公开(公告)号：US20100101834A1

公开(公告)日：2010-04-29

申请号：US12528667

申请日：2008-02-22

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura ,  Masahiro Nakamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura ,  Masahiro Nakamura

IPC分类号： H01B3/22 ,  H01B3/24 ,  B32B37/00

CPC分类号： H01L21/3127 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T156/10 ,  H01L2924/00

摘要： An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.

摘要翻译： 层间绝缘膜可以通过层叠含有Si原子的烃层和含有N原子的碳氟化合物层而制造，其中烃层含有H原子和C原子，其比例为 的C原子数与H原子数（H / C）成为0.8〜1.2。 层间绝缘膜使得可以抑制由热退火引起的漏电流的产生和膜收缩，并且具有低介电常数并且是稳定的。

公开(公告)号：US20100032844A1

公开(公告)日：2010-02-11

申请号：US12514173

申请日：2007-11-08

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L23/48

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

摘要翻译： 半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。 氟碳膜含氮，介电常数低，重现性好，稳定性好。

公开(公告)号：US07923819B2

公开(公告)日：2011-04-12

申请号：US12514173

申请日：2007-11-08

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L23/58

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

摘要翻译： 半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。 氟碳膜含氮，介电常数低，重现性好，稳定性好。

公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20110215384A1

公开(公告)日：2011-09-08

申请号：US12673550

申请日：2008-08-14

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L21/02255 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76835 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/53295 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/32145 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00

摘要： In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost.As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0≦x≦1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.

摘要翻译： 在包括浅沟槽元件隔离区域和多层结构的层间绝缘膜的半导体器件的制造工艺中，需要重复使用CMP，但是由于CMP本身是昂贵的，所以重复使用CMP是造成 增加制造成本。 作为用于浅沟槽（ST）元件隔离区域和/或最下层层间绝缘膜的绝缘膜，可以使用可通过旋涂进行涂覆的绝缘涂膜。 绝缘涂膜具有由（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x（其中n = 1至3和0＆nlE; x＆nlE; 1.0）表示的组成，并且具有不同相对介电常数k的膜 通过选择热处理条件形成。 可以通过将绝缘涂膜完全改性为SiO 2膜来形成STI元件隔离区域，而具有小相对介电常数k的层间绝缘膜可以通过将其转换为未完全改性的状态来形成。

公开(公告)号：US20110127075A1

公开(公告)日：2011-06-02

申请号：US12673543

申请日：2008-08-14

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

IPC分类号： H05K1/11 ,  H05K3/46 ,  H05K3/36 ,  H05K1/00

CPC分类号： H01L23/5329 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684 ,  H01L21/76897 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH3)nSiO2-n/2)x(SiO2)1-x (where n=1 to 3, x≦1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process.

摘要翻译： 包含介电常数（k）为2.5或更小并由通式（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x表示的一种或两种以上的氧化物的绝缘涂膜，其中 n = 1〜3，x＆lt; 1; 1）用于形成层间绝缘膜。 通过旋涂施加的绝缘涂膜是平坦的，没有反射下面的不均匀，并且热处理膜在Ra中的表面粗糙度为1nm以下，P-V值为20nm以下。 包含绝缘涂膜的层间绝缘膜可以具有布线结构和仅通过蚀刻形成的电极，而不需要CMP工艺。

公开(公告)号：US20100178775A1

公开(公告)日：2010-07-15

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： H01L21/465 ,  C23C16/00 ,  C23C16/511 ,  H01L21/469 ,  C23F1/00 ,  C23F1/08 ,  C23C16/455 ,  B28B1/44

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US08383194B2

公开(公告)日：2013-02-26

申请号：US11991475

申请日：2006-09-05

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

IPC分类号： B05D5/06 ,  B05C9/06

CPC分类号： H01L51/001 ,  C23C14/12 ,  C23C14/243 ,  C23C14/568 ,  H01L51/56

摘要： To provide a film forming apparatus capable of using an expensive organic EL raw material without waste and uniformly forming an organic EL film over a long period of time and a jig therefor.A plurality of ejection vessels are provided for a single raw material container section. A switcher is provided for carrying out switching from a piping system, which evaporates an organic EL raw material in the raw material container section and supplies it along with a carrier gas to one of the ejection vessels, to a piping system for another ejection vessel. In this manner, by supplying the organic EL raw material from the single raw material container section to the plurality of ejection vessels by switching, the use efficiency of the organic EL raw material can be improved.

摘要翻译： 本发明提供能够在不浪费的情况下使用昂贵的有机EL原料并且能够长时间均匀地形成有机EL膜的成膜装置及其夹具。 为单个原料容器部提供多个喷射容器。 提供了一种用于从管道系统进行切换的切换器，其蒸发原料容器部分中的有机EL原料并将其与载气一起供应到其中一个排出容器，用于另一喷射容器的管道系统。 以这种方式，通过将单一原料容器部分的有机EL原料通过切换提供给多个喷射容器，可以提高有机EL原料的使用效率。

公开(公告)号：US20120125376A1

公开(公告)日：2012-05-24

申请号：US13381424

申请日：2010-05-27

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Takenao Nemoto ,  Yoriyuki Murakawa ,  Kazuhiro Yoshikawa

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Takenao Nemoto ,  Yoriyuki Murakawa ,  Kazuhiro Yoshikawa

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  H01L21/6708 ,  H01L21/6838

摘要： A wet processing apparatus holds on a stage a substrate to be processed and carries out a wet treatment by rotating the stage. The substrate is held by the stage, with the center of the substrate being offset from the rotation center of the stage, using a Bernoulli chuck which causes an inert gas to flow to a back surface of the substrate, so that the substrate is eccentrically rotated along with the rotation of the stage. A first gas supply passage which is used for the Bernoulli chuck is provided at a rotation shaft portion in the stage and the stage is also provided with second gas supply passages which communicate with the first gas supply passage to thereby introduce the inert gas to the back surface of the substrate. The second gas supply passages are axisymmetric with respect to a central axis of the substrate.

摘要翻译： 湿式处理装置在待处理的基板的台上保持，并通过旋转台进行湿处理。 基板由载物台保持，其中基板的中心偏离载物台的旋转中心，使用伯努利卡盘，其使惰性气体流到基板的背面，使得基板偏心旋转 以及舞台的旋转。 用于伯努利卡盘的第一气体供给通道设置在舞台的旋转轴部分，舞台还设置有与第一气体供给通道连通的第二气体供给通道，从而将惰性气体引入到背部 基板的表面。 第二气体供给通道相对于基板的中心轴线是对称的。

公开(公告)号：US20090041929A1

公开(公告)日：2009-02-12

申请号：US11918006

申请日：2006-03-28

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

IPC分类号： B05D5/06 ,  C23C16/455

CPC分类号： C23C14/564 ,  C23C14/12 ,  C23C14/228 ,  C23C14/24 ,  H01L51/0008 ,  H01L51/0081 ,  H01L51/56

摘要： In an apparatus for film formation, constituted so that an organic EL molecular gas is ejected into an ejection vessel, a plurality of organic EL material vessels are provided together with a piping system for connecting the plurality of organic EL material vessels to the ejection vessel. The plurality of organic EL material vessels are selectively put into a supply state of organic EL molecules. The piping system is constructed so that the carrier gas is fed into each organic EL material vessel in such a manner that the pressure during film formation and the pressure during non-film formation are equal to each other. During non-film formation, the carrier gas is allowed to flow from one of the organic EL material vessels to other material vessel.

摘要翻译： 在用于成膜的装置中，有机EL分子气体被喷射到喷射容器中，多个有机EL材料容器与用于将多个有机EL材料容器连接到喷射容器的管道系统一起提供。 多个有机EL材料容器选择性地进入有机EL分子的供给状态。 管道系统被构造成使得载气以这样的方式被供给到每个有机EL材料容器中，使得成膜期间的压力和非成膜期间的压力彼此相等。 在非成膜期间，允许载气从有机EL材料容器之一流动到其他材料容器。