Novel method to reduce void formation during trapezoidal write pole plating in perpendicular recording
    1.
    发明申请
    Novel method to reduce void formation during trapezoidal write pole plating in perpendicular recording 有权
    在垂直记录中减少梯形写入极电镀期间的空隙形成的新方法

    公开(公告)号:US20110011744A1

    公开(公告)日:2011-01-20

    申请号:US12460432

    申请日:2009-07-17

    IPC分类号: C25D7/00

    摘要: A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (−) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.

    摘要翻译: 公开了一种在PMR头中形成写极的方法,其涉及在成型层中形成开口。 在开口内和顶表面上形成保形钌籽晶层。 由CoFeNi制成的辅助层或其合金在种子层上形成为保形层。 通过在由激活时间控制的激活步骤期间施加( - )电流或电压,在电镀溶液中去除全部或部分辅助层。 此后,以(+)电流电镀磁性材料以填充开口,并且优选地具有与辅助层相同的CoFeNi组成。 该方法避免了Ru氧化,导致对CoFeNi的粘附不良,以及导致写入极杂质的表面活性剂含量升高。 通过形成具有改善的润湿性的种子层表面,可显着地减少电镀材料中的空隙。

    CPP head with parasitic shunting reduction
    2.
    发明授权
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号:US07864490B2

    公开(公告)日:2011-01-04

    申请号:US11901584

    申请日:2007-09-18

    IPC分类号: G11B5/33

    摘要: The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译: CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部,在较小的较低部分上来减小。 由于涉及亚微米尺寸,这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程,该掩模将确定顶部的形状。 然后开始离子束蚀刻,离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间,掩模近侧的所有材料都被蚀刻,但在远侧,只有在掩模阴影之外的材料被去除,因此根据光束的角度,下部的尺寸被控制,并且上部 部分精确地集中在其上。

    Reducing corrosion of carbon steel reboilers
    3.
    发明授权
    Reducing corrosion of carbon steel reboilers 失效
    减少碳钢再沸器的腐蚀

    公开(公告)号:US5639422A

    公开(公告)日:1997-06-17

    申请号:US691476

    申请日:1996-08-02

    IPC分类号: A62D3/00 C01B7/07 C23F11/04

    CPC分类号: C01B7/07

    摘要: Disclosed is a method of reducing the corrosion of a carbon steel reboiler in which a reboiler fluid containing nitrogen trichloride is heated to decompose the nitrogen trichloride. About 1 to about 100 ppm, based on the reboiler fluid weight, of a source of iodine, is added to the reboiler.

    摘要翻译: 公开了一种减少碳钢再沸器的腐蚀的方法,其中加热含有三氯化碳的再沸器流体以分解三氯化氮。 将约1至约100ppm(基于再沸器流体重量)的碘源加入到再沸器中。

    Copper plating method
    4.
    发明授权
    Copper plating method 有权
    镀铜方法

    公开(公告)号:US09103012B2

    公开(公告)日:2015-08-11

    申请号:US12931854

    申请日:2011-02-11

    摘要: A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.

    摘要翻译: 公开了一种在镀覆工艺期间激活铜籽晶层的方法,其包括施加由超声波雾化器产生的蒸气。 通电的蒸气滴包括水和弱的有机酸如乙酸,乳酸,柠檬酸,尿酸,草酸或甲酸,其蒸气压接近于水。 弱有机酸优选具有足够高的pKa以避免Cu蚀刻,但是足够的酸性以与高通量制造相容的速率除去氧化铜。 在一个实施方案中,将弱酸/水蒸汽施加到旋转碗中的基底上,然后在同一旋转碗中进行去离子水漂洗步骤。 改进的润湿性导致随后镀覆的铜膜的均匀性提高。 由于化学品消耗减少和产品产量提高,实现了大量的成本节约。

    Method to print photoresist lines with negative sidewalls
    6.
    发明申请
    Method to print photoresist lines with negative sidewalls 失效
    打印具有负侧壁的光刻胶线的方法

    公开(公告)号:US20070042299A1

    公开(公告)日:2007-02-22

    申请号:US11588574

    申请日:2006-10-27

    IPC分类号: G03C5/00

    摘要: It is very difficult to produce a negative wall angle from either negative or positive-tone chemically amplified resists, especially by e-beam lithography. This problem has now been overcome by first forming a photoresist pedestal in the conventional way, followed by flood exposing with electrons. Then, a second development treatment is given. This results in removal of additional material from the sidewalls, said removal being greatest at the substrate and least at the pedestal's top surface, resulting in negatively sloping sidewalls. Application of this method to a process for forming a pole tip for a vertical magnetic writer is also discussed.

    摘要翻译: 从负极或正音色化学放大抗蚀剂产生负的壁角是非常困难的,特别是通过电子束光刻。 现在已经通过首先以常规方式形成光致抗蚀剂基座,随后用电子暴露而克服了这个问题。 然后,给出第二次开发处理。 这导致从侧壁去除附加材料,所述去除在基底处至少在基座的顶表面处最大,导致负斜面的侧壁。 还讨论了该方法在用于形成用于垂直磁性写入器的极尖的处理中的应用。

    Ozone-assisted bi-layer lift-off stencil for narrow track CPP-GMR heads
    7.
    发明申请
    Ozone-assisted bi-layer lift-off stencil for narrow track CPP-GMR heads 失效
    用于窄轨CPP-GMR头的臭氧辅助双层剥离模板

    公开(公告)号:US20050233258A1

    公开(公告)日:2005-10-20

    申请号:US10827949

    申请日:2004-04-20

    IPC分类号: G03F7/00 G11B5/31

    CPC分类号: G11B5/3163

    摘要: A method for forming a bi-layer lift-off mask for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns. The mask layers are formed symmetrically on each other, each layer of the mask having a novel dog-bone shape and the lower mask layer being substantially undercut relative to the upper mask layer. The central portion of the lower mask layer forms a narrow ridge that maintains the upper mask layer at a fixed height above a substrate, thereby avoiding problems associated with bi-layer lift-off masks of the prior art. The method of forming the lower ridge requires a carefully controlled undercutting of the lower mask layer, which is accomplished by using an ozone-assisted oxidation process.

    摘要翻译: 一种形成用于制造轨道宽度小于0.1微米的GMR读取头传感器的双层剥离掩模的方法。 掩模层彼此对称地形成,每个掩模层具有新的狗骨形状,并且下掩模层相对于上掩模层基本上是底切的。 下掩模层的中心部分形成窄的脊,其将上掩模层保持在衬底上方的固定高度,从而避免了与现有技术的双层剥离掩模相关的问题。 形成下脊的方法需要仔细控制下掩模层的底切,这是通过使用臭氧辅助氧化工艺来实现的。

    Method to print photoresist lines with negative sidewalls
    8.
    发明申请
    Method to print photoresist lines with negative sidewalls 失效
    打印具有负侧壁的光刻胶线的方法

    公开(公告)号:US20050058952A1

    公开(公告)日:2005-03-17

    申请号:US10660914

    申请日:2003-09-12

    摘要: It is very difficult to produce a negative wall angle from either negative or positive-tone chemically amplified resists, especially by e-beam lithography. This problem has now been overcome by first forming a photoresist pedestal in the conventional way, followed by flood exposing with electrons. Then, a second development treatment is given. This results in removal of additional material from the sidewalls, said removal being greatest at the substrate and least at the pedestal's top surface, resulting in negatively sloping sidewalls. Application of this method to a process for forming a pole tip for a vertical magnetic writer is also discussed.

    摘要翻译: 从负极或正音色化学放大抗蚀剂产生负的壁角是非常困难的,特别是通过电子束光刻。 现在已经通过首先以常规方式形成光致抗蚀剂基座,随后用电子暴露而克服了这个问题。 然后,给出第二次开发处理。 这导致从侧壁去除附加材料,所述去除在基底处至少在基座的顶表面处最大,导致负斜面的侧壁。 还讨论了该方法在用于形成用于垂直磁性写入器的极尖的处理中的应用。

    Reactivation of deactivated anodes
    9.
    发明授权
    Reactivation of deactivated anodes 失效
    禁用的阳极的重新激活

    公开(公告)号:US6156185A

    公开(公告)日:2000-12-05

    申请号:US330616

    申请日:1999-06-11

    CPC分类号: C25B11/0484 C25B11/00

    摘要: Disclosed is a method of reactivating a deactivated anode that has a coating of a noble metal or noble metal oxide on a substrate. A coating of a noble metal is deposited on the anode electrolessly. The noble metal in the deposited coating can be platinum, palladium, iridium, rhodium, ruthenium, osmium, or a mixture thereof.

    摘要翻译: 公开了一种在基材上还原具有贵金属或贵金属氧化物涂层的失活阳极的方法。 在阳极上无电镀沉积贵金属涂层。 沉积涂层中的贵金属可以是铂,钯,铱,铑,钌,锇或它们的混合物。

    Paddle for electroplating for selectively depositing greater thickness
    10.
    发明授权
    Paddle for electroplating for selectively depositing greater thickness 有权
    用于选择性地沉积更大厚度的电镀用桨

    公开(公告)号:US08920616B2

    公开(公告)日:2014-12-30

    申请号:US13525510

    申请日:2012-06-18

    摘要: An electroplating method is disclosed that selectively deposits a greater thickness of a metal or alloy layer on a region of wafer that has a higher thickness loss during a subsequent chemical mechanical polish process. A paddle assembly has three rectangular sides joined at their edges to form a triangle shape from an end view, and a notch in a bottom side that faces a wafer during the plating process. The notch extends along second and third paddle sides to a height up to about 50% of the paddle thickness. The thickness in a K-block region that has two sides formed parallel to the wafer flat is selectively increased by aligning a first side of the paddle notch side directly over one K-block side and aligning a second notch side directly over a second K-block side during a paddle movement cycle. The notch may be rectangular shaped or tapered.

    摘要翻译: 公开了一种电镀方法,其在随后的化学机械抛光工艺期间选择性地在晶片的区域上沉积更大厚度的金属或合金层,该区域具有较高的厚度损失。 桨组件在其边缘处连接有三个矩形侧面以从端视图形成三角形形状,并且在电镀过程期间在底侧的面向晶片的凹口。 切口沿着第二和第三桨叶侧延伸到高达桨叶厚度的约50%的高度。 通过将桨式切口侧的第一侧直接对准一个K块侧并且将第二切口侧直接对准第二K形截面侧,从而选择性地增加具有平行于晶片平面的两侧的K块区域中的厚度。 在桨运动循环期间的侧面。 切口可以是矩形或锥形。