5/147

CPC分类号： G11B5/1278 ,  G11B5/187 ,  G11B5/245 ,  G11B5/3156 ,  G11B5/465 ,  Y10T29/49032 ,  Y10T29/49043

摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.

公开(公告)号：US07279269B2

公开(公告)日：2007-10-09

申请号：US10734422

申请日：2003-12-12

申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

IPC分类号： G11B5/39

CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

公开(公告)号：US07016168B2

公开(公告)日：2006-03-21

申请号：US10718373

申请日：2003-11-20

申请人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

发明人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.

摘要翻译： 提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层， 在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。 传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其 种子层。

公开(公告)号：US20080050615A1

公开(公告)日：2008-02-28

申请号：US11901584

申请日：2007-09-18

申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

公开(公告)号：US20050111148A1

公开(公告)日：2005-05-26

申请号：US10718373

申请日：2003-11-20

申请人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

发明人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/17 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.

摘要翻译： 提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层， 在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。 传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其 种子层。

公开(公告)号：US07864490B2

公开(公告)日：2011-01-04

申请号：US11901584

申请日：2007-09-18

申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

公开(公告)号：US20050130070A1

公开(公告)日：2005-06-16

申请号：US10734422

申请日：2003-12-12

申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

IPC分类号： G03F7/00 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

公开(公告)号：US06759084B1

公开(公告)日：2004-07-06

申请号：US10455036

申请日：2003-06-05

申请人： Kochan Ju ,  Min Li ,  Simon Liao ,  Jeiwei Chang

发明人： Kochan Ju ,  Min Li ,  Simon Liao ,  Jeiwei Chang

IPC分类号： B05D512

CPC分类号： B82Y10/00 ,  G11B5/3163 ,  G11B5/3903

摘要： It is important for a CPP GMR read head that it have both high resistance as well as high cross-sectional area. This has been achieved by inserting a NOL (nano-oxide layer) though the middle of one or both of the two non-magnetic conductive layers. A key feature is that the NOL is formed by first depositing the conductive layer to about half its normal thickness. Then a metallic film is deposited thereon to a thickness that is low enough for it to still consist of individual islands. The latter are then fully oxidized without significantly oxidizing the conductive layer on which they lie. The remainder of the conductive layer is then deposited to a thickness sufficient to fully enclose the islands of oxide.

摘要翻译： 对于CPP GMR读取头，它具有高电阻和高横截面积是重要的。 这通过在两个非磁性导电层中的一个或两个的中间插入NOL（纳米氧化物层）来实现。 一个关键的特征是NOL通过首先将导电层沉积到其正常厚度的大约一半来形成。 然后将金属膜沉积在足够低的厚度上，以使它仍然由各个岛构成。 然后，后者完全氧化，而不会显着地氧化它们所在的导电层。 然后将导电层的其余部分沉积到足以完全包围氧化物岛的厚度。