公开(公告)号：US07279269B2

公开(公告)日：2007-10-09

申请号：US10734422

申请日：2003-12-12

申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

IPC分类号： G11B5/39

CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

公开(公告)号：US07864490B2

公开(公告)日：2011-01-04

申请号：US11901584

申请日：2007-09-18

申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

公开(公告)号：US20050130070A1

公开(公告)日：2005-06-16

申请号：US10734422

申请日：2003-12-12

申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

IPC分类号： G03F7/00 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

公开(公告)号：US20080050615A1

公开(公告)日：2008-02-28

申请号：US11901584

申请日：2007-09-18

申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

公开(公告)号：US07016168B2

公开(公告)日：2006-03-21

申请号：US10718373

申请日：2003-11-20

申请人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

发明人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.

摘要翻译： 提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层， 在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。 传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其 种子层。

公开(公告)号：US07118680B2

公开(公告)日：2006-10-10

申请号：US10718372

申请日：2003-11-20

申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

IPC分类号： G11B5/39

CPC分类号： G11B5/1278 ,  Y10T29/49052

摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

公开(公告)号：US20050111143A1

公开(公告)日：2005-05-26

申请号：US10718372

申请日：2003-11-20

申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/1278 ,  Y10T29/49052

摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

公开(公告)号：US07420780B2

公开(公告)日：2008-09-02

申请号：US11435053

申请日：2006-05-16

申请人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

发明人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/187 ,  G11B5/245 ,  G11B5/3156 ,  G11B5/465 ,  Y10T29/49032 ,  Y10T29/49043

摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.

摘要翻译： 单写磁极往往具有大的形状各向异性，这在实际写入时导致非常大的残余磁场。 现在已经通过给写磁极制成三层层叠体的形式来消除这种情况，其中两个铁磁层被非磁性或反铁磁性耦合层分开。 外层之间的强静磁耦合使得它们的磁化方向自动地相互反平行，除非由更强大的写入场来克服，使结构具有低的净磁矩。 中间层的厚度必须仔细控制。

公开(公告)号：US20050111148A1

公开(公告)日：2005-05-26

申请号：US10718373

申请日：2003-11-20

申请人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

发明人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/17 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.

摘要翻译： 提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层， 在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。 传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其 种子层。

公开(公告)号：US20060203382A1

公开(公告)日：2006-09-14

申请号：US11435053

申请日：2006-05-16

申请人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

发明人： Kochan Ju ,  Lijie Guan ,  Jeiwei Chang ,  Min Li ,  Ben Hu

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/187 ,  G11B5/245 ,  G11B5/3156 ,  G11B5/465 ,  Y10T29/49032 ,  Y10T29/49043

摘要： Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antiferromagnetic coupling layer. Strong magnetostatic coupling between the outer layers causes their magnetization directions to automatically be antiparallel to one another, unless overcome by the more powerful write field, leaving the structure with a low net magnetic moment. The thickness of the middle layer must be carefully controlled.

摘要翻译： 单写磁极往往具有大的形状各向异性，这在实际写入时导致非常大的残余磁场。 现在已经通过给写磁极制成三层层叠体的形式来消除这种情况，其中两个铁磁层被非磁性或反铁磁性耦合层分开。 外层之间的强静磁耦合使得它们的磁化方向自动地相互反平行，除非由更强大的写入场来克服，使结构具有低的净磁矩。 中间层的厚度必须仔细控制。