-
1.发明申请METHOD FOR SYNTHESIZING GROUP II-VI COMPOUND SEMICONDUCTOR POLYCRYSTALS 审中-公开用于合成II-VI族化合物半导体多晶体的方法公开(公告)号：US20130029278A1
公开(公告)日：2013-01-31
申请号：US13638456
申请日：2011-03-11
申请人： Toshiaki Asahi , Akira Noda
发明人： Toshiaki Asahi , Akira Noda
CPC分类号： C22C1/02 , C30B11/002 , C30B29/48
摘要： Provided is a method for synthesizing group II-VI compound semiconductor polycrystals in which synthesis can be accomplished without the use of a quart ampoule as the polycrystal synthesis vessel, and as a result it is possible to use a larger vessel without reducing yield, and costs can thereby be reduced. Two or more starting elements are introduced to a semi-airtight pBN inner vessel (6a), the inner vessel is introduced to a semi-airtight heat-resistant outer vessel (6b) and placed in a high-pressure furnace (1) having a heating means (7), the air inside the high-pressure furnace is evacuated and the furnace is filled with an inert gas under a predetermined pressure, the outer vessel and inner vessel are heated and the temperature is raised using the heating means, the starting elements inside the inner vessel are melted and reacted, and the temperature is then gradually lowered to promote growth of polycrystals.
摘要翻译： 提供了合成可以不使用夸脱安瓿作为多晶合成容器的合成的II-VI族化合物半导体多晶体的方法，结果可以在不降低产率的情况下使用较大的容器，成本 从而可以减少。 将两个或更多个起始元件引入半气密pBN内部容器（6a）中，将内部容器引入半气密耐热外部容器（6b）并放置在具有 加热装置（7），将高压炉内的空气抽真空，在预定压力下对惰性气体进行充填，外部容器和内部容器被加热，并且使用加热装置升高温度，起动 内部容器内的元素熔化并反应，然后逐渐降低温度以促进多晶体的生长。
-
2.发明申请Heat Treatment Method of ZnTe Single Crystal Substrate and ZnTe Single Crystal Substrate 有权ZnTe单晶基板和ZnTe单晶基板的热处理方法公开(公告)号：US20090042002A1
公开(公告)日：2009-02-12
申请号：US11988755
申请日：2006-07-18
申请人： Toshiaki Asahi , Kenji Sato , Takayuki Shimizu
发明人： Toshiaki Asahi , Kenji Sato , Takayuki Shimizu
IPC分类号： B32B5/00 , H01L21/263
CPC分类号： C30B29/48 , C30B33/02 , H01L21/477
摘要： The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T1, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature T1 to a second heat treatment temperature T2 lower than the heat treatment temperature T1 with a predetermined rate, wherein the first heat treatment temperature T1 is set in a range of 700° C.≦T1≦1250° C. and the second heat treatment temperature T2 is set in a range of T2≦T1−50.
摘要翻译： 本发明提供一种用于有效地消除ZnTe单晶衬底中的Te沉积物的热处理方法，以及具有适合于使用光调制元件并具有1mm以上厚度的光学特性的ZnTe单晶衬底。 ZnTe单晶衬底的热处理方法包括：将ZnTe单晶衬底的温度提高到第一热处理温度T1并将衬底的温度保持预定时间的第一步骤; 以及以预定的速率逐渐将基板的温度从第一热处理温度T1逐渐降低到低于热处理温度T1的第二热处理温度T2的第二步骤，其中第一热处理温度T1设定在一定范围内 700℃，<= T1 <= 1250℃，第二热处理温度T2设定在T2 <= T1-50的范围内。
-
公开(公告)号：US20050118739A1
公开(公告)日：2005-06-02
申请号：US10502228
申请日：2002-12-17
申请人： Toshiaki Asahi , Kenji Sato , Atsutoshi Arakawa
发明人： Toshiaki Asahi , Kenji Sato , Atsutoshi Arakawa
摘要： A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bottom and a cylindrical shape and a second crucible disposed within the first crucible and having a communication hole communicating with the first crucible in a bottom portion thereof; melting the raw material by heating the raw material melt-containing portion; and growing a crystal by making a seed crystal contact with a surface of the raw material melt in a state covered with the encapsulating material and by pulling up the seed crystal. A heater temperature is controlled so that a diameter of a growing crystal becomes approximately equal to an inner diameter of the second crucible, and the crystal is grown by maintaining a surface of the growing crystal in a state covered with the encapsulating material until termination of crystal growth.
摘要翻译： 一种通过液体封装的Czochralski法制备化合物半导体单晶的方法，包括在具有底部和圆筒形状的第一坩埚的原料熔融物部分中包含半导体原料和封装材料，以及设置第二坩埚 在第一坩埚内并且在其底部具有与第一坩埚连通的连通孔; 通过加热原料熔融物部分来熔化原料; 并且通过在被封装材料覆盖的状态下使晶种与原料熔融物的表面接触并且拉起晶种来生长晶体。 控制加热器温度使得生长的晶体的直径变得近似等于第二坩埚的内径，并且通过将生长晶体的表面保持在被封装材料覆盖的状态直到晶体结束来生长晶体 成长。
-
4.发明申请Process for producing single crystal of compound semiconductor and crystal growing apparatus 有权制备化合物半导体的单晶和晶体生长装置的方法公开(公告)号：US20050000403A1
公开(公告)日：2005-01-06
申请号：US10497916
申请日：2003-10-03
申请人： Toshiaki Asahi , Kenji Sato , Takayuki Yabe , Atsutoshi Arakawa
发明人： Toshiaki Asahi , Kenji Sato , Takayuki Yabe , Atsutoshi Arakawa
CPC分类号： C30B27/02 , C30B15/12 , C30B29/48 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).
摘要翻译： 在使用具有双坩埚结构的晶体生长装置的LEC方法制造化合物半导体单晶的制造方法中，通过用具有贯通槽的板状构件覆盖第二坩埚而使晶体长大， 能够将具有尖端的晶种保持部的晶体提升轴引入到第二坩埚中，形成第二坩埚内的气氛几乎不变化（半密封结构）的状态。
-
公开(公告)号：US5603763A
公开(公告)日：1997-02-18
申请号：US535098
申请日：1995-10-18
CPC分类号： C30B29/40 , C30B11/00 , C30B11/003 , C30B29/48
摘要： A single crystal growing method for producing a high-quality and large-diameter single crystal of a compound semiconductor with a good yield, is disclosed.A volatile element 2 is first put into a reservoir portion 1A of a quartz ampule 1. Further, a crucible 4 made of pBN, which contains a raw material 3A of a compound semiconductor, is placed in the quartz ampule 1, the vacuum sealing of which is then performed. While a vapor pressure controlling operation is performed, a furnace temperature distribution is controlled in such a manner that a vertical first temperature gradient .alpha. .degree. C./cm) in the vicinity of an outside wall of the quartz ampule corresponding to a raw melt 3B is smaller than a vertical second temperature gradient (.beta. .degree. C./cm) in a range above the top end of the crucible 4 and simultaneously, the temperature is gradually lowered. Furthermore, .alpha. ranges from 51/D.sup.2 to 102/D.sup.2 .degree. C./cm, and preferably ranges from 58/D.sup.2 to 83/D.sup.2 .degree. C./cm (incidentally, the diameter of the single crystal is D cm). Additionally, .beta. ranges from 1.06.times. to 1.72.times..degree. C./cm, more preferably, ranges from 1.19X to 1.46X .degree. C./cm ( incidentally, X is given by the following equation: X=.sqroot. R.rho./.lambda.nL), where the cooling rate of the furnace temperature and the coefficients of thermal conductivity, the specific gravity, the latent heat of melting and the formula weight of the crystal are assumed to be R .degree. C./hr, .lambda. kcal/cm.multidot.hr.multidot.K, .rho.g/cm.sup.3, L kcal/mol and n g/mol, respectively).
摘要翻译： PCT No.PCT / JP94 / 02089 Sec。 371 1995年10月18日第 102（e）日期1995年10月18日PCT 1994年12月14日PCT PCT。 WO95 / 22643 PCT出版物 日期：1995年8月24日公开了一种以高产率生产化合物半导体的高品质大直径单晶的单晶生长方法。 首先将挥发性元素2放入石英安瓿1的储存部分1A中。此外，将由pBN制成的含有化合物半导体的原料3A的坩埚4放置在石英安瓿1中，真空密封 然后执行。 在执行蒸汽压力控制操作的同时，控制炉温分布，使得对应于原料熔融物3B的石英安瓿的外壁附近的垂直第一温度梯度α℃/ cm 3为 小于在坩埚4的顶端上方范围内的垂直第二温度梯度（β℃/ cm），同时温度逐渐降低。 此外，α的范围为51 / D2〜102 / D2℃/ cm，优选为58 / D2〜83 / D2℃/ cm（顺便提及，单晶的直径为Dcm）。 另外，β范围为1.06×1.72×C / cm，更优选为1.19X〜1.46XC / cm（附带地，X由下式给出：X = 2ROOT + E，rad R rho /λnL）+ EE，其中炉温的冷却速率和导热系数，比重，熔融潜热和晶体的配方重量被假定为R℃C.hr。 分别为λkcal / cm×hr×K，rho g / cm 3，L kcal / mol和ng / mol）。
-
公开(公告)号：US07521282B2
公开(公告)日：2009-04-21
申请号：US11984942
申请日：2007-11-26
IPC分类号： H01L21/00
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
-
公开(公告)号：US20080090386A1
公开(公告)日：2008-04-17
申请号：US11984943
申请日：2007-11-26
IPC分类号： H01L21/20
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
-
公开(公告)号：US06334897B1
公开(公告)日：2002-01-01
申请号：US09424794
申请日：1999-11-30
申请人： Toshiaki Asahi , Keiji Kainosho , Tatsuya Nozaki , Kenji Sato
发明人： Toshiaki Asahi , Keiji Kainosho , Tatsuya Nozaki , Kenji Sato
IPC分类号： C30B1314
CPC分类号： C30B29/46 , C30B11/00 , C30B11/002 , C30B11/003 , C30B29/40 , C30B29/48
摘要： A method for producing a compound semiconductor single crystal, comprises the steps of: using a crucible having a bottom, a cylindrical shape, a diameter increasing portion having a reversed conical shape in a lower end side of the crucible, and a set portion for a seed crystal in a center of the bottom of the diameter increasing portion; setting a seed crystal in the seed crystal set portion of the crucible; putting a raw material of the compound semiconductor and an encapsulating material into the crucible; enclosing the crucible in an inner container; thereafter setting the inner container in a vertical type furnace; heating the raw material and the encapsulating material by a heating means to melt; and solidifying the obtained raw material melt from the seed crystal toward an upper side with annealing the raw material melt from a lower side to grow a single crystal of the compound semiconductor; wherein a rate of crystal growth at the diameter increasing portion of the crucible is made not less than 20 mm/hr during the crystal is grown.
摘要翻译： 一种制备化合物半导体单晶的方法，包括以下步骤：使用具有底部，圆筒形状的坩埚，在坩埚的下端侧具有倒锥形的直径增加部分，以及用于 种子晶体在直径增加部分的底部的中心; 将晶种设置在坩埚的晶种组合部分中; 将化合物半导体的原料和封装材料放入坩埚中; 将坩埚封闭在内部容器中; 然后将内容器设置在立式炉中; 通过加热装置加热原料和包封材料以熔化; 并且通过从下侧退火原料熔体而将获得的原料熔体从晶种固化到上侧，以生长化合物半导体的单晶; 其中在晶体生长期间，在坩埚的直径增加部分处的晶体生长速率不小于20mm / hr。
-
公开(公告)号：US20080090328A1
公开(公告)日：2008-04-17
申请号：US11984942
申请日：2007-11-26
IPC分类号： H01L21/10
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
-
公开(公告)号：US07175705B2
公开(公告)日：2007-02-13
申请号：US09753662
申请日：2001-01-04
申请人： Shigeto Fujimura , Toshiaki Asahi , Kenji Sato
发明人： Shigeto Fujimura , Toshiaki Asahi , Kenji Sato
摘要： A process for producing compound semiconductor single crystal, comprises the steps of: putting a compound semiconductor raw material into a crucible, setting the crucible in a vertical type of heating furnace to heat and melt the raw material by a heater, promoting a nucleation on a surface of a raw material melt by leaving a solid raw material in a part of the raw material melt, solidifying the raw material melt gradually from the surface of the raw material melt without a seed crystal, and growing a crystal by using a nucleus generated by the nucleation.
摘要翻译： 一种制备化合物半导体单晶的方法，包括以下步骤：将化合物半导体原料放入坩埚中，将坩埚置于立式加热炉中，通过加热器加热熔化原料，促进成核 通过在原料熔体的一部分中留下固体原料而熔化原料的表面，使原料熔融物从原料熔融物的表面逐渐固化而不用晶种，并且通过使用由 成核。
-
-
-
-
-
-
-
-
-
搜索结果
22 条记录 (耗时 0.027 秒)
