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    Nonvolatile semiconductor memory device
    1.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US07952909B2

    公开(公告)日：2011-05-31

    申请号：US12517025

    申请日：2007-11-05

    申请人： Kohji Inoue ,  Yasunari Hosoi ,  Shigeo Ohnishi ,  Nobuyoshi Awaya

    发明人： Kohji Inoue ,  Yasunari Hosoi ,  Shigeo Ohnishi ,  Nobuyoshi Awaya

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0007 ,  G11C13/0026 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633

    摘要： Provided is a nonvolatile semiconductor device capable of performing writing operations of different resistance changes for memory cells having variable resistive elements whose resistive characteristics are changed by voltage applications, individually and simultaneously. The device includes: a load resistive characteristic variable circuit for each bit line connected commonly with the memory cells on the same column for selecting one of two load resistive characteristics according to a first writing operation where the resistive characteristics of the variable resistive element to be written transit from a low resistance state to a high resistance state or a second writing operation where they transit reversely; and a writing voltage pulse application circuit for applying a first voltage pulse in a first writing operation and a second voltage pulse in a second writing operation to the memory cells to be written through the load resistive characteristic variable circuits and the bit limes.

    摘要翻译： 提供了一种非易失性半导体器件，其能够对具有可变电阻元件的存储单元进行不同的电阻变化的写入操作，该电阻元件的电阻特性单独并同时由电压应用而改变。 该装置包括：用于与同一列上的存储器单元共同连接的每个位线的负载电阻特性可变电路，用于根据要写入的可变电阻元件的电阻特性的第一写入操作来选择两个负载电阻特性中的一个 从低电阻状态转移到高电阻状态或其反向转发的第二写入操作; 以及写入电压脉冲施加电路，用于将第一写入操作中的第一电压脉冲和第二写入操作中的第二电压脉冲施加到要通过负载电阻特性可变电路和位灰分写入的存储单元。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    6.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号：US20100080037A1

    公开(公告)日：2010-04-01

    申请号：US12517025

    申请日：2007-11-05

    申请人： Kohji Inoue ,  Yasunari Nosor ,  Shigeo Ohnishi ,  Nobuyoshi Awaya

    发明人： Kohji Inoue ,  Yasunari Nosor ,  Shigeo Ohnishi ,  Nobuyoshi Awaya

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0007 ,  G11C13/0026 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633

    摘要： Provided is a nonvolatile semiconductor device capable of performing writing operations of different resistance changes for memory cells having variable resistive elements whose resistive characteristics are changed by voltage applications, individually and simultaneously. The device comprises: a load resistive characteristic variable circuit for each bit line connected commonly with the memory cells on the same column for selecting one of two load resistive characteristics according to a first writing operation where the resistive characteristics of the variable resistive element to be written transit from a low resistance state to a high resistance state or a second writing operation where they transit reversely; and a writing voltage pulse application circuit for applying a first voltage pulse in a first writing operation and a second voltage pulse in a second writing operation to the memory cells to be written through the load resistive characteristic variable circuits and the bit limes.

    摘要翻译： 提供了一种非易失性半导体器件，其能够对具有可变电阻元件的存储单元进行不同的电阻变化的写入操作，该电阻元件的电阻特性单独并同时由电压应用而改变。 该装置包括：用于与同一列上的存储器单元共同连接的每个位线的负载电阻特性可变电路，用于根据要写入的可变电阻元件的电阻特性的第一写入操作来选择两种负载电阻特性之一 从低电阻状态转移到高电阻状态或其反向转发的第二写入操作; 以及写入电压脉冲施加电路，用于将第一写入操作中的第一电压脉冲和第二写入操作中的第二电压脉冲施加到要通过负载电阻特性可变电路和位灰分写入的存储单元。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    7.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号：US20090273964A1

    公开(公告)日：2009-11-05

    申请号：US12515286

    申请日：2007-11-05

    申请人： Shinobu Yamazaki ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shinichi Sato ,  Kenichi Tanaka

    发明人： Shinobu Yamazaki ,  Yasunari Hosoi ,  Nobuyoshi Awaya ,  Shinichi Sato ,  Kenichi Tanaka

    IPC分类号： G11C11/00 ,  G11C7/00 ,  H01L29/47

    CPC分类号： H01L27/101 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/76 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1633

    摘要： A nonvolatile semiconductor memory device comprises: a two terminal structured variable resistive element, wherein resistive characteristics defined by current-voltage characteristics at both ends transit between low and high resistance states stably by applying a voltage satisfying predetermined conditions to the both ends, a transition from the low resistance state to the high resistance state occurs by applying a voltage of a first polarity whose absolute value is at or higher than a first threshold voltage, and the reverse transition occurs by applying a voltage of a second polarity whose absolute value is at or higher than a second threshold voltage; a load circuit connected to the variable resistive element in series having an adjustable load resistance; and a voltage generation circuit for applying a voltage to both ends of a serial circuit; wherein the variable resistive element can transit between the states by adjusting a resistance of the load circuit.

    摘要翻译： 非易失性半导体存储器件包括：二端结构可变电阻元件，其中由两端的电流 - 电压特性限定的电阻特性通过向两端施加满足预定条件的电压来稳定地在低电阻状态和高电阻状态之间转变， 通过施加绝对值等于或高于第一阈值电压的第一极性的电压而发生到高电阻状态的低电阻状态，并且通过施加绝对值为或等于或等于或等于或等于或等于或等于 高于第二阈值电压; 连接到具有可调负载电阻的串联可变电阻元件的负载电路; 以及用于向串联电路的两端施加电压的电压产生电路; 其中可变电阻元件可以通过调节负载电路的电阻在状态之间转变。

    Nonvolatile semiconductor memory device
    8.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US07433222B2

    公开(公告)日：2008-10-07

    申请号：US11647329

    申请日：2006-12-29

    申请人： Yasunari Hosoi ,  Nobuyoshi Awaya ,  Isao Inoue

    发明人： Yasunari Hosoi ,  Nobuyoshi Awaya ,  Isao Inoue

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0007 ,  G11C13/003 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/76 ,  G11C2213/79

    摘要： A nonvolatile semiconductor device is configured so that a load circuit applying voltage to a variable resistive element is provided electrically connecting in series to the variable resistive element, a load resistive characteristic of the load circuit can be switched between two different characteristics. The two load resistive characteristics are selectively switched depending on whether a resistive characteristic of the variable resistive element transits from low resistance state to high resistance state, or vice versa, voltage necessary for transition from one of the two resistive characteristics to the other is applied by applying writing voltage to a serial circuit of the variable resistive element and load circuit. After the resistive characteristic of the variable resistive element transits from one to the other, voltage applied to the variable resistive element does not allow a resistive characteristic to return from the other to one depending on the selected load resistive characteristic.

    摘要翻译： 非易失性半导体器件被配置为使得向可变电阻元件施加电压的负载电路被提供为电连接到可变电阻元件，负载电路的负载电阻特性可以在两个不同特性之间切换。 根据可变电阻元件的电阻特性是否从低电阻状态转变为高电阻状态，反之亦然，两个负载电阻特性被选择性地切换，或者反过来，通过两个电阻特性之一转换到另一个电阻特性所需的电压被施加 对可变电阻元件和负载电路的串联电路施加写入电压。 在可变电阻元件的电阻特性从一个转变到另一个之后，施加到可变电阻元件的电压根据所选择的负载电阻特性不允许电阻特性从另一个返回到一个。

    Driving method of variable resistance element and memory device
    9.
    发明授权
    Driving method of variable resistance element and memory device 有权
    可变电阻元件和存储器件的驱动方法

    公开(公告)号：US07236388B2

    公开(公告)日：2007-06-26

    申请号：US11169535

    申请日：2005-06-28

    申请人： Yasunari Hosoi ,  Yukio Tamai ,  Kazuya Ishihara ,  Shinji Kobayashi ,  Nobuyoshi Awaya

    发明人： Yasunari Hosoi ,  Yukio Tamai ,  Kazuya Ishihara ,  Shinji Kobayashi ,  Nobuyoshi Awaya

    IPC分类号： G11C11/00

    CPC分类号： G11C29/50 ,  G11C13/0007 ,  G11C13/0069 ,  G11C29/50008 ,  G11C2013/009 ,  G11C2213/31

    摘要： A variable resistance element is configured to be provided with a perovskite-type oxide between a first electrode and a second electrode, of which electric resistance between the first electrode and the second electrode is changed by applying a voltage pulse of a predetermined polarity between the first electrode and the second electrode, and the variable resistance element has a resistance hysteresis characteristic, in which a changing rate of a resistance value is changed from positive to negative with respect to increase of a cumulative pulse applying time in the application of the voltage pulse. The voltage pulse is applied to the variable resistance element so that the cumulative pulse applying time is not longer than a specific cumulative pulse applying time, in which the changing rate of the, resistance value is changed from positive to negative with respect to increase of the cumulative pulse applying time in the resistance hysteresis characteristic.

    摘要翻译： 可变电阻元件被配置为在第一电极和第二电极之间设置有钙钛矿型氧化物，其中通过在第一电极和第二电极之间施加预定极性的电压脉冲来改变第一电极和第二电极之间的电阻 电极和第二电极，并且可变电阻元件具有电阻滞后特性，其中电阻值的变化率相对于施加电压脉冲的累积脉冲施加时间的增加而从正变化到负。 电压脉冲被施加到可变电阻元件，使得累积脉冲施加时间不长于特定的累积脉冲施加时间，其中电阻值的变化率相对于增加的电阻值从正变化到负 累积脉冲施加时间在电阻滞后特性。

    Driving method of variable resistance element and memory device
    10.
    发明申请
    Driving method of variable resistance element and memory device 有权
    可变电阻元件和存储器件的驱动方法

    公开(公告)号：US20060002174A1

    公开(公告)日：2006-01-05

    申请号：US11169535

    申请日：2005-06-28

    申请人： Yasunari Hosoi ,  Yukio Tamai ,  Kazuya Ishihara ,  Shinji Kobayashi ,  Nobuyoshi Awaya

    发明人： Yasunari Hosoi ,  Yukio Tamai ,  Kazuya Ishihara ,  Shinji Kobayashi ,  Nobuyoshi Awaya

    IPC分类号： G11C11/00

    CPC分类号： G11C29/50 ,  G11C13/0007 ,  G11C13/0069 ,  G11C29/50008 ,  G11C2013/009 ,  G11C2213/31

    摘要： A variable resistance element is configured to be provided with a perovskite-type oxide between a first electrode and a second electrode, of which electric resistance between the first electrode and the second electrode is changed by applying a voltage pulse of a predetermined polarity between the first electrode and the second electrode, and the variable resistance element has a resistance hysteresis characteristic, in which a changing rate of a resistance value is changed from positive to negative with respect to increase of a cumulative pulse applying time in the application of the voltage pulse. The voltage pulse is applied to the variable resistance element so that the cumulative pulse applying time is not longer than a specific cumulative pulse applying time, in which the changing rate of the, resistance value is changed from positive to negative with respect to increase of the cumulative pulse applying time in the resistance hysteresis characteristic.

    摘要翻译： 可变电阻元件被配置为在第一电极和第二电极之间设置有钙钛矿型氧化物，其中通过在第一电极和第二电极之间施加预定极性的电压脉冲来改变第一电极和第二电极之间的电阻 电极和第二电极，并且可变电阻元件具有电阻滞后特性，其中电阻值的变化率相对于施加电压脉冲的累积脉冲施加时间的增加而从正变化到负。 电压脉冲被施加到可变电阻元件，使得累积脉冲施加时间不长于特定的累积脉冲施加时间，其中电阻值的变化率相对于增加的电阻值从正变化到负 累积脉冲施加时间在电阻滞后特性。