摘要:
An acrylic shrinkable fiber that can be dyed at a low temperature, and has a high shrinkage percentage even after drying is provided. A dyeable acrylic shrinkable fiber comprising 50 to 99 parts by weight of a polymer (A) comprising 80 to 97 wt % of acrylonitrile, 0 to 2 wt % of a sulfonic acid group-containing monomer and 3 to 20 wt % of a monomer copolymerizable with the monomers; and 1 to 50 parts by weight of a polymer (B) comprising 0 to 89 wt % of acrylonitrile, 1 to 40 wt % of a sulfonic acid group-containing monomer and 10 to 99 wt % of a monomer copolymerizable with the monomers, wherein the polymers (A) and (B) are 100 parts by weight in total is provided.
摘要:
An increased number of colors can be assorted in the down hair part of a step pile fabric more easily than before by carrying out dry heat treatment of a pile fabric comprising an acrylic shrinkable fiber that can be dyed in a specific low-temperature region. There is provided a step pile fabric obtained by treating a pile fabric comprising an acrylic shrinkable fiber, which comprises comprising an acrylic copolymer comprising 0.5 to 10 wt % of a sulfonic acid group-containing monomer, dyed at 55 to 85° C., with dry heat at 110 to 150° C. for 20 minutes or less, the acrylic shrinkable fiber having a shrinkage percentage of 18% or more calculated by the following formula (1): Shrinkage percentage (%)=100×(1−Sa/Sb) (1)wherein Sb represents a pile length of the down hair component before the dry heat treatment, and Sa represents a pile length of the down hair part (component) after the dry heat treatment.
摘要:
An object of the present invention is to provide a dyeable acrylic shrinkable fiber that only slightly shrinks when dyed and has a high shrinkage percentage even after dyeing. By spinning an incompatible spinning solution, the above object can be achieved, and a dyeable acrylic shrinkable fiber that only slightly shrinks when dyed and has a high shrinkage percentage even after dyeing can be provided.
摘要:
A modacrylic shrinkable fiber according to the present invention is containing a polymer composition obtained by mixing 50 to 99 parts by weight of a polymer (A) containing 40 wt % to 80 wt % of acrylonitrile, 20 wt % to 60 wt % of a halogen-ontaining monomer and 0 wt % to 5 wt % of a sulfonic-acid-containing monomer, and 1 to 50 parts by weight of a polymer (B) containing 5 wt % to 70 wt % of acrylonitrile, 20 wt % to 94 wt % of an acrylic ester and 1 wt % to 40 wt % of a sulfonic-acid-containing monomer containing a methallylsulfonic acid or metal salts thereof or amine salts thereof, in which a total amount of the polymer (A) and the polymer (B) is 100 parts by weight. In this way, a modacrylic shrinkable fiber that has a favorable color development property after dyeing and a high shrinkage ratio even after dyeing is obtained.
摘要:
A modacrylic shrinkable fiber according to the present invention is containing a polymer composition obtained by mixing 50 to 99 parts by weight of a polymer (A) containing 40 wt % to 80 wt % of acrylonitrile, 20 wt % to 60 wt % of a halogen-ontaining monomer and 0 wt % to 5 wt % of a sulfonic-acid-containing monomer, and 1 to 50 parts by weight of a polymer (B) containing 5 wt % to 70 wt % of acrylonitrile, 20 wt % to 94 wt % of an acrylic ester and 1 wt % to 40 wt % of a sulfonic-acid-containing monomer containing a methallylsulfonic acid or metal salts thereof or amine salts thereof, in which a total amount of the polymer (A) and the polymer (B) is 100 parts by weight. In this way, a modacrylic shrinkable fiber that has a favorable color development property after dyeing and a high shrinkage ratio even after dyeing is obtained.
摘要:
A step pile fabric according to the present invention contains a non-shrinkable fiber, and a shrinkable fiber containing a modacrylic copolymer. A composition of the shrinkable fiber containing the modacrylic copolymer contains a polymer composition obtained by mixing i) 60 to 99 parts by weight of a copolymer (A) containing 35 wt % to 98 wt % of acrylonitrile, and 2 wt % to 65 wt % of a total amount of 0.5 wt % to 5.0 wt % of a sulfonic-group-containing monomer and other vinyl monomer, and ii) 1 to 40 parts by weight of a copolymer (B) containing 0 wt % to 90 wt % of acrylonitrile, 2 wt % to 40 wt % of a sulfonic-group-containing monomer, and 0 wt % to 80 wt % of other vinyl monomer containing no halogen. A dry heat shrinkage S of the shrinkable fiber at 130° C. for 5 minutes after dyeing is 15% to 40%. In this way, by performing dyeing using a cationic dye in a low-temperature region so as to suppress shrinkage during dyeing and performing a dry heat treatment after dyeing, a pile fabric with large height difference is provided.
摘要:
The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.
摘要:
A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
摘要:
Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.
摘要:
A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
摘要翻译:通过电介质板(6)将微波从天线(7)的平面天线部件辐射到处理室(1)中。 由此,从气体供给构件(3)供给到处理室(1)中的C 5 C 8 C 8气体被变更(激活)为等离子体,从而 在半导体晶片(W)上形成一定厚度的含氟碳膜。 每次进行在一个晶片上形成膜的成膜工艺时,进行清洗处理和预涂工序。 在清洁过程中,用氧气和氢气的等离子体清洁处理室的内部。 在预涂布过程中,将C 5 F 8 N气体变成等离子体,并且含氟碳的预涂膜比含氟 形成在成膜工艺中形成的碳膜。