公开(公告)号：US07264037B2

公开(公告)日：2007-09-04

申请号：US10562457

申请日：2004-06-29

申请人： Koichi Kuroki ,  Takeshi Masaki ,  Hideaki Onda ,  Shinji Kazama ,  Tetsuya Muramatsu ,  Tetsuji Umemoto ,  Kenji Ohwada ,  Tomonori Taoka ,  Akira Noda ,  Hiromichi Baba ,  Kenichi Yasuda

发明人： Koichi Kuroki ,  Takeshi Masaki ,  Hideaki Onda ,  Shinji Kazama ,  Tetsuya Muramatsu ,  Tetsuji Umemoto ,  Kenji Ohwada ,  Tomonori Taoka ,  Akira Noda ,  Hiromichi Baba ,  Kenichi Yasuda

IPC分类号： B22D27/08 ,  B22D17/08 ,  B22D23/00 ,  B22D25/00

CPC分类号： B22D17/32 ,  B22D17/007 ,  B22D41/001 ,  Y10S164/90

摘要： Made up of a step of preparing a map expressing a correlation between solid phase percentage and viscosity of a slurry-form semi-solid metal (27) for a given metal composition; a step of setting a target viscosity corresponding to a target solid phase percentage using this map; a viscosity measuring step of measuring the viscosity of a semi-solid metal in a vessel (13) while cooling it; and a step of carrying out cooling until this viscosity reaches the target viscosity, by these steps being carried out in from the preparation of the map expressing the correlation between solid phase percentage and viscosity of the semi-solid metal to the end of cooling of the semi-solid metal the solid phase percentage of the semi-solid metal is made to match the target solid phase percentage. Because the viscosity is detected, the affects of cooling rate changes and time can be eliminated, and it is possible to raise management accuracy of the solid phase percentage of the semi-solid metal much further than with related art management based on time.

摘要翻译： 由制备表示给定金属组合物的浆状半固体金属（27）的固相百分比和粘度之间的相关性的图的步骤组成; 使用该图设定与目标固相百分比对应的目标粘度的步骤; 粘度测量步骤，用于在冷却时测量容器（13）中的半固体金属的粘度; 以及进行冷却直到该粘度达到目标粘度的步骤，通过这些步骤是从制备表示固体相的百分数和半固体金属的粘度与冷却结束之间的相关性的图表进行的 半固体金属使半固体金属的固相百分比与目标固相百分比相匹配。 由于检测到粘度，所以可以消除冷却速度变化和时间的影响，可以提高半固态金属的固相百分比的管理精度比基于时间的现有技术管理进一步提高。

公开(公告)号：US20060151137A1

公开(公告)日：2006-07-13

申请号：US10562457

申请日：2004-06-29

申请人： Koichi Kuroki ,  Takeshi Masaki ,  HIdeaki Onda ,  Shinji Kazama ,  Tetsuya Muramatsu ,  Tetsuji Umemoto ,  Kenji Ohwada ,  Tomonori Taoka ,  Akira Noda ,  Hiromichi Baba ,  Kenichi Yasuda

发明人： Koichi Kuroki ,  Takeshi Masaki ,  HIdeaki Onda ,  Shinji Kazama ,  Tetsuya Muramatsu ,  Tetsuji Umemoto ,  Kenji Ohwada ,  Tomonori Taoka ,  Akira Noda ,  Hiromichi Baba ,  Kenichi Yasuda

IPC分类号： B22D17/08 ,  B22D23/00 ,  B22D25/00

CPC分类号： B22D17/32 ,  B22D17/007 ,  B22D41/001 ,  Y10S164/90

摘要： Made up of a step of preparing a map expressing a correlation between solid phase percentage and viscosity of a slurry-form semi-solid metal (27) for a given metal composition; a step of setting a target viscosity corresponding to a target solid phase percentage using this map; a viscosity measuring step of measuring the viscosity of a semi-solid metal in a vessel (13) while cooling it; and a step of carrying out cooling until this viscosity reaches the target viscosity, by these steps being carried out in from the preparation of the map expressing the correlation between solid phase percentage and viscosity of the semi-solid metal to the end of cooling of the semi-solid metal the solid phase percentage of the semi-solid metal is made to match the target solid phase percentage. Because the viscosity is detected, the affects of cooling rate changes and time can be eliminated, and it is possible to raise management accuracy of the solid phase percentage of the semi-solid metal much further than with related art management based on time.

摘要翻译： 由制备表示给定金属组合物的浆状半固体金属（27）的固相百分比和粘度之间的相关性的图的步骤组成; 使用该图设定与目标固相百分比对应的目标粘度的步骤; 粘度测量步骤，用于在冷却时测量容器（13）中的半固体金属的粘度; 以及进行冷却直到该粘度达到目标粘度的步骤，这些步骤是从制备表示固体相的百分数和半固体金属的粘度与冷却结束之间的相关性的图表进行的 半固体金属使半固体金属的固相百分比与目标固相百分比相匹配。 由于检测到粘度，所以可以消除冷却速度变化和时间的影响，可以提高半固态金属的固相百分比的管理精度比基于时间的现有技术管理进一步提高。

公开(公告)号：US06544469B2

公开(公告)日：2003-04-08

申请号：US09736411

申请日：2000-12-15

申请人： Atsushi Suzuki ,  Kazuya Sakamoto ,  Kenji Ohwada ,  Tomonori Taoka ,  Koichi Kuroki ,  Takahiro Suenaga ,  Takashi Idegomori ,  Kenichi Katahira ,  Hideomi Ito ,  Akira Noda ,  Kazuaki Kobayashi ,  Masayoshi Kai ,  Shinji Kazama

发明人： Atsushi Suzuki ,  Kazuya Sakamoto ,  Kenji Ohwada ,  Tomonori Taoka ,  Koichi Kuroki ,  Takahiro Suenaga ,  Takashi Idegomori ,  Kenichi Katahira ,  Hideomi Ito ,  Akira Noda ,  Kazuaki Kobayashi ,  Masayoshi Kai ,  Shinji Kazama

IPC分类号： C21C542

CPC分类号： B22D17/007 ,  Y10S164/90

摘要： An apparatus for producing a metal formed product comprises a molten metal-holding furnace; a semisolidified metal-producing mechanism; a cooling member-restoring mechanism arranged adjacent to the semisolidified metal-producing mechanism, for applying a restoring treatment so that chillers have a desired function; a forming machine for forming semisolidified metal to have a predetermined shape; and an articulated robot capable of transporting a crucible to the molten metal-holding furnace, the semisolidified metal-producing mechanism, and the forming machine. The semisolidified metal-producing mechanism includes first to third agitators. The cooling member-restoring mechanism includes first to third treating sections. These components are arranged in a direction of back and forth movement of the articulated robot. Accordingly, it is possible to efficiently obtain the metal formed product having a high quality.

摘要翻译： 金属成型体的制造装置包括熔融金属保持炉; 半固态金属生产机制; 与半固体金属制造机构相邻设置的冷却部件恢复机构，用于进行恢复处理，使得冷却器具有期望的功能; 用于形成具有预定形状的半固化金属的成形机; 以及能够将坩埚输送到熔融金属保持炉，半固体金属制造机构和成形机的铰接式机器人。 半固态金属制造机构包括第一至第三搅拌器。 冷却部件恢复机构包括第一至第三处理部。 这些部件沿着铰接机器人的前后运动的方向排列。 因此，可以有效地获得具有高质量的金属成形产品。

公开(公告)号：US08815010B2

公开(公告)日：2014-08-26

申请号：US11587698

申请日：2005-02-15

申请人： Akira Noda ,  Ryuichi Hirano

发明人： Akira Noda ,  Ryuichi Hirano

IPC分类号： C01B25/08 ,  C30B15/10 ,  C30B27/02 ,  C01B25/00 ,  C30B15/00

CPC分类号： C30B27/02 ,  C30B15/00 ,  C30B15/22 ,  C30B29/40

摘要： A method for producing a low-dislocation InP single crystal suitably used for an optical device such as a semiconductor laser, and the low-dislocation InP single crystal wafer are provided. In a liquid-encapsulated Czochralski method in which a semiconductor raw material and an encapsulant are contained in a raw material melt containing part comprising a cylindrical crucible having a bottom, the raw material containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25° C./cm or less and setting a temperature-fall amount to 0.25° C./hr or more. Thus, an iron-doped or undoped InP single crystal wafer in which an area having a dislocation density of 500/cm2 or less occupies 70% or more is realized.

摘要翻译： 提供适合用于半导体激光器等光学元件的低位错InP单晶的制造方法和低位错InP单晶晶片。 在包含具有底部的圆柱形坩埚的原料熔融物的部件中含有半导体原料和密封剂的液体封装的切克劳斯法中，加热含有原料的部分，使原料熔融， 在被密封剂覆盖的状态下与原料的熔体的表面接触以在晶种升高的同时生长晶体; 通过将晶体生长方向的温度梯度设定为25℃/ cm以下，将温度下降量设定为0.25℃/小时以上，从晶种生长晶面部。 因此，实现了具有500 / cm 2以下的位错密度的面积占70％以上的铁掺杂或未掺杂的InP单晶晶片。

公开(公告)号：US20130029278A1

公开(公告)日：2013-01-31

申请号：US13638456

申请日：2011-03-11

申请人： Toshiaki Asahi ,  Akira Noda

发明人： Toshiaki Asahi ,  Akira Noda

IPC分类号： F27D3/00 ,  F27D9/00

CPC分类号： C22C1/02 ,  C30B11/002 ,  C30B29/48

摘要： Provided is a method for synthesizing group II-VI compound semiconductor polycrystals in which synthesis can be accomplished without the use of a quart ampoule as the polycrystal synthesis vessel, and as a result it is possible to use a larger vessel without reducing yield, and costs can thereby be reduced. Two or more starting elements are introduced to a semi-airtight pBN inner vessel (6a), the inner vessel is introduced to a semi-airtight heat-resistant outer vessel (6b) and placed in a high-pressure furnace (1) having a heating means (7), the air inside the high-pressure furnace is evacuated and the furnace is filled with an inert gas under a predetermined pressure, the outer vessel and inner vessel are heated and the temperature is raised using the heating means, the starting elements inside the inner vessel are melted and reacted, and the temperature is then gradually lowered to promote growth of polycrystals.

摘要翻译： 提供了合成可以不使用夸脱安瓿作为多晶合成容器的合成的II-VI族化合物半导体多晶体的方法，结果可以在不降低产率的情况下使用较大的容器，成本 从而可以减少。 将两个或更多个起始元件引入半气密pBN内部容器（6a）中，将内部容器引入半气密耐热外部容器（6b）并放置在具有 加热装置（7），将高压炉内的空气抽真空，在预定压力下对惰性气体进行充填，外部容器和内部容器被加热，并且使用加热装置升高温度，起动 内部容器内的元素熔化并反应，然后逐渐降低温度以促进多晶体的生长。

公开(公告)号：US06791257B1

公开(公告)日：2004-09-14

申请号：US09890774

申请日：2001-08-03

申请人： Kenji Sato ,  Atsutoshi Arakawa ,  Mikio Hanafusa ,  Akira Noda

发明人： Kenji Sato ,  Atsutoshi Arakawa ,  Mikio Hanafusa ,  Akira Noda

IPC分类号： H01J162

CPC分类号： H01L33/28 ,  H01L33/0008 ,  H01S5/3059 ,  H01S5/327

摘要： An electro luminescence device comprises a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table. It is produced by providing a substrate having a low dislocation density or a low inclusion density; forming a pn junction by thermally diffusing an element converting the substrate of a first conduction type into the one of a second conduction type from a front surface of the substrate; and forming electrodes on front and rear of the substrate. A diffusion source including an element converting the substrate of a first conduction type into the one of a second conduction type is disposed on the front surface of the substrate, preventing forming of a defect compensating an impurity level which is formed in the substrate by the element during a diffusion process, and gettering impurity on the front surface of the substrate by the diffusion source. Thereby, the conduction type of the Group II-VI compound semiconductor can be controlled and the electro luminescence device having superior light emission characteristics can be stably produced.

摘要翻译： 电致发光器件包括在周期表中包含第12族（2B）元素和第16族元素（6B）元素的化合物半导体晶体基底。 通过提供具有低位错密度或低夹层密度的基材来生产; 通过将从第一导电类型的衬底转换为基片的前表面的第二导电类型的元件热元件形成pn结; 以及在基板的前后形成电极。 将包括将第一导电类型的衬底转换为第二导电类型的衬底的元件的扩散源设置在衬底的前表面上，防止形成补偿由衬底中的元件形成的杂质水平的缺陷 在扩散过程中，通过扩散源在衬底的前表面上吸杂杂质。 由此，可以控制II-VI族化合物半导体的导电类型，并且可以稳定地制造具有优异的发光特性的电致发光器件。

公开(公告)号：US5053284A

公开(公告)日：1991-10-01

申请号：US473439

申请日：1990-02-01

申请人： Akira Noda ,  Kenji Maruta

发明人： Akira Noda ,  Kenji Maruta

IPC分类号： B21B27/00 ,  B22F5/00 ,  C22C33/02 ,  C22C38/00 ,  C22C38/24

CPC分类号： C22C33/0292 ,  B21B27/00 ,  Y10T428/12056

摘要： A wear-resistant compound roll having a shell portion produced by sintering a uniform mixture of alloy powder consisting essentially, by weight, of 1.2-3.5% of C, 2% or less of Si, 2% or less of Mn, 10% or less of Cr, 3-35%, as W+2Mo, of one or two of W and Mo, 1-12% of V, and balance Fe and inevitable impurities, and 1-15%, based on the weight of said alloy powder, of VC powder dispersed therein. This compound roll is produced by (a) uniformly mixing the alloy powder with the VC powder; (b) charging the resulting mixed powder into a metal capsule disposed around a roll core; and (c) after evacuation and sealing, subjecting said mixed powder to a HIP treatment.

摘要翻译： 一种耐磨复合辊，其具有通过烧结基本上重量比为1.2-3.5％C，2％或更少的Si，2％或更少的Mn，10％或 W，Mo，Mo中的一种或两种以上的Cr为3-35％，V为1-12％，余量为Fe和不可避免的杂质，为1-15％，基于所述合金的重量 粉末，分散在其中的VC粉末。 该复合辊通过（a）将合金粉末与VC粉末均匀混合而制成; （b）将所得混合粉末装入设置在卷芯周围的金属胶囊中; 和（c）抽真空密封后，对所述混合粉末进行HIP处理。

公开(公告)号：US08710919B2

公开(公告)日：2014-04-29

申请号：US13825523

申请日：2010-09-24

申请人： Akira Noda

发明人： Akira Noda

IPC分类号： H03K5/00

CPC分类号： H03K5/00 ,  H01J49/0036 ,  H03H17/0294

摘要： For an input signal with a ringing superposed thereon, a ringing-generating filter generates an analogous ringing waveform from only a peak portion of the signal which precedes the ringing. A subtractor subtracts the analogous ringing waveform from the input signal to eliminate the ringing. The coefficient of the filter is determined by applying a calculation method similar to a polynomial division based on the complete pivoting Gaussian elimination to polynomials using a reference data expressing a peak waveform and a ringing waveform, and by using a least squares method for minimizing the square of the covariance so as to allow the presence of noise in the data. Furthermore, by a repetitive process on a plurality of the same datasets, the calculation accuracy of the coefficient is improved even under the condition that the ringing frequency is high and the number of samples in one cycle is small.

摘要翻译： 对于其上叠加有振铃的输入信号，振铃产生滤波器仅从振铃之前的信号的峰值部分产生类似的振铃波形。 减法器从输入信号中减去类似的振铃波形，以消除振铃。 滤波器的系数通过使用基于完全旋转高斯消除的多项式除法的计算方法，使用表示峰值波形和振铃波形的参考数据，并使用最小二乘法来最小化方形来确定多项式 的协方差，以便允许数据中存在噪声。 此外，通过在多个相同数据集上的重复处理，即使在振铃频率高并且一个周期中的采样数量小的条件下，也提高了系数的计算精度。

公开(公告)号：US08666681B2

公开(公告)日：2014-03-04

申请号：US12995459

申请日：2008-06-04

申请人： Akira Noda ,  Yoshikatsu Umemura

发明人： Akira Noda ,  Yoshikatsu Umemura

IPC分类号： G06F19/00

CPC分类号： H01J49/0036

摘要： The present invention aims at providing a method and apparatus for analyzing a mass spectrum on which multivalent ion peaks originating from a target compound appear, and calculating the mass of the target compound. First, each peak on the mass spectrum is analyzed to detect isotopic clusters, and the valence and the representative point (m/z value) of each isotopic cluster are obtained (S1 through S3). Since the range of the m/z value of the component which is added to or desorbed from the compound is limited, by using this factor, the isotopic clusters originating from the same compound are deduced. By combining the deduced isotopic clusters, the candidates for the m/z value of the added/desorbed component are deduced (S5). Among the plurality of selected candidates, clearly abnormal candidates are eliminated by using a plurality of conditions such as the degree of distribution of the m/z values and the similarity of the relative intensities of the representative points of the isotopic clusters (S6 through S9). The candidate having the smallest distribution of m/z values or the candidate having the highest similarity of the relative intensities of the representative points is finally selected. After the m/z value of the added/desorbed component is determined, the mass of the compound is calculated (S10 through S16).

摘要翻译： 本发明的目的在于提供一种用于分析出现来自目标化合物的多价离子峰的质谱的方法和装置，并计算目标化合物的质量。 首先分析质谱中的每个峰，以检测同位素簇，并获得每个同位素簇的价态和代表点（m / z值）（S1到S3）。 由于化合物添加或解吸的成分的m / z值的范围受到限制，因此通过使用该因子，推导出来自同一化合物的同位素簇。 通过组合推导的同位素簇，推导了加/解吸组分的m / z值的候选（S5）。 在多个选择的候选中，通过使用诸如m / z值的分布程度和同位素簇的代表点的相对强度的相似度的多个条件来消除明确的异常候选（S6至S9） 。 最终选择具有最小m / z值分布的候选者或代表点的相对强度相似度最高的候选者。 在确定加/解组分的m / z值之后，计算化合物的质量（S10至S16）。

公开(公告)号：US20130181769A1

公开(公告)日：2013-07-18

申请号：US13825523

申请日：2010-09-24

申请人： Akira Noda

发明人： Akira Noda

IPC分类号： H03K5/00

CPC分类号： H03K5/00 ,  H01J49/0036 ,  H03H17/0294

摘要： For an input signal with a ringing superposed thereon, a ringing-generating filter (12) generates an analogous ringing waveform from only a peak portion of the signal which precedes the ringing. A subtractor (11) subtracts the analogous ringing waveform from the input signal to eliminate the ringing. The coefficient of the filter (12) is determined by applying a calculation method similar to a polynomial division based on the complete pivoting Gaussian elimination to polynomials using a reference data expressing a peak waveform and a ringing waveform, and by using a least squares method for minimizing the square of the covariance so as to allow the presence of noise in the data. Furthermore, by a repetitive process on a plurality of the same datasets, the calculation accuracy of the coefficient is improved even under the condition that the ringing frequency is high and the number of samples in one cycle is small. Thus, the ringing can be correctly eliminated even if the signal frequency is high.

摘要翻译： 对于其上叠加有振铃的输入信号，振铃产生滤波器（12）仅从振铃之前的信号的峰值部分产生类似的振铃波形。 减法器（11）从输入信号中减去类似的振铃波形以消除振铃。 滤波器（12）的系数通过使用表示峰值波形和振铃波形的参考数据，使用基于完全旋转高斯消除的多项式除法的计算方法，并使用最小二乘法来确定 最小化协方差的平方，以便允许数据中存在噪声。 此外，通过在多个相同数据集上的重复处理，即使在振铃频率高并且一个周期中的采样数量小的条件下，也提高了系数的计算精度。 因此，即使信号频率高，也可以正确消除振铃。